Patent
US 9,853,182Gallium Nitride-Based Light Emitting Diode
Seung Kyu CHOI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,853,182Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the p type contact layer 43 may be made of Mg-doped GaN. The p type contact layer 43 is SVG …
FIG. 2, the super- lattice layer 20 may have a structure in which a t ri -layer structure of InGaN layer 21/AlGaN layer 22/GaN layer 23 is SVG …
FIG. 3, a GaN layer 24 may be inserted between the InGaN layer 21 and the AlGaN layer 22. The GaN layer 24 may be formed as an undoped layer or a Si-doped …
FIG. 4.
FIG. 5 is a view showing an energy band for explaining the active layer of
FIG. 6, (a) is a surface photograph of an n type GaN layer grown from the gallium nitride substrate 11 without the middle temperature buffer layer 13, and (b) …
FIG. 7 is an optical photograph for explaining a surface morphology of an epitaxial layer according to the use of an intermediate layer. SVG …
FIG. 8 is a graph for explaining an increase in optical power according to the use of a gallium nitride substrate. Here, in an embodiment of the present …
FIG. 9 is a graph for explaining a change in optical power and a forward voltage according to a composition ratio of Al in a barrier layer. Here, the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting diode (LED) comprising: a gallium nitride substrate having a growth plane of an m plane; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer disposed at an upper portion of the first contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer; a middle temperature buffer layer positioned between the substrate and the gallium nitride-based first contact layer, a lower GaN la y er positioned between the substrate and the gallium nitride-based first contact la y er; and an intermediate la y er positioned between the gallium nitride-based first contact la ver and the lower GaN la yer. wherein the intermediate la y er is an AlGaN la yer, wherein the middle temperature buffer layer is grown from the gallium nitride substrate at a growth temperature ranging from 700 C to 800 C, and wherein the gallium nitride substrate and the middle temperature buffer layer are formed of the same material. Currently amended
The light emitting diode of claim 1, wherein the super-lattice layer having a multilayer structure has a structure in which an InGaN layer, an AlGaN layer, and a GaN layer are repeatedly stacked in a plurality of cycles. Original
The lig h t emitting diode of claim 1, wherein the active layer having a multi-quantum well structure includes (n- 1) number of barrier layers disposed between a first well layer closest to the first n type contact layer and nth well layer closest to the second p type contact layer, and among the (n- 1) number of barrier layers, barrier layers having a thickness greater than an average thickness of the (n- i) number of barrier layers are disposed to be closer to the first well layer and barrier layers having a thickness smaller than the average thickness of the (n- i) barrier layers are disposed to be closer to the nth well layer. Original
light emitting diode of claim 1, wherein the barrier layers in the active layer are made of AlGaN or A l InGaN. Original
The light emitting diode of claim 1, wherein the middle temperature buffer layer has a thickness ranging from 2 nm to 10 nm. Previously presented
Canceled
Claims 12-14: Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
m-plane GaN-based LED with super-lattice and MQW active layer
Materials described outside the worked examples.
gallium nitride substrate
GaN
intermediate layer (AlGaN)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–10 nm | — |
Temperature | 700–800 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,853,182Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the p type contact layer 43 may be made of Mg-doped GaN. The p type contact layer 43 is SVG …
FIG. 2, the super- lattice layer 20 may have a structure in which a t ri -layer structure of InGaN layer 21/AlGaN layer 22/GaN layer 23 is SVG …
FIG. 3, a GaN layer 24 may be inserted between the InGaN layer 21 and the AlGaN layer 22. The GaN layer 24 may be formed as an undoped layer or a Si-doped …
FIG. 4.
