Patent
US 11,095,096A METHOD FOR A GaN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL)
Jung Han
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,095,096Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view depicting a vertical-cavity light-emitting device, according to some embodiments; 5
FIGS. 2H-2J depict, in elevation view, structures associated with processes for 10 forming vertical- cavity light-emitting devices, according to some …
FIGS. 3A-3B are scanning-electron micrographs showing lateral porosification of a GaN semiconductor layer;
FIG. 4 illustrates x-ray diffraction measurements associated with oxidation of porous GaN; and
FIG. 5 illustrates simulated (curve 510) and measured (curve 520) reflectance of an air/GaN distributed Bragg reflector. When referring to the drawings in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor light-emitting device comprising: a substrate; an active region comprising semiconductor material, wherein the active region has a first area and at least a portion of the active region is configured for carrier recombination; a doped semiconductor region comprising a first portion of a layer having a thickness and located between the active region and the substrate, the doped semiconductor region having a second area smaller than the first area; and a porous oxide region formed from a second portion of the layer and extending around the doped semiconductor region and located between the active region and the substrate, wherein the porous oxide comprises pores extending laterally into the second portion of the layer, and wherein the porous oxide is porous gallium oxide. Currently amended
The semiconductor light-emitting device of claim 1, wherein the active region and doped semiconductor region comprise 111 -nitride material. Previously presented
The semiconductor light-emitting device of claim 1, wherein the porous oxide region is formed in and from a same layer of material as the doped semiconductor region. Previously presented
The semiconductor light-emitting device of claim 1, wherein the doped semiconductor region comprises n-type conductivity material. Previously presented
The semiconductor light-emitting device of claim 1, wherein the active region comprises multiple quantum wells formed from layers of I II -nitride material. Previously presented
The semiconductor light-emitting device of claim 1, further comprising a conductive layer of semiconductor material formed between the doped semiconductor region and the substrate, wherein a doping density of the conductive layer is less than a doping density of the doped semiconductor region. Previously presented
The semiconductor light-emitting device of claim 1, further comprising a first distributed Bragg reflector located between the doped semiconductor region and the substrate. Previously presented
Canceled claim 1, wherein the porous oxide region has pore presented claim 1, wherein the porous oxide region has a and approximately 200 nm. Previously
Canceled
(Withdrawn-Currently Amended) A method for making an integrated light-emitting device, the method comprising: forming a mesa on a substrate that comprises an active region comprising semiconductor material, wherein the active region has a first area and at least a portion of the active region is configured for carrier recombination, and a doped semiconductor region comprising a first portion of a layer having a thickness and located between the active region and the substrate, the doped semiconductor region having a second area smaller than the first area; forming a porous oxide region from a second portion of the layer extending around the doped semiconductor region and located between the active region and the substrate, wherein the porous oxide comprises pores extending laterally into the second portion of the layer, and wherein the porous oxide is porous gallium oxide, wherein forming the porous oxide region comprises: etching the layer to form a porous region; and converting the porous region to porous oxide. Currently amended
The method of claim 17, wherein forming the doped semiconductor region comprises epitaxially growing an n-type conductivity layer of I II -nitride material. Withdrawn
The method of claim 17, further comprising forming a conductive layer of semiconductor material adjacent the doped semiconductor region, wherein a doping density of the conductive layer is less than a doping density of the doped semiconductor region. Withdrawn
The method of claim 17, wherein the etching comprises electrochemical etching with a hydrofluoric-based etchant. Withdrawn
The method of claim 17, wherein the active region is configured to produce photons when electrical current flows through the active region. Withdrawn
The method of claim 17, further comprising forming a first distributed Bragg reflector located between the doped semiconductor region and the substrate. Withdrawn
Canceled
31-32. Canceled
Canceled
The semiconductor light-emitting device of sizes less than approximately one micron. Previously
The semiconductor light-emitting device of range of pore sizes between approximately 20 nm presented
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light-emitting device/VCSEL
Materials described outside the worked examples.
