Patent
US 11,239,321GaN LATERAL VERTICAL HJFET WITH SOURCE-P BLOCK CONTACT
Gangfeng Ye
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,239,321Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is simplified exemplary cross-sectional diagram of a lateral vertical HJFET with source-P block contact in accordance with embodiments of the current invention.
Figure 2 illustrates exemplary diagrams of a regrown process in accordance with embodiments of the current invention.
Figure 3 illustrates exemplary diagrams of forming gate with enhanced Ohmic contact process in accordance with embodiments of the current invention.
Figure 4 illustrates exemplary diagrams of forming an enhanced Ohmic contact and a dielectric layer over the gate layer in accordance with embodiments of the current invention.
Figure 5 illustrates an exemplary flow chart of the process with a barrier regrown layer for enhanced lateral channel performance in accordance with embodiments of the current invention.
Figure 6 illustrates an exemplary flow chart of the process with a patterned regrowth for enhanced Ohmic contact in accordance with embodiments of the current invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: as-growing epitaxial layers on top of a N+ gallium nitride (GaN) substrate, wherein an N-type GaN drift layer is grown over the N+ substrate layer, and a P-type block layer is grown over the N-type GaN drift layer; re-growing a first N-type regrown layer over the P-type block layer, wherein the first N-type regrown layer encapsulates the P-type block layer and surface dopant; etching trenches through the first N-type regrown layer and the P-type block layer; and re-growing a second regrown layer over the first N-type regrown layer and in the trench to form an N-type channel and an AIGaN/GaN 2D Gas channel. Original
The method of claim 1, wherein the re-growing the first N- type regrown layer is a patterned regrown. Original
The method claim 1, wherein the first regrown N-type layer is an anti-p-doping layer. Original
The method of claim 1, wherein the second regrown layer is an aluminum gallium nitride (AIGaN)/gallium nitride (GaN) layer. Original
The method of claim 1, further comprising: growing a second P-type layer over the second regrown layer; depositing gate metals over the second P-type layer; and depositing a gate metal over the P-type block layer over a contact gap of the first regrown N-type layer and the second regrown layer. Original
A method, comprising: as-growing epitaxial layers on top of a N+ GaN substrate, wherein an N-type GaN drift layer is grown over the N+ substrate layer, and a P-type block layer is grown over the N-type GaN drift layer; and re-growing one or more regrown layers over the P-type block layer with a patterned regrown by re-growing a first N-type regrown layer encapsulating the P-type block layer and surface dopant, etching trench through the first N- type regrown layer and the P-type block layer, and re-growing a second regrown layer over the first N-type regrown layer and in the trench to form an N-type channel and an AIGaN/GaN 2D Gas channel. Currently amended
The method of claim 9, wherein the patterned regrown is performed by depositing a dielectric layer over the P-type block layer before the regrown process. Original
The method of claim 9, wherein the first regrown N-type layer is an anti-p-doping layer. Original
The method of claim 9, further comprising: growing a second P-type layer over the second regrown layer; depositing gate metals over the second P-type layer; and depositing a gate metal over the P-type block layer over a contact gap of the first regrown N-type layer and the second regrown layer. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN Lateral Vertical HJFET with Source-P Block Contact
Materials described outside the worked examples.
N+ gallium nitride substrate
GaN
AlGaN/GaN second regrown layer
AlGaN/GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,239,321Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is simplified exemplary cross-sectional diagram of a lateral vertical HJFET with source-P block contact in accordance with embodiments of the current invention.
Figure 2 illustrates exemplary diagrams of a regrown process in accordance with embodiments of the current invention.
Figure 3 illustrates exemplary diagrams of forming gate with enhanced Ohmic contact process in accordance with embodiments of the current invention.
Figure 4 illustrates exemplary diagrams of forming an enhanced Ohmic contact and a dielectric layer over the gate layer in accordance with embodiments of the current invention.
Figure 5 illustrates an exemplary flow chart of the process with a barrier regrown layer for enhanced lateral channel performance in accordance with embodiments of the current invention.
