Patent
US 8,324,004GaN Based Group III-V Nitride Semiconductor Light-Emitting Diode and Method for Fabricating the Same
Joon-seop Kwak
US
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US 8,324,004Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a conventional light-emitting diode (LED) based on G aN based IlIl -V nitrides includes an n-type GaN layer 12 on a sapphire substrate 10. The n-type …
FIG. 2. R eference numeral 40 denotes a submount, reference numerals 42a and 42b denote pad layers, reference numerals 44a and 44b denote first and 3 second …
FIG. 3 is a sectional view of another conventional GaN based Ilil-V nitride semiconductor laser diode having a waveguide ridge, in which n-type and p-type …
FIG. 4 is a sectional view illustrating the semiconductor laser diode of
FIG. 5, reference numeral 50 denotes a light- transmitting conductive layer. The light-transmitting conductive layer 50 is used as a first electrode. A pad …
FIG. 6, a light-reflecting conductive layer 70 acting as a first electrode is formed on the second compound semiconductor layer 54. A light-transmitting …
FIG. 7,. a high-resistant substrate pattern 60a is present on the bottom of the first compound semiconductor layer 58. The high-resistant substrate pattern 60a …
FIG. 8, a conductive layer 70 acting as a first electrode is formed on the second compound semiconductor layer 54. The same high- resistant substrate pattern …
FIG. 9. The first via hole h3 extends past the surface of the first compound semiconductor layer 152 not to expose the bottom surface of the first compound …
FIG. 10, a first via hole h3 may be formed by extending the first dent h 1 to the first compound semiconductor layer 152 through the substrate 150. Although not …
FIG. 11, except that the second via hole h4 is formed in the substrate 150 to expose a portion of the second compound semiconductor layer 152 aligned with the …
FIG. 12, a portion of the bottom of the first compound semiconductor layer 152 on which the substrate pattern 150 is not present may be etched by a …
FIG. 13, except that no step exits on the bottom of the first compound semiconductor layer 152 because the bottom of the first compound semiconductor l ayer 152 …
FIG. 14 is the same as in Embodiment 9 shown in
FIG. 15. Also, the first compound semiconductor layer 152 shown in
FIG. 16 is the same as in Embodiment.11 shown in
FIG. 17, reference numeral 150 denotes a high-resistant substrate. The high-resistant substrate 150 is an etch-resistant sapphire substrate. Material layers …
FIG. 18 according to the present invention; and [0040]
FIG. 19, except that a second via hole h4 is formed in the substrate 150 to expose a portion of the bottom of the first compound semiconductor layer 152. An …
FIG. 21 is the same as in Embodiment 15 shown in
FIG. 22, a substrate 1 50 is biased to a side at the bottom of the first compound semiconductor layer 152 from the bottom center. An ohmic contact layer 180 is …
FIG. 23, a first compound semiconductor layer 202 is formed on a high-resistant substrate 200. The high-resistant substrate 200 is formed of an etch-resistant …
FIG. 24. Hereinafter, the pad conductive pattern 210a will be referred to as a pad l ayer 201a. The pad layer 210a is used for bonding the light-transmitting …
FIG. 25, the resultant structure on which the pad layer 201 a is formed is inverted such that the bottom of the high-resistant substrate 200 faces up. The …
FIG. 26, by etching the high-resistant substrate 200, a via hole 216 through which the bottom of the first compound semiconductor layer 202-is exposed is formed …
FIG. 27, a conductive layer 218 is formed on the bottom of the high-resistant substrate 200 in-which the via hole 216 is formed, and preferably, in contact …
FIG. 28, a first compound semiconductor layer 202, an active. layer 204, and a second compound semiconductor layer 206 are sequentially formed on a high- …
FIG. 29. Next, a via hole 216 is formed in the high-resistant substrate 200 so that the bottom of the first compound semiconductor layer 202 is exposed through …
FIG. 30, a mask pattern 226, which covers only a predetermined region of the high-resistant substrate 200 and exposes the remaining portion, is formed on the …
FIG. 31, as a result of etching to the bottom of the high-resistant substrate 200, but not the center region thereof, a high- resistant substrate pattern 200a …
FIGS. 33 and 34 are sectional views of Embodiment 4 for the method for fabricating a GaN based IlIl -V nitride semiconductor light-emitting device according to …
FIG. 34 is- formed on the bottom of the high-resistant substrate 200. The bottom of the high- resistant substrate 200, which is exposed through the mask …
FIG. 35 illustrates a process of sequentially forming material layers for lasing in a high-resistant substrate. [00101] In particular, referring to