semiconductor material (active region)
doped semiconductor region
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 7–20 V | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,095,096Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view depicting a vertical-cavity light-emitting device, according to some embodiments; 5
FIGS. 2H-2J depict, in elevation view, structures associated with processes for 10 forming vertical- cavity light-emitting devices, according to some …
FIGS. 3A-3B are scanning-electron micrographs showing lateral porosification of a GaN semiconductor layer;
FIG. 4 illustrates x-ray diffraction measurements associated with oxidation of porous GaN; and
FIG. 5 illustrates simulated (curve 510) and measured (curve 520) reflectance of an air/GaN distributed Bragg reflector. When referring to the drawings in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor light-emitting device comprising: a substrate; an active region comprising semiconductor material, wherein the active region has a first area and at least a portion of the active region is configured for carrier recombination; a doped semiconductor region comprising a first portion of a layer having a thickness and located between the active region and the substrate, the doped semiconductor region having a second area smaller than the first area; and a porous oxide region formed from a second portion of the layer and extending around the doped semiconductor region and located between the active region and the substrate, wherein the porous oxide comprises pores extending laterally into the second portion of the layer, and wherein the porous oxide is porous gallium oxide. Currently amended
The semiconductor light-emitting device of claim 1, wherein the active region and doped semiconductor region comprise 111 -nitride material. Previously presented
The semiconductor light-emitting device of claim 1, wherein the porous oxide region is formed in and from a same layer of material as the doped semiconductor region. Previously presented
The semiconductor light-emitting device of claim 1, wherein the doped semiconductor region comprises n-type conductivity material. Previously presented
The semiconductor light-emitting device of claim 1, wherein the active region comprises multiple quantum wells formed from layers of I II -nitride material. Previously presented
The semiconductor light-emitting device of claim 1, further comprising a conductive layer of semiconductor material formed between the doped semiconductor region and the substrate, wherein a doping density of the conductive layer is less than a doping density of the doped semiconductor region. Previously presented
The semiconductor light-emitting device of claim 1, further comprising a first distributed Bragg reflector located between the doped semiconductor region and the substrate. Previously presented
Canceled claim 1, wherein the porous oxide region has pore presented claim 1, wherein the porous oxide region has a and approximately 200 nm. Previously
Canceled
(Withdrawn-Currently Amended) A method for making an integrated light-emitting device, the method comprising: forming a mesa on a substrate that comprises an active region comprising semiconductor material, wherein the active region has a first area and at least a portion of the active region is configured for carrier recombination, and a doped semiconductor region comprising a first portion of a layer having a thickness and located between the active region and the substrate, the doped semiconductor region having a second area smaller than the first area; forming a porous oxide region from a second portion of the layer extending around the doped semiconductor region and located between the active region and the substrate, wherein the porous oxide comprises pores extending laterally into the second portion of the layer, and wherein the porous oxide is porous gallium oxide, wherein forming the porous oxide region comprises: etching the layer to form a porous region; and converting the porous region to porous oxide. Currently amended
The method of claim 17, wherein forming the doped semiconductor region comprises epitaxially growing an n-type conductivity layer of I II -nitride material. Withdrawn
The method of claim 17, further comprising forming a conductive layer of semiconductor material adjacent the doped semiconductor region, wherein a doping density of the conductive layer is less than a doping density of the doped semiconductor region. Withdrawn
The method of claim 17, wherein the etching comprises electrochemical etching with a hydrofluoric-based etchant. Withdrawn
The method of claim 17, wherein the active region is configured to produce photons when electrical current flows through the active region. Withdrawn
The method of claim 17, further comprising forming a first distributed Bragg reflector located between the doped semiconductor region and the substrate. Withdrawn
Canceled
31-32. Canceled
Canceled
The semiconductor light-emitting device of sizes less than approximately one micron. Previously
The semiconductor light-emitting device of range of pore sizes between approximately 20 nm presented
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light-emitting device/VCSEL
Materials described outside the worked examples.
semiconductor material (active region)
doped semiconductor region
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 7–20 V | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,095,096Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view depicting a vertical-cavity light-emitting device, according to some embodiments; 5
FIGS. 2H-2J depict, in elevation view, structures associated with processes for 10 forming vertical- cavity light-emitting devices, according to some …
FIGS. 3A-3B are scanning-electron micrographs showing lateral porosification of a GaN semiconductor layer;
FIG. 4 illustrates x-ray diffraction measurements associated with oxidation of porous GaN; and
