Patent
US 9,018,027METHOD OF FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE
Tae Hyuk IM
US
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Patent
Atlas literature
Patent
US 9,018,027Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride (GaN)-based semiconductor device, the method comprising: growing GaN-based semiconductor layers on an upper surface of a GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; scannin g transmitting- a laser across treugh- a lower surface of the GaN substrate the laser emittin g a laser beam that is focused at focusin g positions, such that the focusin g p ositions 4e form a laser absorption region inside a structure comprising the GaN substrate and the semiconductor stack; and separating the GaN substrate from the semiconductor stack to form the GaN semiconductor device.
The method of claim 1, wherein the laser absorption region is formed inside the GaN substrate, at an interface between the GaN substrate and the semiconductor stack, or inside the semiconductor stack.
The method of claim 1, wherein the laser absorption region has a 2 SVG 13950958.09-30-2014.I₀PPSBMCPXXIFW3.CLM30002165.1.1489.157.2249.292.svg 0.45 2.533 Graph Black and white generally planar shape.
The method of claim 1, wherein: the laser has an infrared wavelength; and the laser beam comprises a pulsed laser beam, each of the beam pulses bein g focused at one of the focusin g positions. isfocused inside the structure cmrisghe GaN substate and the semicnductor sck.
The method of claim 1, wherein the laser comprises a femtosecond or picosecond pulse laser.
The method of claim 1, wherein the semiconductor stack comprises a GaN layer that contacts the GaN substrate.
The method of claim 1, further comprising: forming a sacrificial layer between the GaN substrate and the semiconductor stack, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate.
The method of claim 1, further comprising polishing a surface of the GaN substrate separated from the semiconductor stack.
The method of claim 1, ofeGaim-1-- further comprising reusing the polished GaN substrate as a growth substrate.
The method of claim 1, wherein the semiconductor stack comprises: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; and an active layer disposed between the first and second conductivity-type semiconductor layers, wherein the GaN-based semiconductor device comprises a light emitting diode.
The method of claim 1, wherein the semiconductor stack has a dislocation density of about 5 x 106/cm2or less.
The method of claim 1, wherein the growing of the GaN-based semiconductor layers comprises using metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). 4 SVG 13950958.09-30-2014.I₀PPSBMCPXXIFW3.CLM30002167.1.1489.157.2249.292.svg 0.45 2.533 Chemistry Black and white
The method of claim 1, wherein the laser absorption region is formed at an interface between the substrate and the semiconductor stack. 5 Application No.: 13/950,958 Reply dated Response to Office Action of
A method of fabricating a gallium nitride (GaN)-based semiconductor device, the method comprising: growing GaN-based semiconductor layers on an upper surface of a GaN substrate to form a semiconductor stack; forming a sacrificial layer between the GaN substrate and the semiconductor stack; forming a support substrate on the semiconductor stack; scannin g transmitting- a laser across treugh- a lower surface of the GaN substrate the laser emittin g a laser beam that is focused a focusin g positions, such that the focusin g positions to- form a laser absorption region inside the sacrificial layer; a structure comprising the Gan substrate and the semicnductor ck; and separating the GaN substrate from the semiconductor stack to form the GaN semiconductor device, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate.
The method of claim 16, wherein the energy of the laser is lower than the bandgap of the GaN substrate and higher than the bandgap of the sacrificial layer.
The method of claim 16, wherein the laser absorption region is formed at an interface between the substrate and the semiconductor stack. 6
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device
vertical structure light emitting diode
Materials described outside the worked examples.
gallium nitride substrate
GaN
GaN-based semiconductor layers
sacrificial layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dislocation Density | ≤ 5000000 /cm2 | GaN-based semiconductor layers |
Dislocation Density | 100000000 /cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,018,027Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride (GaN)-based semiconductor device, the method comprising: growing GaN-based semiconductor layers on an upper surface of a GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; scannin g transmitting- a laser across treugh- a lower surface of the GaN substrate the laser emittin g a laser beam that is focused at focusin g positions, such that the focusin g p ositions 4e form a laser absorption region inside a structure comprising the GaN substrate and the semiconductor stack; and separating the GaN substrate from the semiconductor stack to form the GaN semiconductor device.
The method of claim 1, wherein the laser absorption region is formed inside the GaN substrate, at an interface between the GaN substrate and the semiconductor stack, or inside the semiconductor stack.
The method of claim 1, wherein the laser absorption region has a 2 SVG 13950958.09-30-2014.I₀PPSBMCPXXIFW3.CLM30002165.1.1489.157.2249.292.svg 0.45 2.533 Graph Black and white generally planar shape.
The method of claim 1, wherein: the laser has an infrared wavelength; and the laser beam comprises a pulsed laser beam, each of the beam pulses bein g focused at one of the focusin g positions. isfocused inside the structure cmrisghe GaN substate and the semicnductor sck.