FIG. 36, using the photosensitive pattern 316 as an etch mask, an.exposed region of the second compound semiconductor layer 314 is etched and then an exposed …
FIG. 37, a passivation layer 318 is formed over the cladding layer 312 having the ridge structure and patterned to expose a region, preferably the center, of …
FIG. 38, after forming the conductive layer 320, the resultant structure is inverted such that the bottom of the high-resistant 30 substrate 300 faces up. …
FIG. 39. After removing the mask pattern 322 (this removal of the mask pattern 322 is not necessary if the mask pattern 322 is a hard mask pattern such as a …
FIG. 40, a conductive layer 326 is formed on the bottom of the high- resistant substrate 300, and preferably the entire region of the high- resistance …
FIGS. 41 through 43 are sectional views illustrating a method for fabricating the G aN based I II -V nitride semiconductor laser diode shown in
FIG. 42. [00111] After removing the mask pattern 328, a conductive layer 330 is formed on the exposed region of the first compound semiconductor layer 302 to …
FIG. 43. The conductive layer 330 is used as an upper electrode. Because the sidewall of the high-resistant substrate pattern 300a has a positive slope, the …
FIG. 44 is a sectional view illustrating one common step in the manufacture of GaN based IlIl -V nitride semiconductor light-emitting devices according to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a light-emitting device, the method comprising: (a) sequentially forming a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, which are for inducing light emission, on a high-resistant substrate; (b) forming a light-transmitting conductive layer on the second compound semiconductor layer; (c) dry etching a region of the high-resistant substrate and the first compound semiconductor layer using a reaction gas comprising at least C 12 or BC 1 3 to expose a region of the first compound semiconductor layer; and (d) forming a light-shielding conductive layer to cover the exposed region of the first compound semiconductor layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based III-V nitride semiconductor light-emitting device
Materials described outside the worked examples.
first compound semiconductor layer
active layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12, a portion of the bottom of the first compound semiconductor layer 152 on which the substrate pattern 150 is not present may be etched by a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Conductivity | 0.5 W/cmK | sapphire substrate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,324,004Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a conventional light-emitting diode (LED) based on G aN based IlIl -V nitrides includes an n-type GaN layer 12 on a sapphire substrate 10. The n-type …
FIG. 2. R eference numeral 40 denotes a submount, reference numerals 42a and 42b denote pad layers, reference numerals 44a and 44b denote first and 3 second …
FIG. 3 is a sectional view of another conventional GaN based Ilil-V nitride semiconductor laser diode having a waveguide ridge, in which n-type and p-type …
FIG. 4 is a sectional view illustrating the semiconductor laser diode of
FIG. 5, reference numeral 50 denotes a light- transmitting conductive layer. The light-transmitting conductive layer 50 is used as a first electrode. A pad …
FIG. 6, a light-reflecting conductive layer 70 acting as a first electrode is formed on the second compound semiconductor layer 54. A light-transmitting …
FIG. 7,. a high-resistant substrate pattern 60a is present on the bottom of the first compound semiconductor layer 58. The high-resistant substrate pattern 60a …
FIG. 8, a conductive layer 70 acting as a first electrode is formed on the second compound semiconductor layer 54. The same high- resistant substrate pattern …
FIG. 9. The first via hole h3 extends past the surface of the first compound semiconductor layer 152 not to expose the bottom surface of the first compound …
FIG. 10, a first via hole h3 may be formed by extending the first dent h 1 to the first compound semiconductor layer 152 through the substrate 150. Although not …
FIG. 11, except that the second via hole h4 is formed in the substrate 150 to expose a portion of the second compound semiconductor layer 152 aligned with the …
FIG. 12, a portion of the bottom of the first compound semiconductor layer 152 on which the substrate pattern 150 is not present may be etched by a …
FIG. 13, except that no step exits on the bottom of the first compound semiconductor layer 152 because the bottom of the first compound semiconductor l ayer 152 …
FIG. 14 is the same as in Embodiment 9 shown in
FIG. 15. Also, the first compound semiconductor layer 152 shown in