Figure 6 illustrates an exemplary flow chart of the process with a patterned regrowth for enhanced Ohmic contact in accordance with embodiments of the current invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: as-growing epitaxial layers on top of a N+ gallium nitride (GaN) substrate, wherein an N-type GaN drift layer is grown over the N+ substrate layer, and a P-type block layer is grown over the N-type GaN drift layer; re-growing a first N-type regrown layer over the P-type block layer, wherein the first N-type regrown layer encapsulates the P-type block layer and surface dopant; etching trenches through the first N-type regrown layer and the P-type block layer; and re-growing a second regrown layer over the first N-type regrown layer and in the trench to form an N-type channel and an AIGaN/GaN 2D Gas channel. Original
The method of claim 1, wherein the re-growing the first N- type regrown layer is a patterned regrown. Original
The method claim 1, wherein the first regrown N-type layer is an anti-p-doping layer. Original
The method of claim 1, wherein the second regrown layer is an aluminum gallium nitride (AIGaN)/gallium nitride (GaN) layer. Original
The method of claim 1, further comprising: growing a second P-type layer over the second regrown layer; depositing gate metals over the second P-type layer; and depositing a gate metal over the P-type block layer over a contact gap of the first regrown N-type layer and the second regrown layer. Original
A method, comprising: as-growing epitaxial layers on top of a N+ GaN substrate, wherein an N-type GaN drift layer is grown over the N+ substrate layer, and a P-type block layer is grown over the N-type GaN drift layer; and re-growing one or more regrown layers over the P-type block layer with a patterned regrown by re-growing a first N-type regrown layer encapsulating the P-type block layer and surface dopant, etching trench through the first N- type regrown layer and the P-type block layer, and re-growing a second regrown layer over the first N-type regrown layer and in the trench to form an N-type channel and an AIGaN/GaN 2D Gas channel. Currently amended
The method of claim 9, wherein the patterned regrown is performed by depositing a dielectric layer over the P-type block layer before the regrown process. Original
The method of claim 9, wherein the first regrown N-type layer is an anti-p-doping layer. Original
The method of claim 9, further comprising: growing a second P-type layer over the second regrown layer; depositing gate metals over the second P-type layer; and depositing a gate metal over the P-type block layer over a contact gap of the first regrown N-type layer and the second regrown layer. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN Lateral Vertical HJFET with Source-P Block Contact
Materials described outside the worked examples.
N+ gallium nitride substrate
GaN
AlGaN/GaN second regrown layer
AlGaN/GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,239,321Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is simplified exemplary cross-sectional diagram of a lateral vertical HJFET with source-P block contact in accordance with embodiments of the current invention.
Figure 2 illustrates exemplary diagrams of a regrown process in accordance with embodiments of the current invention.
Figure 3 illustrates exemplary diagrams of forming gate with enhanced Ohmic contact process in accordance with embodiments of the current invention.
Figure 4 illustrates exemplary diagrams of forming an enhanced Ohmic contact and a dielectric layer over the gate layer in accordance with embodiments of the current invention.
Figure 5 illustrates an exemplary flow chart of the process with a barrier regrown layer for enhanced lateral channel performance in accordance with embodiments of the current invention.
Figure 6 illustrates an exemplary flow chart of the process with a patterned regrowth for enhanced Ohmic contact in accordance with embodiments of the current invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: as-growing epitaxial layers on top of a N+ gallium nitride (GaN) substrate, wherein an N-type GaN drift layer is grown over the N+ substrate layer, and a P-type block layer is grown over the N-type GaN drift layer; re-growing a first N-type regrown layer over the P-type block layer, wherein the first N-type regrown layer encapsulates the P-type block layer and surface dopant; etching trenches through the first N-type regrown layer and the P-type block layer; and re-growing a second regrown layer over the first N-type regrown layer and in the trench to form an N-type channel and an AIGaN/GaN 2D Gas channel. Original
The method of claim 1, wherein the re-growing the first N- type regrown layer is a patterned regrown. Original
The method claim 1, wherein the first regrown N-type layer is an anti-p-doping layer. Original
The method of claim 1, wherein the second regrown layer is an aluminum gallium nitride (AIGaN)/gallium nitride (GaN) layer. Original
The method of claim 1, further comprising: growing a second P-type layer over the second regrown layer; depositing gate metals over the second P-type layer; and depositing a gate metal over the P-type block layer over a contact gap of the first regrown N-type layer and the second regrown layer. Original
A method, comprising: as-growing epitaxial layers on top of a N+ GaN substrate, wherein an N-type GaN drift layer is grown over the N+ substrate layer, and a P-type block layer is grown over the N-type GaN drift layer; and re-growing one or more regrown layers over the P-type block layer with a patterned regrown by re-growing a first N-type regrown layer encapsulating the P-type block layer and surface dopant, etching trench through the first N- type regrown layer and the P-type block layer, and re-growing a second regrown layer over the first N-type regrown layer and in the trench to form an N-type channel and an AIGaN/GaN 2D Gas channel. Currently amended
The method of claim 9, wherein the patterned regrown is performed by depositing a dielectric layer over the P-type block layer before the regrown process. Original
The method of claim 9, wherein the first regrown N-type layer is an anti-p-doping layer. Original
The method of claim 9, further comprising: growing a second P-type layer over the second regrown layer; depositing gate metals over the second P-type layer; and depositing a gate metal over the P-type block layer over a contact gap of the first regrown N-type layer and the second regrown layer. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN Lateral Vertical HJFET with Source-P Block Contact
Materials described outside the worked examples.
