An antistatic Gallium Nitride, GaN, based light emitting device, comprising: a substrate; an n-type GaN-based epitaxial layer formed on the substrate, an active layer formed on the n-type GaN-based epitaxial layer, and a p-type GaN-based epitaxial layer formed on the active layer; a GaN Schottky diode on a part of the p-type GaN-based epitaxial layer, the GaN Schottky diode comprising an undoped GaN-based epitaxial layer on said part of the p-type GaN-based epitaxial layer, an ohmic contact electrode on a part of the undoped GaN-based epitaxial layer and a Schottky contact electrode on another part of the undoped GaN-based epitaxial layer; a transparent conducting layer on another part of the p-type GaN-based epitaxial layer; an n-electrode on a part of the n-type GaN-based epitaxial layer; a p-electrode on the transparent conducting layer and electrically connected with the ohmic contact electrode; an insulation layer formed on side surfaces of the undoped GaN-based epitaxial layer, the p-type GaN-based epitaxial layer, the active layer and the n-type GaN-based epitaxial layer; and a connecting conductor on the insulation layer and another part of the n-type GaN-based epitaxial layer, and electrically connected with the Schottky contact electrode and the n-electrode.

A method for fabricating an antistatic Gallium Nitride, GaN, based light emitting device, comprising: 1) growing an n-type GaN-based epitaxial layer, an active layer, a p-type GaN-based epitaxial layer and an undoped GaN-based epitaxial layer on a substrate sequentially; 2) etching to remove parts of the undoped GaN-based epitaxial layer, the p-type GaN-based epitaxial layer, the active layer and the n-type GaN-based epitaxial layer, to expose a part of the n-type GaN-based epitaxial layer, with the unetched part defined as an emitting area; 3) etching to remove the undoped GaN-based epitaxial layer on a part of the emitting area, to expose a part of the p-type GaN-based epitaxial layer; 4) forming an ohmic contact electrode on a part of the undoped GaN-based epitaxial layer, and forming a Schottky contact electrode on another part of the undoped GaN-based epitaxial layer; 5) forming a transparent conducting layer on the exposed p-type GaN-based epitaxial layer; 6) forming a p-electrode on the transparent conducting layer such that the p-electrode is electrically connected with the ohmic contact electrode; 7) forming an n-electrode on the exposed n-type GaN-based epitaxial layer; 8) forming an insulation layer on a sidewall surface of the emitting area; and 9) forming a connecting conductor on the insulation layer such that the connecting conductor is electrically connected with the n-electrode and the Schottky contact electrode.

An antistatic Gallium Nitride, GaN, based light emitting device, comprising: a substrate; an n-type GaN-based epitaxial layer formed on the substrate, an active layer formed on the n-type GaN-based epitaxial layer, and a p-type GaN-based epitaxial layer formed on the active layer; a GaN Schottky diode on a part of the p-type GaN-based epitaxial layer, the GaN Schottky diode comprising an undoped GaN-based epitaxial layer on said part of the p-type GaN-based epitaxial layer, an ohmic contact electrode on a part of the undoped GaN-based epitaxial layer and a Schottky contact electrode on another part of the undoped GaN-based epitaxial layer; a transparent conducting layer on another part of the p-type GaN-based epitaxial layer; an n-electrode on a part of the n-type GaN-based epitaxial layer; a p-electrode on the transparent conducting layer and electrically connected with the ohmic contact electrode; an insulation layer formed on side surfaces of the undoped GaN-based epitaxial layer, the p-type GaN-based epitaxial layer, the active layer and the n-type GaN-based epitaxial layer; and a connecting conductor on the insulation layer and another part of the n-type GaN-based epitaxial layer, and electrically connected with the Schottky contact electrode and the n-electrode.

A method for fabricating an antistatic Gallium Nitride, GaN, based light emitting device, comprising: 1) growing an n-type GaN-based epitaxial layer, an active layer, a p-type GaN-based epitaxial layer and an undoped GaN-based epitaxial layer on a substrate sequentially; 2) etching to remove parts of the undoped GaN-based epitaxial layer, the p-type GaN-based epitaxial layer, the active layer and the n-type GaN-based epitaxial layer, to expose a part of the n-type GaN-based epitaxial layer, with the unetched part defined as an emitting area; 3) etching to remove the undoped GaN-based epitaxial layer on a part of the emitting area, to expose a part of the p-type GaN-based epitaxial layer; 4) forming an ohmic contact electrode on a part of the undoped GaN-based epitaxial layer, and forming a Schottky contact electrode on another part of the undoped GaN-based epitaxial layer; 5) forming a transparent conducting layer on the exposed p-type GaN-based epitaxial layer; 6) forming a p-electrode on the transparent conducting layer such that the p-electrode is electrically connected with the ohmic contact electrode; 7) forming an n-electrode on the exposed n-type GaN-based epitaxial layer; 8) forming an insulation layer on a sidewall surface of the emitting area; and 9) forming a connecting conductor on the insulation layer such that the connecting conductor is electrically connected with the n-electrode and the Schottky contact electrode.