FIG. 16 is the same as in Embodiment.11 shown in
FIG. 17, reference numeral 150 denotes a high-resistant substrate. The high-resistant substrate 150 is an etch-resistant sapphire substrate. Material layers …
FIG. 18 according to the present invention; and [0040]
FIG. 19, except that a second via hole h4 is formed in the substrate 150 to expose a portion of the bottom of the first compound semiconductor layer 152. An …
FIG. 21 is the same as in Embodiment 15 shown in
FIG. 22, a substrate 1 50 is biased to a side at the bottom of the first compound semiconductor layer 152 from the bottom center. An ohmic contact layer 180 is …
FIG. 23, a first compound semiconductor layer 202 is formed on a high-resistant substrate 200. The high-resistant substrate 200 is formed of an etch-resistant …
FIG. 24. Hereinafter, the pad conductive pattern 210a will be referred to as a pad l ayer 201a. The pad layer 210a is used for bonding the light-transmitting …
FIG. 25, the resultant structure on which the pad layer 201 a is formed is inverted such that the bottom of the high-resistant substrate 200 faces up. The …
FIG. 26, by etching the high-resistant substrate 200, a via hole 216 through which the bottom of the first compound semiconductor layer 202-is exposed is formed …
FIG. 27, a conductive layer 218 is formed on the bottom of the high-resistant substrate 200 in-which the via hole 216 is formed, and preferably, in contact …
FIG. 28, a first compound semiconductor layer 202, an active. layer 204, and a second compound semiconductor layer 206 are sequentially formed on a high- …
FIG. 29. Next, a via hole 216 is formed in the high-resistant substrate 200 so that the bottom of the first compound semiconductor layer 202 is exposed through …
FIG. 30, a mask pattern 226, which covers only a predetermined region of the high-resistant substrate 200 and exposes the remaining portion, is formed on the …
FIG. 31, as a result of etching to the bottom of the high-resistant substrate 200, but not the center region thereof, a high- resistant substrate pattern 200a …
FIGS. 33 and 34 are sectional views of Embodiment 4 for the method for fabricating a GaN based IlIl -V nitride semiconductor light-emitting device according to …
FIG. 34 is- formed on the bottom of the high-resistant substrate 200. The bottom of the high- resistant substrate 200, which is exposed through the mask …
FIG. 35 illustrates a process of sequentially forming material layers for lasing in a high-resistant substrate. [00101] In particular, referring to
FIG. 36, using the photosensitive pattern 316 as an etch mask, an.exposed region of the second compound semiconductor layer 314 is etched and then an exposed …
FIG. 37, a passivation layer 318 is formed over the cladding layer 312 having the ridge structure and patterned to expose a region, preferably the center, of …
FIG. 38, after forming the conductive layer 320, the resultant structure is inverted such that the bottom of the high-resistant 30 substrate 300 faces up. …
FIG. 39. After removing the mask pattern 322 (this removal of the mask pattern 322 is not necessary if the mask pattern 322 is a hard mask pattern such as a …
FIG. 40, a conductive layer 326 is formed on the bottom of the high- resistant substrate 300, and preferably the entire region of the high- resistance …
FIGS. 41 through 43 are sectional views illustrating a method for fabricating the G aN based I II -V nitride semiconductor laser diode shown in
FIG. 42. [00111] After removing the mask pattern 328, a conductive layer 330 is formed on the exposed region of the first compound semiconductor layer 302 to …
FIG. 43. The conductive layer 330 is used as an upper electrode. Because the sidewall of the high-resistant substrate pattern 300a has a positive slope, the …
FIG. 44 is a sectional view illustrating one common step in the manufacture of GaN based IlIl -V nitride semiconductor light-emitting devices according to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a light-emitting device, the method comprising: (a) sequentially forming a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, which are for inducing light emission, on a high-resistant substrate; (b) forming a light-transmitting conductive layer on the second compound semiconductor layer; (c) dry etching a region of the high-resistant substrate and the first compound semiconductor layer using a reaction gas comprising at least C 12 or BC 1 3 to expose a region of the first compound semiconductor layer; and (d) forming a light-shielding conductive layer to cover the exposed region of the first compound semiconductor layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based III-V nitride semiconductor light-emitting device
Materials described outside the worked examples.