FIG. 5 is a view showing an energy band for explaining the active layer of
FIG. 6, (a) is a surface photograph of an n type GaN layer grown from the gallium nitride substrate 11 without the middle temperature buffer layer 13, and (b) …
FIG. 7 is an optical photograph for explaining a surface morphology of an epitaxial layer according to the use of an intermediate layer. SVG …
FIG. 8 is a graph for explaining an increase in optical power according to the use of a gallium nitride substrate. Here, in an embodiment of the present …
FIG. 9 is a graph for explaining a change in optical power and a forward voltage according to a composition ratio of Al in a barrier layer. Here, the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting diode (LED) comprising: a gallium nitride substrate having a growth plane of an m plane; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer disposed at an upper portion of the first contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer; a middle temperature buffer layer positioned between the substrate and the gallium nitride-based first contact layer, a lower GaN la y er positioned between the substrate and the gallium nitride-based first contact la y er; and an intermediate la y er positioned between the gallium nitride-based first contact la ver and the lower GaN la yer. wherein the intermediate la y er is an AlGaN la yer, wherein the middle temperature buffer layer is grown from the gallium nitride substrate at a growth temperature ranging from 700 C to 800 C, and wherein the gallium nitride substrate and the middle temperature buffer layer are formed of the same material. Currently amended
The light emitting diode of claim 1, wherein the super-lattice layer having a multilayer structure has a structure in which an InGaN layer, an AlGaN layer, and a GaN layer are repeatedly stacked in a plurality of cycles. Original
The lig h t emitting diode of claim 1, wherein the active layer having a multi-quantum well structure includes (n- 1) number of barrier layers disposed between a first well layer closest to the first n type contact layer and nth well layer closest to the second p type contact layer, and among the (n- 1) number of barrier layers, barrier layers having a thickness greater than an average thickness of the (n- i) number of barrier layers are disposed to be closer to the first well layer and barrier layers having a thickness smaller than the average thickness of the (n- i) barrier layers are disposed to be closer to the nth well layer. Original
light emitting diode of claim 1, wherein the barrier layers in the active layer are made of AlGaN or A l InGaN. Original
The light emitting diode of claim 1, wherein the middle temperature buffer layer has a thickness ranging from 2 nm to 10 nm. Previously presented
Canceled
Claims 12-14: Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
m-plane GaN-based LED with super-lattice and MQW active layer
Materials described outside the worked examples.
gallium nitride substrate
GaN
intermediate layer (AlGaN)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–10 nm | — |
Temperature | 700–800 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,853,182Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the p type contact layer 43 may be made of Mg-doped GaN. The p type contact layer 43 is SVG …
FIG. 2, the super- lattice layer 20 may have a structure in which a t ri -layer structure of InGaN layer 21/AlGaN layer 22/GaN layer 23 is SVG …
FIG. 3, a GaN layer 24 may be inserted between the InGaN layer 21 and the AlGaN layer 22. The GaN layer 24 may be formed as an undoped layer or a Si-doped …
FIG. 4.
FIG. 5 is a view showing an energy band for explaining the active layer of
FIG. 6, (a) is a surface photograph of an n type GaN layer grown from the gallium nitride substrate 11 without the middle temperature buffer layer 13, and (b) …
FIG. 7 is an optical photograph for explaining a surface morphology of an epitaxial layer according to the use of an intermediate layer. SVG …
FIG. 8 is a graph for explaining an increase in optical power according to the use of a gallium nitride substrate. Here, in an embodiment of the present …
FIG. 9 is a graph for explaining a change in optical power and a forward voltage according to a composition ratio of Al in a barrier layer. Here, the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting diode (LED) comprising: a gallium nitride substrate having a growth plane of an m plane; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer disposed at an upper portion of the first contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer; a middle temperature buffer layer positioned between the substrate and the gallium nitride-based first contact layer, a lower GaN la y er positioned between the substrate and the gallium nitride-based first contact la y er; and an intermediate la y er positioned between the gallium nitride-based first contact la ver and the lower GaN la yer. wherein the intermediate la y er is an AlGaN la yer, wherein the middle temperature buffer layer is grown from the gallium nitride substrate at a growth temperature ranging from 700 C to 800 C, and wherein the gallium nitride substrate and the middle temperature buffer layer are formed of the same material. Currently amended
The light emitting diode of claim 1, wherein the super-lattice layer having a multilayer structure has a structure in which an InGaN layer, an AlGaN layer, and a GaN layer are repeatedly stacked in a plurality of cycles. Original
The lig h t emitting diode of claim 1, wherein the active layer having a multi-quantum well structure includes (n- 1) number of barrier layers disposed between a first well layer closest to the first n type contact layer and nth well layer closest to the second p type contact layer, and among the (n- 1) number of barrier layers, barrier layers having a thickness greater than an average thickness of the (n- i) number of barrier layers are disposed to be closer to the first well layer and barrier layers having a thickness smaller than the average thickness of the (n- i) barrier layers are disposed to be closer to the nth well layer. Original
light emitting diode of claim 1, wherein the barrier layers in the active layer are made of AlGaN or A l InGaN. Original
The light emitting diode of claim 1, wherein the middle temperature buffer layer has a thickness ranging from 2 nm to 10 nm. Previously presented
Canceled
Claims 12-14: Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
m-plane GaN-based LED with super-lattice and MQW active layer
Materials described outside the worked examples.
