Patent
US 9,048,169FORMATION OF SUBSTANTIALLY PIT FREE INDIUM GALLIUM NITRIDE
Chantal Arena
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 9,048,169Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b), which can be used to form one or more pseudo-substrates 116 (FIG. l d). Pseudo-substrate 116 is used as a composite substrate to form a device layer …
FIG. 2 is a perspective view of pseudo-substrate 116, in accordance with the invention, as shown in FIG. l e. In this embodiment, bonding substrate 113 is a …
FIG. 3d. In this example, device layer structure 117 includes a layer of N-polar indium gallium nitride positioned adjacent to nitrogen polar surface 108. …
FIG. 4a is a flow diagram of a method 150, in accordance with the invention, of fabricating a device layer structure. In this embodiment, method 150 includes a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Serial No. 12/935,857 IN THE CLAIMS: Claims 1-6 and 17-20 were previously canceled. None of the claims are amended herein.
canceled
canceled
canceled
canceled
canceled
A method of fabricating a device layer structure, comprising: providing a gallium nitride semiconductor layer carried by a growth substrate, wherein the gallium nitride semiconductor layer has a gallium polar surface and a nitrogen polar surface closer to the growth substrate than the gallium polar surface; bonding the gallium nitride semiconductor layer to a first bonding substrate, wherein the gallium nitride semiconductor layer has the gallium polar surface closer to the first bonding substrate than the nitrogen polar surface; removing the growth substrate such that the gallium nitride semiconductor layer is carried by the first bonding substrate; and growing at least a portion of a device layer structure comprising an indium gallium nitride material on the nitrogen polar surface of the gallium nitride semiconductor layer after removing the growth substrate such that the indium gallium nitride material is a nitrogen polar grown InGaN material, the indium gallium nitride material including a nitrogen polar exposed surface on a side thereof opposite the gallium nitride semiconductor layer; wherein the nitrogen polar grown InGaN material includes a light-emitting region, the device layer structure comprising a single layer of the indium gallium nitride material grown pseudomorphically below a critical thickness of the single layer of the indium gallium nitride material on the gallium nitride semiconductor layer.
The method of claim 7, further comprising defining the light-emitting region of the device indium.
Serial No. 12/935,857
The method of claim 14, further including reduce the defect density.
17-20 16 canceled
canceled
canceled
canceled polar surface. using at least one of wet and mechanical etching to forming the indium gallium nitride material layer structure to comprise about 20% or more
Layer stacks claimed or described, ordered top of device to substrate.
light-emitting device layer structure
Materials described outside the worked examples.
gallium nitride semiconductor layer
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,048,169Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b), which can be used to form one or more pseudo-substrates 116 (FIG. l d). Pseudo-substrate 116 is used as a composite substrate to form a device layer …
FIG. 2 is a perspective view of pseudo-substrate 116, in accordance with the invention, as shown in FIG. l e. In this embodiment, bonding substrate 113 is a …
FIG. 3d. In this example, device layer structure 117 includes a layer of N-polar indium gallium nitride positioned adjacent to nitrogen polar surface 108. …
FIG. 4a is a flow diagram of a method 150, in accordance with the invention, of fabricating a device layer structure. In this embodiment, method 150 includes a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Serial No. 12/935,857 IN THE CLAIMS: Claims 1-6 and 17-20 were previously canceled. None of the claims are amended herein.
canceled
canceled
canceled
canceled
canceled
A method of fabricating a device layer structure, comprising: providing a gallium nitride semiconductor layer carried by a growth substrate, wherein the gallium nitride semiconductor layer has a gallium polar surface and a nitrogen polar surface closer to the growth substrate than the gallium polar surface; bonding the gallium nitride semiconductor layer to a first bonding substrate, wherein the gallium nitride semiconductor layer has the gallium polar surface closer to the first bonding substrate than the nitrogen polar surface; removing the growth substrate such that the gallium nitride semiconductor layer is carried by the first bonding substrate; and growing at least a portion of a device layer structure comprising an indium gallium nitride material on the nitrogen polar surface of the gallium nitride semiconductor layer after removing the growth substrate such that the indium gallium nitride material is a nitrogen polar grown InGaN material, the indium gallium nitride material including a nitrogen polar exposed surface on a side thereof opposite the gallium nitride semiconductor layer; wherein the nitrogen polar grown InGaN material includes a light-emitting region, the device layer structure comprising a single layer of the indium gallium nitride material grown pseudomorphically below a critical thickness of the single layer of the indium gallium nitride material on the gallium nitride semiconductor layer.
The method of claim 7, further comprising defining the light-emitting region of the device indium.
Serial No. 12/935,857
The method of claim 14, further including reduce the defect density.