first compound semiconductor layer
active layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12, a portion of the bottom of the first compound semiconductor layer 152 on which the substrate pattern 150 is not present may be etched by a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Conductivity | 0.5 W/cmK | sapphire substrate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,324,004Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a conventional light-emitting diode (LED) based on G aN based IlIl -V nitrides includes an n-type GaN layer 12 on a sapphire substrate 10. The n-type …
FIG. 2. R eference numeral 40 denotes a submount, reference numerals 42a and 42b denote pad layers, reference numerals 44a and 44b denote first and 3 second …
FIG. 3 is a sectional view of another conventional GaN based Ilil-V nitride semiconductor laser diode having a waveguide ridge, in which n-type and p-type …
FIG. 4 is a sectional view illustrating the semiconductor laser diode of
FIG. 5, reference numeral 50 denotes a light- transmitting conductive layer. The light-transmitting conductive layer 50 is used as a first electrode. A pad …
FIG. 6, a light-reflecting conductive layer 70 acting as a first electrode is formed on the second compound semiconductor layer 54. A light-transmitting …
FIG. 7,. a high-resistant substrate pattern 60a is present on the bottom of the first compound semiconductor layer 58. The high-resistant substrate pattern 60a …
FIG. 8, a conductive layer 70 acting as a first electrode is formed on the second compound semiconductor layer 54. The same high- resistant substrate pattern …
FIG. 9. The first via hole h3 extends past the surface of the first compound semiconductor layer 152 not to expose the bottom surface of the first compound …
FIG. 10, a first via hole h3 may be formed by extending the first dent h 1 to the first compound semiconductor layer 152 through the substrate 150. Although not …
FIG. 11, except that the second via hole h4 is formed in the substrate 150 to expose a portion of the second compound semiconductor layer 152 aligned with the …
FIG. 12, a portion of the bottom of the first compound semiconductor layer 152 on which the substrate pattern 150 is not present may be etched by a …
FIG. 13, except that no step exits on the bottom of the first compound semiconductor layer 152 because the bottom of the first compound semiconductor l ayer 152 …
FIG. 14 is the same as in Embodiment 9 shown in
FIG. 15. Also, the first compound semiconductor layer 152 shown in
FIG. 16 is the same as in Embodiment.11 shown in
FIG. 17, reference numeral 150 denotes a high-resistant substrate. The high-resistant substrate 150 is an etch-resistant sapphire substrate. Material layers …
FIG. 18 according to the present invention; and [0040]
FIG. 19, except that a second via hole h4 is formed in the substrate 150 to expose a portion of the bottom of the first compound semiconductor layer 152. An …
FIG. 21 is the same as in Embodiment 15 shown in
FIG. 22, a substrate 1 50 is biased to a side at the bottom of the first compound semiconductor layer 152 from the bottom center. An ohmic contact layer 180 is …
FIG. 23, a first compound semiconductor layer 202 is formed on a high-resistant substrate 200. The high-resistant substrate 200 is formed of an etch-resistant …
FIG. 24. Hereinafter, the pad conductive pattern 210a will be referred to as a pad l ayer 201a. The pad layer 210a is used for bonding the light-transmitting …
FIG. 25, the resultant structure on which the pad layer 201 a is formed is inverted such that the bottom of the high-resistant substrate 200 faces up. The …