FIG. 5 illustrates simulated (curve 510) and measured (curve 520) reflectance of an air/GaN distributed Bragg reflector. When referring to the drawings in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor light-emitting device comprising: a substrate; an active region comprising semiconductor material, wherein the active region has a first area and at least a portion of the active region is configured for carrier recombination; a doped semiconductor region comprising a first portion of a layer having a thickness and located between the active region and the substrate, the doped semiconductor region having a second area smaller than the first area; and a porous oxide region formed from a second portion of the layer and extending around the doped semiconductor region and located between the active region and the substrate, wherein the porous oxide comprises pores extending laterally into the second portion of the layer, and wherein the porous oxide is porous gallium oxide. Currently amended
The semiconductor light-emitting device of claim 1, wherein the active region and doped semiconductor region comprise 111 -nitride material. Previously presented
The semiconductor light-emitting device of claim 1, wherein the porous oxide region is formed in and from a same layer of material as the doped semiconductor region. Previously presented
The semiconductor light-emitting device of claim 1, wherein the doped semiconductor region comprises n-type conductivity material. Previously presented
The semiconductor light-emitting device of claim 1, wherein the active region comprises multiple quantum wells formed from layers of I II -nitride material. Previously presented
The semiconductor light-emitting device of claim 1, further comprising a conductive layer of semiconductor material formed between the doped semiconductor region and the substrate, wherein a doping density of the conductive layer is less than a doping density of the doped semiconductor region. Previously presented
The semiconductor light-emitting device of claim 1, further comprising a first distributed Bragg reflector located between the doped semiconductor region and the substrate. Previously presented
Canceled claim 1, wherein the porous oxide region has pore presented claim 1, wherein the porous oxide region has a and approximately 200 nm. Previously
Canceled
(Withdrawn-Currently Amended) A method for making an integrated light-emitting device, the method comprising: forming a mesa on a substrate that comprises an active region comprising semiconductor material, wherein the active region has a first area and at least a portion of the active region is configured for carrier recombination, and a doped semiconductor region comprising a first portion of a layer having a thickness and located between the active region and the substrate, the doped semiconductor region having a second area smaller than the first area; forming a porous oxide region from a second portion of the layer extending around the doped semiconductor region and located between the active region and the substrate, wherein the porous oxide comprises pores extending laterally into the second portion of the layer, and wherein the porous oxide is porous gallium oxide, wherein forming the porous oxide region comprises: etching the layer to form a porous region; and converting the porous region to porous oxide. Currently amended
The method of claim 17, wherein forming the doped semiconductor region comprises epitaxially growing an n-type conductivity layer of I II -nitride material. Withdrawn
The method of claim 17, further comprising forming a conductive layer of semiconductor material adjacent the doped semiconductor region, wherein a doping density of the conductive layer is less than a doping density of the doped semiconductor region. Withdrawn
The method of claim 17, wherein the etching comprises electrochemical etching with a hydrofluoric-based etchant. Withdrawn
The method of claim 17, wherein the active region is configured to produce photons when electrical current flows through the active region. Withdrawn
The method of claim 17, further comprising forming a first distributed Bragg reflector located between the doped semiconductor region and the substrate. Withdrawn
Canceled
31-32. Canceled
Canceled
The semiconductor light-emitting device of sizes less than approximately one micron. Previously
The semiconductor light-emitting device of range of pore sizes between approximately 20 nm presented
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light-emitting device/VCSEL
Materials described outside the worked examples.
semiconductor material (active region)
doped semiconductor region
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 7–20 V | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,095,096Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view depicting a vertical-cavity light-emitting device, according to some embodiments; 5
FIGS. 2H-2J depict, in elevation view, structures associated with processes for 10 forming vertical- cavity light-emitting devices, according to some …
FIGS. 3A-3B are scanning-electron micrographs showing lateral porosification of a GaN semiconductor layer;
FIG. 4 illustrates x-ray diffraction measurements associated with oxidation of porous GaN; and
FIG. 5 illustrates simulated (curve 510) and measured (curve 520) reflectance of an air/GaN distributed Bragg reflector. When referring to the drawings in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor light-emitting device comprising: a substrate; an active region comprising semiconductor material, wherein the active region has a first area and at least a portion of the active region is configured for carrier recombination; a doped semiconductor region comprising a first portion of a layer having a thickness and located between the active region and the substrate, the doped semiconductor region having a second area smaller than the first area; and a porous oxide region formed from a second portion of the layer and extending around the doped semiconductor region and located between the active region and the substrate, wherein the porous oxide comprises pores extending laterally into the second portion of the layer, and wherein the porous oxide is porous gallium oxide. Currently amended
