Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 property2 figures
2 preparations3 characterizations1 property4 figures
2 preparations2 characterizations1 property2 figures
2 preparations2 characterizations1 property2 figures
2 preparations2 characterizations1 property2 figures
2 preparations3 characterizations1 property4 figures
2 preparations2 characterizations8 properties4 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations2 characterizations7 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Contact Angle | θc | 35deg | — | |||
| Contact Angle | θc | 49deg | — | |||
| Contact Angle | θc | 92deg | — | |||
| Contact Angle | θc | 61deg | — | |||
| Contact Angle | θc | 42deg | — | |||
| Contact Angle | θc | 69deg | — | |||
| Raman Peak | G | 1587.8cm⁻¹ | — | |||
| Raman Peak | 2D | 2679.3cm⁻¹ | — | |||
| Raman Peak | G | 1592.1cm⁻¹ | — | |||
| Raman Peak | 2D | 2681.1cm⁻¹ | — | |||
| Raman Peak | G | 1585cm⁻¹ | — | |||
| Raman Peak | 2D | 2678.7cm⁻¹ | — | |||
| Raman Peak | G | 1584.4cm⁻¹ | — | |||
| Raman Peak | 2D | 2679.1cm⁻¹ | — | |||
| Raman Peak | G | 1589.1cm⁻¹ | — | |||
| Raman Peak | 2D | 2680.6cm⁻¹ | — | |||
| Raman Peak | G | 1592.3cm⁻¹ | — | |||
| Raman Peak | 2D | 2684.5cm⁻¹ | — | |||
| Fet Threshold Voltage | VCNP | 379mV | — | |||
| Fet Threshold Voltage | VCNP | 379mV | — | |||
| Fet Sheet Resistance | Count | 79.3ohm/sq | — | |||
| Fet Mobility | µhole | 1.76x10³ cm²/Vs | — | |||
| Fet Mobility | µhole | 2.1x10³ cm²/Vs | — | |||
| Graphene Coverage | coverage after 12h KOH | 1% | — | |||
| Graphene Coverage | coverage after 12h KOH | 98% | — | |||
| Graphene Coverage | coverage after 12h acetic acid | 30% | — | |||
| Graphene Coverage | coverage after 12h acetic acid | 99% | — | |||
| Graphene Coverage | coverage after NMP | 3% | — | |||
| Graphene Coverage | coverage after NMP | 99% | — | |||
| Xps Binding Energy | C 1s | 284.7eV | — | — | ||
| Xps Binding Energy | C 1s | 285eV | — | — | ||
| Xps Binding Energy | C 1s | 286.3eV | — | — | ||
| Xps Binding Energy | C 1s | 288.3eV | — | — | ||
| Xps Binding Energy | C 1s | 289.3eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Low-frequency noise as a probe of microscopic disorder in CVD-grown graphene
Strain and doping transfer between suspended and supported bilayer graphene
Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature
Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals
Advancing Noise-Resilient Twist Angle Characterization in Bilayer Graphene through Raman Spectroscopy via GAN-CNN Modeling
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Micro-tip manipulated origami for robust twisted few-layer graphene
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Free Standing Epitaxial Oxides Through Remote Epitaxy: The Role of the Evolving Graphene Microstructure
Low Resistance P-Type Contacts to Monolayer WSe2 through Chlorinated Solvent Doping
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 property2 figures
2 preparations3 characterizations1 property4 figures
2 preparations2 characterizations1 property2 figures
2 preparations2 characterizations1 property2 figures
2 preparations2 characterizations1 property2 figures
2 preparations3 characterizations1 property4 figures
2 preparations2 characterizations8 properties4 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations2 characterizations7 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Contact Angle | θc | 35deg | — | |||