FIG. 26, by etching the high-resistant substrate 200, a via hole 216 through which the bottom of the first compound semiconductor layer 202-is exposed is formed …
FIG. 27, a conductive layer 218 is formed on the bottom of the high-resistant substrate 200 in-which the via hole 216 is formed, and preferably, in contact …
FIG. 28, a first compound semiconductor layer 202, an active. layer 204, and a second compound semiconductor layer 206 are sequentially formed on a high- …
FIG. 29. Next, a via hole 216 is formed in the high-resistant substrate 200 so that the bottom of the first compound semiconductor layer 202 is exposed through …
FIG. 30, a mask pattern 226, which covers only a predetermined region of the high-resistant substrate 200 and exposes the remaining portion, is formed on the …
FIG. 31, as a result of etching to the bottom of the high-resistant substrate 200, but not the center region thereof, a high- resistant substrate pattern 200a …
FIGS. 33 and 34 are sectional views of Embodiment 4 for the method for fabricating a GaN based IlIl -V nitride semiconductor light-emitting device according to …
FIG. 34 is- formed on the bottom of the high-resistant substrate 200. The bottom of the high- resistant substrate 200, which is exposed through the mask …
FIG. 35 illustrates a process of sequentially forming material layers for lasing in a high-resistant substrate. [00101] In particular, referring to
FIG. 36, using the photosensitive pattern 316 as an etch mask, an.exposed region of the second compound semiconductor layer 314 is etched and then an exposed …
FIG. 37, a passivation layer 318 is formed over the cladding layer 312 having the ridge structure and patterned to expose a region, preferably the center, of …
FIG. 38, after forming the conductive layer 320, the resultant structure is inverted such that the bottom of the high-resistant 30 substrate 300 faces up. …
FIG. 39. After removing the mask pattern 322 (this removal of the mask pattern 322 is not necessary if the mask pattern 322 is a hard mask pattern such as a …
FIG. 40, a conductive layer 326 is formed on the bottom of the high- resistant substrate 300, and preferably the entire region of the high- resistance …
FIGS. 41 through 43 are sectional views illustrating a method for fabricating the G aN based I II -V nitride semiconductor laser diode shown in
FIG. 42. [00111] After removing the mask pattern 328, a conductive layer 330 is formed on the exposed region of the first compound semiconductor layer 302 to …
FIG. 43. The conductive layer 330 is used as an upper electrode. Because the sidewall of the high-resistant substrate pattern 300a has a positive slope, the …
FIG. 44 is a sectional view illustrating one common step in the manufacture of GaN based IlIl -V nitride semiconductor light-emitting devices according to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a light-emitting device, the method comprising: (a) sequentially forming a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, which are for inducing light emission, on a high-resistant substrate; (b) forming a light-transmitting conductive layer on the second compound semiconductor layer; (c) dry etching a region of the high-resistant substrate and the first compound semiconductor layer using a reaction gas comprising at least C 12 or BC 1 3 to expose a region of the first compound semiconductor layer; and (d) forming a light-shielding conductive layer to cover the exposed region of the first compound semiconductor layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based III-V nitride semiconductor light-emitting device
Materials described outside the worked examples.