gallium nitride substrate
GaN
intermediate layer (AlGaN)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–10 nm | — |
Temperature | 700–800 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,853,182Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the p type contact layer 43 may be made of Mg-doped GaN. The p type contact layer 43 is SVG …
FIG. 2, the super- lattice layer 20 may have a structure in which a t ri -layer structure of InGaN layer 21/AlGaN layer 22/GaN layer 23 is SVG …
FIG. 3, a GaN layer 24 may be inserted between the InGaN layer 21 and the AlGaN layer 22. The GaN layer 24 may be formed as an undoped layer or a Si-doped …
FIG. 4.
FIG. 5 is a view showing an energy band for explaining the active layer of
FIG. 6, (a) is a surface photograph of an n type GaN layer grown from the gallium nitride substrate 11 without the middle temperature buffer layer 13, and (b) …
FIG. 7 is an optical photograph for explaining a surface morphology of an epitaxial layer according to the use of an intermediate layer. SVG …
FIG. 8 is a graph for explaining an increase in optical power according to the use of a gallium nitride substrate. Here, in an embodiment of the present …
FIG. 9 is a graph for explaining a change in optical power and a forward voltage according to a composition ratio of Al in a barrier layer. Here, the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting diode (LED) comprising: a gallium nitride substrate having a growth plane of an m plane; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer disposed at an upper portion of the first contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer; a middle temperature buffer layer positioned between the substrate and the gallium nitride-based first contact layer, a lower GaN la y er positioned between the substrate and the gallium nitride-based first contact la y er; and an intermediate la y er positioned between the gallium nitride-based first contact la ver and the lower GaN la yer. wherein the intermediate la y er is an AlGaN la yer, wherein the middle temperature buffer layer is grown from the gallium nitride substrate at a growth temperature ranging from 700 C to 800 C, and wherein the gallium nitride substrate and the middle temperature buffer layer are formed of the same material. Currently amended
The light emitting diode of claim 1, wherein the super-lattice layer having a multilayer structure has a structure in which an InGaN layer, an AlGaN layer, and a GaN layer are repeatedly stacked in a plurality of cycles. Original
The lig h t emitting diode of claim 1, wherein the active layer having a multi-quantum well structure includes (n- 1) number of barrier layers disposed between a first well layer closest to the first n type contact layer and nth well layer closest to the second p type contact layer, and among the (n- 1) number of barrier layers, barrier layers having a thickness greater than an average thickness of the (n- i) number of barrier layers are disposed to be closer to the first well layer and barrier layers having a thickness smaller than the average thickness of the (n- i) barrier layers are disposed to be closer to the nth well layer. Original
light emitting diode of claim 1, wherein the barrier layers in the active layer are made of AlGaN or A l InGaN. Original
The light emitting diode of claim 1, wherein the middle temperature buffer layer has a thickness ranging from 2 nm to 10 nm. Previously presented
Canceled
Claims 12-14: Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
m-plane GaN-based LED with super-lattice and MQW active layer
Materials described outside the worked examples.
gallium nitride substrate
GaN
intermediate layer (AlGaN)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–10 nm | — |
Temperature | 700–800 °C |
Related documents with shared materials, methods, properties, or citations.
InGaN layer (super-lattice)
InGaN
AlInGaN barrier layer
AlInGaN
| — |
InGaN layer (super-lattice)
InGaN
AlInGaN barrier layer
AlInGaN
| — |
InGaN layer (super-lattice)
InGaN
AlInGaN barrier layer
AlInGaN
| — |
InGaN layer (super-lattice)
InGaN
AlInGaN barrier layer
AlInGaN
| — |