The method of claim 1, wherein the laser comprises a femtosecond or picosecond pulse laser.
The method of claim 1, wherein the semiconductor stack comprises a GaN layer that contacts the GaN substrate.
The method of claim 1, further comprising: forming a sacrificial layer between the GaN substrate and the semiconductor stack, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate.
The method of claim 1, further comprising polishing a surface of the GaN substrate separated from the semiconductor stack.
The method of claim 1, ofeGaim-1-- further comprising reusing the polished GaN substrate as a growth substrate.
The method of claim 1, wherein the semiconductor stack comprises: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; and an active layer disposed between the first and second conductivity-type semiconductor layers, wherein the GaN-based semiconductor device comprises a light emitting diode.
The method of claim 1, wherein the semiconductor stack has a dislocation density of about 5 x 106/cm2or less.
The method of claim 1, wherein the growing of the GaN-based semiconductor layers comprises using metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). 4 SVG 13950958.09-30-2014.I₀PPSBMCPXXIFW3.CLM30002167.1.1489.157.2249.292.svg 0.45 2.533 Chemistry Black and white
The method of claim 1, wherein the laser absorption region is formed at an interface between the substrate and the semiconductor stack. 5 Application No.: 13/950,958 Reply dated Response to Office Action of
A method of fabricating a gallium nitride (GaN)-based semiconductor device, the method comprising: growing GaN-based semiconductor layers on an upper surface of a GaN substrate to form a semiconductor stack; forming a sacrificial layer between the GaN substrate and the semiconductor stack; forming a support substrate on the semiconductor stack; scannin g transmitting- a laser across treugh- a lower surface of the GaN substrate the laser emittin g a laser beam that is focused a focusin g positions, such that the focusin g positions to- form a laser absorption region inside the sacrificial layer; a structure comprising the Gan substrate and the semicnductor ck; and separating the GaN substrate from the semiconductor stack to form the GaN semiconductor device, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate.
The method of claim 16, wherein the energy of the laser is lower than the bandgap of the GaN substrate and higher than the bandgap of the sacrificial layer.
The method of claim 16, wherein the laser absorption region is formed at an interface between the substrate and the semiconductor stack. 6
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device
vertical structure light emitting diode
Materials described outside the worked examples.
gallium nitride substrate
GaN
GaN-based semiconductor layers
sacrificial layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dislocation Density | ≤ 5000000 /cm2 | GaN-based semiconductor layers |
Dislocation Density | 100000000 /cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,018,027Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride (GaN)-based semiconductor device, the method comprising: growing GaN-based semiconductor layers on an upper surface of a GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; scannin g transmitting- a laser across treugh- a lower surface of the GaN substrate the laser emittin g a laser beam that is focused at focusin g positions, such that the focusin g p ositions 4e form a laser absorption region inside a structure comprising the GaN substrate and the semiconductor stack; and separating the GaN substrate from the semiconductor stack to form the GaN semiconductor device.
The method of claim 1, wherein the laser absorption region is formed inside the GaN substrate, at an interface between the GaN substrate and the semiconductor stack, or inside the semiconductor stack.
The method of claim 1, wherein the laser absorption region has a 2 SVG 13950958.09-30-2014.I₀PPSBMCPXXIFW3.CLM30002165.1.1489.157.2249.292.svg 0.45 2.533 Graph Black and white generally planar shape.
The method of claim 1, wherein: the laser has an infrared wavelength; and the laser beam comprises a pulsed laser beam, each of the beam pulses bein g focused at one of the focusin g positions. isfocused inside the structure cmrisghe GaN substate and the semicnductor sck.
The method of claim 1, wherein the laser comprises a femtosecond or picosecond pulse laser.
The method of claim 1, wherein the semiconductor stack comprises a GaN layer that contacts the GaN substrate.
The method of claim 1, further comprising: forming a sacrificial layer between the GaN substrate and the semiconductor stack, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate.
The method of claim 1, further comprising polishing a surface of the GaN substrate separated from the semiconductor stack.
The method of claim 1, ofeGaim-1-- further comprising reusing the polished GaN substrate as a growth substrate.
The method of claim 1, wherein the semiconductor stack comprises: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; and an active layer disposed between the first and second conductivity-type semiconductor layers, wherein the GaN-based semiconductor device comprises a light emitting diode.
The method of claim 1, wherein the semiconductor stack has a dislocation density of about 5 x 106/cm2or less.