first compound semiconductor layer
active layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12, a portion of the bottom of the first compound semiconductor layer 152 on which the substrate pattern 150 is not present may be etched by a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Conductivity | 0.5 W/cmK | sapphire substrate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,324,004Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a conventional light-emitting diode (LED) based on G aN based IlIl -V nitrides includes an n-type GaN layer 12 on a sapphire substrate 10. The n-type …
FIG. 2. R eference numeral 40 denotes a submount, reference numerals 42a and 42b denote pad layers, reference numerals 44a and 44b denote first and 3 second …
FIG. 3 is a sectional view of another conventional GaN based Ilil-V nitride semiconductor laser diode having a waveguide ridge, in which n-type and p-type …
FIG. 4 is a sectional view illustrating the semiconductor laser diode of
FIG. 5, reference numeral 50 denotes a light- transmitting conductive layer. The light-transmitting conductive layer 50 is used as a first electrode. A pad …
FIG. 6, a light-reflecting conductive layer 70 acting as a first electrode is formed on the second compound semiconductor layer 54. A light-transmitting …
FIG. 7,. a high-resistant substrate pattern 60a is present on the bottom of the first compound semiconductor layer 58. The high-resistant substrate pattern 60a …
FIG. 8, a conductive layer 70 acting as a first electrode is formed on the second compound semiconductor layer 54. The same high- resistant substrate pattern …
FIG. 9. The first via hole h3 extends past the surface of the first compound semiconductor layer 152 not to expose the bottom surface of the first compound …
FIG. 10, a first via hole h3 may be formed by extending the first dent h 1 to the first compound semiconductor layer 152 through the substrate 150. Although not …
FIG. 11, except that the second via hole h4 is formed in the substrate 150 to expose a portion of the second compound semiconductor layer 152 aligned with the …
FIG. 12, a portion of the bottom of the first compound semiconductor layer 152 on which the substrate pattern 150 is not present may be etched by a …
FIG. 13, except that no step exits on the bottom of the first compound semiconductor layer 152 because the bottom of the first compound semiconductor l ayer 152 …
FIG. 14 is the same as in Embodiment 9 shown in
FIG. 15. Also, the first compound semiconductor layer 152 shown in
FIG. 16 is the same as in Embodiment.11 shown in
FIG. 17, reference numeral 150 denotes a high-resistant substrate. The high-resistant substrate 150 is an etch-resistant sapphire substrate. Material layers …
FIG. 18 according to the present invention; and [0040]
FIG. 19, except that a second via hole h4 is formed in the substrate 150 to expose a portion of the bottom of the first compound semiconductor layer 152. An …
FIG. 21 is the same as in Embodiment 15 shown in
FIG. 22, a substrate 1 50 is biased to a side at the bottom of the first compound semiconductor layer 152 from the bottom center. An ohmic contact layer 180 is …
FIG. 23, a first compound semiconductor layer 202 is formed on a high-resistant substrate 200. The high-resistant substrate 200 is formed of an etch-resistant …
FIG. 24. Hereinafter, the pad conductive pattern 210a will be referred to as a pad l ayer 201a. The pad layer 210a is used for bonding the light-transmitting …
FIG. 25, the resultant structure on which the pad layer 201 a is formed is inverted such that the bottom of the high-resistant substrate 200 faces up. The …
FIG. 26, by etching the high-resistant substrate 200, a via hole 216 through which the bottom of the first compound semiconductor layer 202-is exposed is formed …
FIG. 27, a conductive layer 218 is formed on the bottom of the high-resistant substrate 200 in-which the via hole 216 is formed, and preferably, in contact …
FIG. 28, a first compound semiconductor layer 202, an active. layer 204, and a second compound semiconductor layer 206 are sequentially formed on a high- …
FIG. 29. Next, a via hole 216 is formed in the high-resistant substrate 200 so that the bottom of the first compound semiconductor layer 202 is exposed through …
FIG. 30, a mask pattern 226, which covers only a predetermined region of the high-resistant substrate 200 and exposes the remaining portion, is formed on the …
FIG. 31, as a result of etching to the bottom of the high-resistant substrate 200, but not the center region thereof, a high- resistant substrate pattern 200a …
FIGS. 33 and 34 are sectional views of Embodiment 4 for the method for fabricating a GaN based IlIl -V nitride semiconductor light-emitting device according to …
FIG. 34 is- formed on the bottom of the high-resistant substrate 200. The bottom of the high- resistant substrate 200, which is exposed through the mask …