| Contact Angle | θc | 49deg | — | |||
| Contact Angle | θc | 92deg | — | |||
| Contact Angle | θc | 61deg | — | |||
| Contact Angle | θc | 42deg | — | |||
| Contact Angle | θc | 69deg | — | |||
| Raman Peak | G | 1587.8cm⁻¹ | — | |||
| Raman Peak | 2D | 2679.3cm⁻¹ | — | |||
| Raman Peak | G | 1592.1cm⁻¹ | — | |||
| Raman Peak | 2D | 2681.1cm⁻¹ | — | |||
| Raman Peak | G | 1585cm⁻¹ | — | |||
| Raman Peak | 2D | 2678.7cm⁻¹ | — | |||
| Raman Peak | G | 1584.4cm⁻¹ | — | |||
| Raman Peak | 2D | 2679.1cm⁻¹ | — | |||
| Raman Peak | G | 1589.1cm⁻¹ | — | |||
| Raman Peak | 2D | 2680.6cm⁻¹ | — | |||
| Raman Peak | G | 1592.3cm⁻¹ | — | |||
| Raman Peak | 2D | 2684.5cm⁻¹ | — | |||
| Fet Threshold Voltage | VCNP | 379mV | — | |||
| Fet Threshold Voltage | VCNP | 379mV | — | |||
| Fet Sheet Resistance | Count | 79.3ohm/sq | — | |||
| Fet Mobility | µhole | 1.76x10³ cm²/Vs | — | |||
| Fet Mobility | µhole | 2.1x10³ cm²/Vs | — | |||
| Graphene Coverage | coverage after 12h KOH | 1% | — | |||
| Graphene Coverage | coverage after 12h KOH | 98% | — | |||
| Graphene Coverage | coverage after 12h acetic acid | 30% | — | |||
| Graphene Coverage | coverage after 12h acetic acid | 99% | — | |||
| Graphene Coverage | coverage after NMP | 3% | — | |||
| Graphene Coverage | coverage after NMP | 99% | — | |||
| Xps Binding Energy | C 1s | 284.7eV | — | — | ||
| Xps Binding Energy | C 1s | 285eV | — | — | ||
| Xps Binding Energy | C 1s | 286.3eV | — | — | ||
| Xps Binding Energy | C 1s | 288.3eV | — | — | ||
| Xps Binding Energy | C 1s | 289.3eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Low-frequency noise as a probe of microscopic disorder in CVD-grown graphene
Strain and doping transfer between suspended and supported bilayer graphene
Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature
Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals
Advancing Noise-Resilient Twist Angle Characterization in Bilayer Graphene through Raman Spectroscopy via GAN-CNN Modeling
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Micro-tip manipulated origami for robust twisted few-layer graphene
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Free Standing Epitaxial Oxides Through Remote Epitaxy: The Role of the Evolving Graphene Microstructure
Low Resistance P-Type Contacts to Monolayer WSe2 through Chlorinated Solvent Doping
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 property2 figures
2 preparations3 characterizations1 property4 figures
2 preparations2 characterizations1 property2 figures
2 preparations2 characterizations1 property2 figures
2 preparations2 characterizations1 property2 figures
2 preparations3 characterizations1 property4 figures
2 preparations2 characterizations8 properties4 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations2 characterizations7 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Contact Angle | θc | 35deg | — | |||
| Contact Angle | θc | 49deg | — | |||
| Contact Angle | θc | 92deg | — | |||
| Contact Angle | θc | 61deg | — | |||
| Contact Angle | θc | 42deg | — | |||
| Contact Angle | θc | 69deg | — | |||
| Raman Peak | G | 1587.8cm⁻¹ | — | |||
| Raman Peak | 2D | 2679.3cm⁻¹ | — | |||
| Raman Peak | G | 1592.1cm⁻¹ | — | |||
| Raman Peak | 2D | 2681.1cm⁻¹ | — | |||
| Raman Peak | G | 1585cm⁻¹ | — | |||
| Raman Peak | 2D | 2678.7cm⁻¹ | — | |||
| Raman Peak | G | 1584.4cm⁻¹ | — | |||
| Raman Peak | 2D | 2679.1cm⁻¹ | — | |||
