The method of claim 1, further comprising, between step a) and step b), a step of forming a reflective structure (107) on the surface of the second gallium nitride layer (103c) opposite to the emissive layer (103b) or on the support substrate (105), so that, after step b), the reflective structure (107) forms an interface between the second gallium nitride layer (103c) and the support substrate (105), wherein the reflective structure (107) is a Bragg mirror only comprising materials having a melting point higher than 1,100 °C.

The method of claim 1 or 2, wherein the thickness of the first gallium nitride layer (103a; 203a 3) between the emissive layer (103b) and the base of the nanowires (109; 409) is smaller than the emission wavelength of the emissive layer (103b).

The method of any of claims 1 to 3, wherein the nanowires (109) have a diameter in the range from 50 to 250 nm, and a length in the range from 0.5 to 15 pm.

The method of any of claims 1 to 4, wherein the nanowires (109) have a tapered shape with a diameter which progressively increases as the distance to the first gallium nitride layer (103a; 203a 3) increases.

A gallium nitride light-emitting diode formed by the method of any of claims 1 to 7.

The method of claim 1, further comprising, between step a) and step b), a step of forming a reflective structure (107) on the surface of the second gallium nitride layer (103c) opposite to the emissive layer (103b) or on the support substrate (105), so that, after step b), the reflective structure (107) forms an interface between the second gallium nitride layer (103c) and the support substrate (105), wherein the reflective structure (107) is a Bragg mirror only comprising materials having a melting point higher than 1,100 °C.

The method of claim 1 or 2, wherein the thickness of the first gallium nitride layer (103a; 203a 3) between the emissive layer (103b) and the base of the nanowires (109; 409) is smaller than the emission wavelength of the emissive layer (103b).

The method of any of claims 1 to 3, wherein the nanowires (109) have a diameter in the range from 50 to 250 nm, and a length in the range from 0.5 to 15 pm.

The method of any of claims 1 to 4, wherein the nanowires (109) have a tapered shape with a diameter which progressively increases as the distance to the first gallium nitride layer (103a; 203a 3) increases.

A gallium nitride light-emitting diode formed by the method of any of claims 1 to 7.

The method of claim 1, further comprising, between step a) and step b), a step of forming a reflective structure (107) on the surface of the second gallium nitride layer (103c) opposite to the emissive layer (103b) or on the support substrate (105), so that, after step b), the reflective structure (107) forms an interface between the second gallium nitride layer (103c) and the support substrate (105), wherein the reflective structure (107) is a Bragg mirror only comprising materials having a melting point higher than 1,100 °C.

The method of claim 1 or 2, wherein the thickness of the first gallium nitride layer (103a; 203a 3) between the emissive layer (103b) and the base of the nanowires (109; 409) is smaller than the emission wavelength of the emissive layer (103b).

The method of any of claims 1 to 3, wherein the nanowires (109) have a diameter in the range from 50 to 250 nm, and a length in the range from 0.5 to 15 pm.

The method of any of claims 1 to 4, wherein the nanowires (109) have a tapered shape with a diameter which progressively increases as the distance to the first gallium nitride layer (103a; 203a 3) increases.

A gallium nitride light-emitting diode formed by the method of any of claims 1 to 7.

The method of claim 1, further comprising, between step a) and step b), a step of forming a reflective structure (107) on the surface of the second gallium nitride layer (103c) opposite to the emissive layer (103b) or on the support substrate (105), so that, after step b), the reflective structure (107) forms an interface between the second gallium nitride layer (103c) and the support substrate (105), wherein the reflective structure (107) is a Bragg mirror only comprising materials having a melting point higher than 1,100 °C.

The method of claim 1 or 2, wherein the thickness of the first gallium nitride layer (103a; 203a 3) between the emissive layer (103b) and the base of the nanowires (109; 409) is smaller than the emission wavelength of the emissive layer (103b).

The method of any of claims 1 to 3, wherein the nanowires (109) have a diameter in the range from 50 to 250 nm, and a length in the range from 0.5 to 15 pm.

The method of any of claims 1 to 4, wherein the nanowires (109) have a tapered shape with a diameter which progressively increases as the distance to the first gallium nitride layer (103a; 203a 3) increases.

A gallium nitride light-emitting diode formed by the method of any of claims 1 to 7.