The semiconductor light-emitting device of claim 1, wherein the active region and doped semiconductor region comprise 111 -nitride material. Previously presented
The semiconductor light-emitting device of claim 1, wherein the porous oxide region is formed in and from a same layer of material as the doped semiconductor region. Previously presented
The semiconductor light-emitting device of claim 1, wherein the doped semiconductor region comprises n-type conductivity material. Previously presented
The semiconductor light-emitting device of claim 1, wherein the active region comprises multiple quantum wells formed from layers of I II -nitride material. Previously presented
The semiconductor light-emitting device of claim 1, further comprising a conductive layer of semiconductor material formed between the doped semiconductor region and the substrate, wherein a doping density of the conductive layer is less than a doping density of the doped semiconductor region. Previously presented
The semiconductor light-emitting device of claim 1, further comprising a first distributed Bragg reflector located between the doped semiconductor region and the substrate. Previously presented
Canceled claim 1, wherein the porous oxide region has pore presented claim 1, wherein the porous oxide region has a and approximately 200 nm. Previously
Canceled
(Withdrawn-Currently Amended) A method for making an integrated light-emitting device, the method comprising: forming a mesa on a substrate that comprises an active region comprising semiconductor material, wherein the active region has a first area and at least a portion of the active region is configured for carrier recombination, and a doped semiconductor region comprising a first portion of a layer having a thickness and located between the active region and the substrate, the doped semiconductor region having a second area smaller than the first area; forming a porous oxide region from a second portion of the layer extending around the doped semiconductor region and located between the active region and the substrate, wherein the porous oxide comprises pores extending laterally into the second portion of the layer, and wherein the porous oxide is porous gallium oxide, wherein forming the porous oxide region comprises: etching the layer to form a porous region; and converting the porous region to porous oxide. Currently amended
The method of claim 17, wherein forming the doped semiconductor region comprises epitaxially growing an n-type conductivity layer of I II -nitride material. Withdrawn
The method of claim 17, further comprising forming a conductive layer of semiconductor material adjacent the doped semiconductor region, wherein a doping density of the conductive layer is less than a doping density of the doped semiconductor region. Withdrawn
The method of claim 17, wherein the etching comprises electrochemical etching with a hydrofluoric-based etchant. Withdrawn
The method of claim 17, wherein the active region is configured to produce photons when electrical current flows through the active region. Withdrawn
The method of claim 17, further comprising forming a first distributed Bragg reflector located between the doped semiconductor region and the substrate. Withdrawn
Canceled
31-32. Canceled
Canceled
The semiconductor light-emitting device of sizes less than approximately one micron. Previously
The semiconductor light-emitting device of range of pore sizes between approximately 20 nm presented
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light-emitting device/VCSEL
Materials described outside the worked examples.
semiconductor material (active region)
doped semiconductor region
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 7–20 V | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
first distributed Bragg reflector (bottom DBR)
second distributed Bragg reflector (top DBR)
porous gallium oxide
Ga₂O₃
III-nitride material
n-type III-nitride
dielectric material
GaN
aluminum-gallium oxide
indium-gallium oxide
| — |
Thickness | 80–2000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 50–500 nm | — |
Thickness | 100–250 nm | — |
Thickness | 50–200 nm | — |
Thickness | 20–100 nm | — |
Thickness | 200–800 nm | — |
Thickness | 5–15 µm | — |
Thickness | 1–50 µm | — |
Duration | 1–30 hours | — |
Temperature | 600–1000 °C | — |
Thickness | 150–5000 nm | — |
Thickness | 400–450 nm | — |
first distributed Bragg reflector (bottom DBR)
second distributed Bragg reflector (top DBR)
porous gallium oxide
Ga₂O₃
III-nitride material
n-type III-nitride
dielectric material
GaN
aluminum-gallium oxide
indium-gallium oxide
| — |
Thickness | 80–2000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 50–500 nm | — |
Thickness | 100–250 nm | — |
Thickness | 50–200 nm | — |
Thickness | 20–100 nm | — |
Thickness | 200–800 nm | — |
Thickness | 5–15 µm | — |
Thickness | 1–50 µm | — |
Duration | 1–30 hours | — |
Temperature | 600–1000 °C | — |
Thickness | 150–5000 nm | — |
Thickness | 400–450 nm | — |
first distributed Bragg reflector (bottom DBR)
second distributed Bragg reflector (top DBR)
porous gallium oxide
Ga₂O₃
III-nitride material
n-type III-nitride
dielectric material
GaN
aluminum-gallium oxide
indium-gallium oxide
| — |
Thickness | 80–2000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 50–500 nm | — |
Thickness | 100–250 nm | — |
Thickness | 50–200 nm | — |
Thickness | 20–100 nm | — |
Thickness | 200–800 nm | — |
Thickness | 5–15 µm | — |
Thickness | 1–50 µm | — |
Duration | 1–30 hours | — |
Temperature | 600–1000 °C | — |
Thickness | 150–5000 nm | — |
Thickness | 400–450 nm | — |
first distributed Bragg reflector (bottom DBR)
second distributed Bragg reflector (top DBR)
porous gallium oxide
Ga₂O₃
III-nitride material
n-type III-nitride
dielectric material
GaN
aluminum-gallium oxide
indium-gallium oxide
| — |
Thickness | 80–2000 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 50–500 nm | — |
Thickness | 100–250 nm | — |
Thickness | 50–200 nm | — |
Thickness | 20–100 nm | — |
Thickness | 200–800 nm | — |
Thickness | 5–15 µm | — |
Thickness | 1–50 µm | — |
Duration | 1–30 hours | — |
Temperature | 600–1000 °C | — |
Thickness | 150–5000 nm | — |
Thickness | 400–450 nm | — |