N+ gallium nitride substrate
GaN
AlGaN/GaN second regrown layer
AlGaN/GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,239,321Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is simplified exemplary cross-sectional diagram of a lateral vertical HJFET with source-P block contact in accordance with embodiments of the current invention.
Figure 2 illustrates exemplary diagrams of a regrown process in accordance with embodiments of the current invention.
Figure 3 illustrates exemplary diagrams of forming gate with enhanced Ohmic contact process in accordance with embodiments of the current invention.
Figure 4 illustrates exemplary diagrams of forming an enhanced Ohmic contact and a dielectric layer over the gate layer in accordance with embodiments of the current invention.
Figure 5 illustrates an exemplary flow chart of the process with a barrier regrown layer for enhanced lateral channel performance in accordance with embodiments of the current invention.
Figure 6 illustrates an exemplary flow chart of the process with a patterned regrowth for enhanced Ohmic contact in accordance with embodiments of the current invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: as-growing epitaxial layers on top of a N+ gallium nitride (GaN) substrate, wherein an N-type GaN drift layer is grown over the N+ substrate layer, and a P-type block layer is grown over the N-type GaN drift layer; re-growing a first N-type regrown layer over the P-type block layer, wherein the first N-type regrown layer encapsulates the P-type block layer and surface dopant; etching trenches through the first N-type regrown layer and the P-type block layer; and re-growing a second regrown layer over the first N-type regrown layer and in the trench to form an N-type channel and an AIGaN/GaN 2D Gas channel. Original
The method of claim 1, wherein the re-growing the first N- type regrown layer is a patterned regrown. Original
The method claim 1, wherein the first regrown N-type layer is an anti-p-doping layer. Original
The method of claim 1, wherein the second regrown layer is an aluminum gallium nitride (AIGaN)/gallium nitride (GaN) layer. Original
The method of claim 1, further comprising: growing a second P-type layer over the second regrown layer; depositing gate metals over the second P-type layer; and depositing a gate metal over the P-type block layer over a contact gap of the first regrown N-type layer and the second regrown layer. Original
A method, comprising: as-growing epitaxial layers on top of a N+ GaN substrate, wherein an N-type GaN drift layer is grown over the N+ substrate layer, and a P-type block layer is grown over the N-type GaN drift layer; and re-growing one or more regrown layers over the P-type block layer with a patterned regrown by re-growing a first N-type regrown layer encapsulating the P-type block layer and surface dopant, etching trench through the first N- type regrown layer and the P-type block layer, and re-growing a second regrown layer over the first N-type regrown layer and in the trench to form an N-type channel and an AIGaN/GaN 2D Gas channel. Currently amended
The method of claim 9, wherein the patterned regrown is performed by depositing a dielectric layer over the P-type block layer before the regrown process. Original
The method of claim 9, wherein the first regrown N-type layer is an anti-p-doping layer. Original
The method of claim 9, further comprising: growing a second P-type layer over the second regrown layer; depositing gate metals over the second P-type layer; and depositing a gate metal over the P-type block layer over a contact gap of the first regrown N-type layer and the second regrown layer. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN Lateral Vertical HJFET with Source-P Block Contact
Materials described outside the worked examples.
N+ gallium nitride substrate
GaN
AlGaN/GaN second regrown layer
AlGaN/GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
dielectric layer (regrowth mask)
dielectric layer (regrowth mask)
dielectric layer (regrowth mask)
dielectric layer (regrowth mask)