An antistatic Gallium Nitride, GaN, based light emitting device, comprising: a substrate; an n-type GaN-based epitaxial layer formed on the substrate, an active layer formed on the n-type GaN-based epitaxial layer, and a p-type GaN-based epitaxial layer formed on the active layer; a GaN Schottky diode on a part of the p-type GaN-based epitaxial layer, the GaN Schottky diode comprising an undoped GaN-based epitaxial layer on said part of the p-type GaN-based epitaxial layer, an ohmic contact electrode on a part of the undoped GaN-based epitaxial layer and a Schottky contact electrode on another part of the undoped GaN-based epitaxial layer; a transparent conducting layer on another part of the p-type GaN-based epitaxial layer; an n-electrode on a part of the n-type GaN-based epitaxial layer; a p-electrode on the transparent conducting layer and electrically connected with the ohmic contact electrode; an insulation layer formed on side surfaces of the undoped GaN-based epitaxial layer, the p-type GaN-based epitaxial layer, the active layer and the n-type GaN-based epitaxial layer; and a connecting conductor on the insulation layer and another part of the n-type GaN-based epitaxial layer, and electrically connected with the Schottky contact electrode and the n-electrode.

A method for fabricating an antistatic Gallium Nitride, GaN, based light emitting device, comprising: 1) growing an n-type GaN-based epitaxial layer, an active layer, a p-type GaN-based epitaxial layer and an undoped GaN-based epitaxial layer on a substrate sequentially; 2) etching to remove parts of the undoped GaN-based epitaxial layer, the p-type GaN-based epitaxial layer, the active layer and the n-type GaN-based epitaxial layer, to expose a part of the n-type GaN-based epitaxial layer, with the unetched part defined as an emitting area; 3) etching to remove the undoped GaN-based epitaxial layer on a part of the emitting area, to expose a part of the p-type GaN-based epitaxial layer; 4) forming an ohmic contact electrode on a part of the undoped GaN-based epitaxial layer, and forming a Schottky contact electrode on another part of the undoped GaN-based epitaxial layer; 5) forming a transparent conducting layer on the exposed p-type GaN-based epitaxial layer; 6) forming a p-electrode on the transparent conducting layer such that the p-electrode is electrically connected with the ohmic contact electrode; 7) forming an n-electrode on the exposed n-type GaN-based epitaxial layer; 8) forming an insulation layer on a sidewall surface of the emitting area; and 9) forming a connecting conductor on the insulation layer such that the connecting conductor is electrically connected with the n-electrode and the Schottky contact electrode.

An antistatic Gallium Nitride, GaN, based light emitting device, comprising: a substrate; an n-type GaN-based epitaxial layer formed on the substrate, an active layer formed on the n-type GaN-based epitaxial layer, and a p-type GaN-based epitaxial layer formed on the active layer; a GaN Schottky diode on a part of the p-type GaN-based epitaxial layer, the GaN Schottky diode comprising an undoped GaN-based epitaxial layer on said part of the p-type GaN-based epitaxial layer, an ohmic contact electrode on a part of the undoped GaN-based epitaxial layer and a Schottky contact electrode on another part of the undoped GaN-based epitaxial layer; a transparent conducting layer on another part of the p-type GaN-based epitaxial layer; an n-electrode on a part of the n-type GaN-based epitaxial layer; a p-electrode on the transparent conducting layer and electrically connected with the ohmic contact electrode; an insulation layer formed on side surfaces of the undoped GaN-based epitaxial layer, the p-type GaN-based epitaxial layer, the active layer and the n-type GaN-based epitaxial layer; and a connecting conductor on the insulation layer and another part of the n-type GaN-based epitaxial layer, and electrically connected with the Schottky contact electrode and the n-electrode.

A method for fabricating an antistatic Gallium Nitride, GaN, based light emitting device, comprising: 1) growing an n-type GaN-based epitaxial layer, an active layer, a p-type GaN-based epitaxial layer and an undoped GaN-based epitaxial layer on a substrate sequentially; 2) etching to remove parts of the undoped GaN-based epitaxial layer, the p-type GaN-based epitaxial layer, the active layer and the n-type GaN-based epitaxial layer, to expose a part of the n-type GaN-based epitaxial layer, with the unetched part defined as an emitting area; 3) etching to remove the undoped GaN-based epitaxial layer on a part of the emitting area, to expose a part of the p-type GaN-based epitaxial layer; 4) forming an ohmic contact electrode on a part of the undoped GaN-based epitaxial layer, and forming a Schottky contact electrode on another part of the undoped GaN-based epitaxial layer; 5) forming a transparent conducting layer on the exposed p-type GaN-based epitaxial layer; 6) forming a p-electrode on the transparent conducting layer such that the p-electrode is electrically connected with the ohmic contact electrode; 7) forming an n-electrode on the exposed n-type GaN-based epitaxial layer; 8) forming an insulation layer on a sidewall surface of the emitting area; and 9) forming a connecting conductor on the insulation layer such that the connecting conductor is electrically connected with the n-electrode and the Schottky contact electrode.