17-20 16 canceled
canceled
canceled
canceled polar surface. using at least one of wet and mechanical etching to forming the indium gallium nitride material layer structure to comprise about 20% or more
Layer stacks claimed or described, ordered top of device to substrate.
light-emitting device layer structure
Materials described outside the worked examples.
gallium nitride semiconductor layer
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,048,169Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b), which can be used to form one or more pseudo-substrates 116 (FIG. l d). Pseudo-substrate 116 is used as a composite substrate to form a device layer …
FIG. 2 is a perspective view of pseudo-substrate 116, in accordance with the invention, as shown in FIG. l e. In this embodiment, bonding substrate 113 is a …
FIG. 3d. In this example, device layer structure 117 includes a layer of N-polar indium gallium nitride positioned adjacent to nitrogen polar surface 108. …
FIG. 4a is a flow diagram of a method 150, in accordance with the invention, of fabricating a device layer structure. In this embodiment, method 150 includes a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Serial No. 12/935,857 IN THE CLAIMS: Claims 1-6 and 17-20 were previously canceled. None of the claims are amended herein.
canceled
canceled
canceled
canceled
canceled
A method of fabricating a device layer structure, comprising: providing a gallium nitride semiconductor layer carried by a growth substrate, wherein the gallium nitride semiconductor layer has a gallium polar surface and a nitrogen polar surface closer to the growth substrate than the gallium polar surface; bonding the gallium nitride semiconductor layer to a first bonding substrate, wherein the gallium nitride semiconductor layer has the gallium polar surface closer to the first bonding substrate than the nitrogen polar surface; removing the growth substrate such that the gallium nitride semiconductor layer is carried by the first bonding substrate; and growing at least a portion of a device layer structure comprising an indium gallium nitride material on the nitrogen polar surface of the gallium nitride semiconductor layer after removing the growth substrate such that the indium gallium nitride material is a nitrogen polar grown InGaN material, the indium gallium nitride material including a nitrogen polar exposed surface on a side thereof opposite the gallium nitride semiconductor layer; wherein the nitrogen polar grown InGaN material includes a light-emitting region, the device layer structure comprising a single layer of the indium gallium nitride material grown pseudomorphically below a critical thickness of the single layer of the indium gallium nitride material on the gallium nitride semiconductor layer.
The method of claim 7, further comprising defining the light-emitting region of the device indium.
Serial No. 12/935,857
The method of claim 14, further including reduce the defect density.
17-20 16 canceled
canceled
canceled
canceled polar surface. using at least one of wet and mechanical etching to forming the indium gallium nitride material layer structure to comprise about 20% or more
Layer stacks claimed or described, ordered top of device to substrate.
light-emitting device layer structure
Materials described outside the worked examples.
gallium nitride semiconductor layer
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,048,169Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b), which can be used to form one or more pseudo-substrates 116 (FIG. l d). Pseudo-substrate 116 is used as a composite substrate to form a device layer …
FIG. 2 is a perspective view of pseudo-substrate 116, in accordance with the invention, as shown in FIG. l e. In this embodiment, bonding substrate 113 is a …
FIG. 3d. In this example, device layer structure 117 includes a layer of N-polar indium gallium nitride positioned adjacent to nitrogen polar surface 108. …
FIG. 4a is a flow diagram of a method 150, in accordance with the invention, of fabricating a device layer structure. In this embodiment, method 150 includes a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Serial No. 12/935,857 IN THE CLAIMS: Claims 1-6 and 17-20 were previously canceled. None of the claims are amended herein.
canceled
canceled
canceled
canceled
canceled
A method of fabricating a device layer structure, comprising: providing a gallium nitride semiconductor layer carried by a growth substrate, wherein the gallium nitride semiconductor layer has a gallium polar surface and a nitrogen polar surface closer to the growth substrate than the gallium polar surface; bonding the gallium nitride semiconductor layer to a first bonding substrate, wherein the gallium nitride semiconductor layer has the gallium polar surface closer to the first bonding substrate than the nitrogen polar surface; removing the growth substrate such that the gallium nitride semiconductor layer is carried by the first bonding substrate; and growing at least a portion of a device layer structure comprising an indium gallium nitride material on the nitrogen polar surface of the gallium nitride semiconductor layer after removing the growth substrate such that the indium gallium nitride material is a nitrogen polar grown InGaN material, the indium gallium nitride material including a nitrogen polar exposed surface on a side thereof opposite the gallium nitride semiconductor layer; wherein the nitrogen polar grown InGaN material includes a light-emitting region, the device layer structure comprising a single layer of the indium gallium nitride material grown pseudomorphically below a critical thickness of the single layer of the indium gallium nitride material on the gallium nitride semiconductor layer.
The method of claim 7, further comprising defining the light-emitting region of the device indium.
Serial No. 12/935,857
The method of claim 14, further including reduce the defect density.
17-20 16 canceled
canceled
canceled
canceled polar surface. using at least one of wet and mechanical etching to forming the indium gallium nitride material layer structure to comprise about 20% or more
Layer stacks claimed or described, ordered top of device to substrate.
light-emitting device layer structure
Materials described outside the worked examples.
gallium nitride semiconductor layer
GaN
indium gallium nitride
InGaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
III-nitride semiconductor layer
III-nitride semiconductor layer
III-nitride semiconductor layer
III-nitride semiconductor layer