The method of claim 1, wherein the growing of the GaN-based semiconductor layers comprises using metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). 4 SVG 13950958.09-30-2014.I₀PPSBMCPXXIFW3.CLM30002167.1.1489.157.2249.292.svg 0.45 2.533 Chemistry Black and white
The method of claim 1, wherein the laser absorption region is formed at an interface between the substrate and the semiconductor stack. 5 Application No.: 13/950,958 Reply dated Response to Office Action of
A method of fabricating a gallium nitride (GaN)-based semiconductor device, the method comprising: growing GaN-based semiconductor layers on an upper surface of a GaN substrate to form a semiconductor stack; forming a sacrificial layer between the GaN substrate and the semiconductor stack; forming a support substrate on the semiconductor stack; scannin g transmitting- a laser across treugh- a lower surface of the GaN substrate the laser emittin g a laser beam that is focused a focusin g positions, such that the focusin g positions to- form a laser absorption region inside the sacrificial layer; a structure comprising the Gan substrate and the semicnductor ck; and separating the GaN substrate from the semiconductor stack to form the GaN semiconductor device, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate.
The method of claim 16, wherein the energy of the laser is lower than the bandgap of the GaN substrate and higher than the bandgap of the sacrificial layer.
The method of claim 16, wherein the laser absorption region is formed at an interface between the substrate and the semiconductor stack. 6
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device
vertical structure light emitting diode
Materials described outside the worked examples.
gallium nitride substrate
GaN
GaN-based semiconductor layers
sacrificial layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dislocation Density | ≤ 5000000 /cm2 | GaN-based semiconductor layers |
Dislocation Density | 100000000 /cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,018,027Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride (GaN)-based semiconductor device, the method comprising: growing GaN-based semiconductor layers on an upper surface of a GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; scannin g transmitting- a laser across treugh- a lower surface of the GaN substrate the laser emittin g a laser beam that is focused at focusin g positions, such that the focusin g p ositions 4e form a laser absorption region inside a structure comprising the GaN substrate and the semiconductor stack; and separating the GaN substrate from the semiconductor stack to form the GaN semiconductor device.
The method of claim 1, wherein the laser absorption region is formed inside the GaN substrate, at an interface between the GaN substrate and the semiconductor stack, or inside the semiconductor stack.
The method of claim 1, wherein the laser absorption region has a 2 SVG 13950958.09-30-2014.I₀PPSBMCPXXIFW3.CLM30002165.1.1489.157.2249.292.svg 0.45 2.533 Graph Black and white generally planar shape.
The method of claim 1, wherein: the laser has an infrared wavelength; and the laser beam comprises a pulsed laser beam, each of the beam pulses bein g focused at one of the focusin g positions. isfocused inside the structure cmrisghe GaN substate and the semicnductor sck.
The method of claim 1, wherein the laser comprises a femtosecond or picosecond pulse laser.
The method of claim 1, wherein the semiconductor stack comprises a GaN layer that contacts the GaN substrate.
The method of claim 1, further comprising: forming a sacrificial layer between the GaN substrate and the semiconductor stack, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate.
The method of claim 1, further comprising polishing a surface of the GaN substrate separated from the semiconductor stack.
The method of claim 1, ofeGaim-1-- further comprising reusing the polished GaN substrate as a growth substrate.
The method of claim 1, wherein the semiconductor stack comprises: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; and an active layer disposed between the first and second conductivity-type semiconductor layers, wherein the GaN-based semiconductor device comprises a light emitting diode.
The method of claim 1, wherein the semiconductor stack has a dislocation density of about 5 x 106/cm2or less.
The method of claim 1, wherein the growing of the GaN-based semiconductor layers comprises using metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). 4 SVG 13950958.09-30-2014.I₀PPSBMCPXXIFW3.CLM30002167.1.1489.157.2249.292.svg 0.45 2.533 Chemistry Black and white
The method of claim 1, wherein the laser absorption region is formed at an interface between the substrate and the semiconductor stack. 5 Application No.: 13/950,958 Reply dated Response to Office Action of
A method of fabricating a gallium nitride (GaN)-based semiconductor device, the method comprising: growing GaN-based semiconductor layers on an upper surface of a GaN substrate to form a semiconductor stack; forming a sacrificial layer between the GaN substrate and the semiconductor stack; forming a support substrate on the semiconductor stack; scannin g transmitting- a laser across treugh- a lower surface of the GaN substrate the laser emittin g a laser beam that is focused a focusin g positions, such that the focusin g positions to- form a laser absorption region inside the sacrificial layer; a structure comprising the Gan substrate and the semicnductor ck; and separating the GaN substrate from the semiconductor stack to form the GaN semiconductor device, wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate.
The method of claim 16, wherein the energy of the laser is lower than the bandgap of the GaN substrate and higher than the bandgap of the sacrificial layer.
The method of claim 16, wherein the laser absorption region is formed at an interface between the substrate and the semiconductor stack. 6
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device
vertical structure light emitting diode
Materials described outside the worked examples.
gallium nitride substrate
GaN
GaN-based semiconductor layers
sacrificial layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dislocation Density | ≤ 5000000 /cm2 | GaN-based semiconductor layers |
Dislocation Density | 100000000 /cm2 |
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