FIG. 35 illustrates a process of sequentially forming material layers for lasing in a high-resistant substrate. [00101] In particular, referring to
FIG. 36, using the photosensitive pattern 316 as an etch mask, an.exposed region of the second compound semiconductor layer 314 is etched and then an exposed …
FIG. 37, a passivation layer 318 is formed over the cladding layer 312 having the ridge structure and patterned to expose a region, preferably the center, of …
FIG. 38, after forming the conductive layer 320, the resultant structure is inverted such that the bottom of the high-resistant 30 substrate 300 faces up. …
FIG. 39. After removing the mask pattern 322 (this removal of the mask pattern 322 is not necessary if the mask pattern 322 is a hard mask pattern such as a …
FIG. 40, a conductive layer 326 is formed on the bottom of the high- resistant substrate 300, and preferably the entire region of the high- resistance …
FIGS. 41 through 43 are sectional views illustrating a method for fabricating the G aN based I II -V nitride semiconductor laser diode shown in
FIG. 42. [00111] After removing the mask pattern 328, a conductive layer 330 is formed on the exposed region of the first compound semiconductor layer 302 to …
FIG. 43. The conductive layer 330 is used as an upper electrode. Because the sidewall of the high-resistant substrate pattern 300a has a positive slope, the …
FIG. 44 is a sectional view illustrating one common step in the manufacture of GaN based IlIl -V nitride semiconductor light-emitting devices according to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a light-emitting device, the method comprising: (a) sequentially forming a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, which are for inducing light emission, on a high-resistant substrate; (b) forming a light-transmitting conductive layer on the second compound semiconductor layer; (c) dry etching a region of the high-resistant substrate and the first compound semiconductor layer using a reaction gas comprising at least C 12 or BC 1 3 to expose a region of the first compound semiconductor layer; and (d) forming a light-shielding conductive layer to cover the exposed region of the first compound semiconductor layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based III-V nitride semiconductor light-emitting device
Materials described outside the worked examples.
first compound semiconductor layer
active layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12, a portion of the bottom of the first compound semiconductor layer 152 on which the substrate pattern 150 is not present may be etched by a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Conductivity | 0.5 W/cmK | sapphire substrate |
Related documents with shared materials, methods, properties, or citations.
second compound semiconductor layer
light-transmitting conductive layer
light-shielding conductive layer
high-resistant substrate
sapphire substrate
InxAlyGa₁-x-yN
Cl₂
BCl₃
FIG. 36, using the photosensitive pattern 316 as an etch mask, an.exposed region of the second compound semiconductor layer 314 is etched and then an exposed …
FIG. 43. The conductive layer 330 is used as an upper electrode. Because the sidewall of the high-resistant substrate pattern 300a has a positive slope, the …
second compound semiconductor layer
light-transmitting conductive layer
light-shielding conductive layer
high-resistant substrate
sapphire substrate
InxAlyGa₁-x-yN
Cl₂
BCl₃
FIG. 36, using the photosensitive pattern 316 as an etch mask, an.exposed region of the second compound semiconductor layer 314 is etched and then an exposed …
FIG. 43. The conductive layer 330 is used as an upper electrode. Because the sidewall of the high-resistant substrate pattern 300a has a positive slope, the …
second compound semiconductor layer
light-transmitting conductive layer
light-shielding conductive layer
high-resistant substrate
sapphire substrate
InxAlyGa₁-x-yN
Cl₂
BCl₃
FIG. 36, using the photosensitive pattern 316 as an etch mask, an.exposed region of the second compound semiconductor layer 314 is etched and then an exposed …
FIG. 43. The conductive layer 330 is used as an upper electrode. Because the sidewall of the high-resistant substrate pattern 300a has a positive slope, the …
second compound semiconductor layer
light-transmitting conductive layer
light-shielding conductive layer
high-resistant substrate
sapphire substrate
InxAlyGa₁-x-yN
Cl₂
BCl₃
FIG. 36, using the photosensitive pattern 316 as an etch mask, an.exposed region of the second compound semiconductor layer 314 is etched and then an exposed …
FIG. 43. The conductive layer 330 is used as an upper electrode. Because the sidewall of the high-resistant substrate pattern 300a has a positive slope, the …