| Raman Peak | G | 1589.1cm⁻¹ | — | |||
| Raman Peak | 2D | 2680.6cm⁻¹ | — | |||
| Raman Peak | G | 1592.3cm⁻¹ | — | |||
| Raman Peak | 2D | 2684.5cm⁻¹ | — | |||
| Fet Threshold Voltage | VCNP | 379mV | — | |||
| Fet Threshold Voltage | VCNP | 379mV | — | |||
| Fet Sheet Resistance | Count | 79.3ohm/sq | — | |||
| Fet Mobility | µhole | 1.76x10³ cm²/Vs | — | |||
| Fet Mobility | µhole | 2.1x10³ cm²/Vs | — | |||
| Graphene Coverage | coverage after 12h KOH | 1% | — | |||
| Graphene Coverage | coverage after 12h KOH | 98% | — | |||
| Graphene Coverage | coverage after 12h acetic acid | 30% | — | |||
| Graphene Coverage | coverage after 12h acetic acid | 99% | — | |||
| Graphene Coverage | coverage after NMP | 3% | — | |||
| Graphene Coverage | coverage after NMP | 99% | — | |||
| Xps Binding Energy | C 1s | 284.7eV | — | — | ||
| Xps Binding Energy | C 1s | 285eV | — | — | ||
| Xps Binding Energy | C 1s | 286.3eV | — | — | ||
| Xps Binding Energy | C 1s | 288.3eV | — | — | ||
| Xps Binding Energy | C 1s | 289.3eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Low-frequency noise as a probe of microscopic disorder in CVD-grown graphene
Strain and doping transfer between suspended and supported bilayer graphene
Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature
Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals
Advancing Noise-Resilient Twist Angle Characterization in Bilayer Graphene through Raman Spectroscopy via GAN-CNN Modeling
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Micro-tip manipulated origami for robust twisted few-layer graphene
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Free Standing Epitaxial Oxides Through Remote Epitaxy: The Role of the Evolving Graphene Microstructure
Low Resistance P-Type Contacts to Monolayer WSe2 through Chlorinated Solvent Doping
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 property2 figures
2 preparations3 characterizations1 property4 figures
2 preparations2 characterizations1 property2 figures
2 preparations2 characterizations1 property2 figures
2 preparations2 characterizations1 property2 figures
2 preparations3 characterizations1 property4 figures
2 preparations2 characterizations8 properties4 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations1 characterization2 properties3 figures
2 preparations2 characterizations7 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Contact Angle | θc | 35deg | — | |||
| Contact Angle | θc | 49deg | — | |||
| Contact Angle | θc | 92deg | — | |||
| Contact Angle | θc | 61deg | — | |||
| Contact Angle | θc | 42deg | — | |||
| Contact Angle | θc | 69deg | — | |||
| Raman Peak | G | 1587.8cm⁻¹ | — | |||
| Raman Peak | 2D | 2679.3cm⁻¹ | — | |||
| Raman Peak | G | 1592.1cm⁻¹ | — | |||
| Raman Peak | 2D | 2681.1cm⁻¹ | — | |||
| Raman Peak | G | 1585cm⁻¹ | — | |||
| Raman Peak | 2D | 2678.7cm⁻¹ | — | |||
| Raman Peak | G | 1584.4cm⁻¹ | — | |||
| Raman Peak | 2D | 2679.1cm⁻¹ | — | |||
| Raman Peak | G | 1589.1cm⁻¹ | — | |||
| Raman Peak | 2D | 2680.6cm⁻¹ | — | |||
| Raman Peak | G | 1592.3cm⁻¹ | — | |||
| Raman Peak | 2D | 2684.5cm⁻¹ | — | |||
| Fet Threshold Voltage | VCNP | 379mV | — | |||
| Fet Threshold Voltage | VCNP | 379mV | — | |||
| Fet Sheet Resistance | Count | 79.3ohm/sq | — | |||
| Fet Mobility | µhole | 1.76x10³ cm²/Vs | — | |||
| Fet Mobility | µhole | 2.1x10³ cm²/Vs | — | |||
| Graphene Coverage | coverage after 12h KOH | 1% | — | |||
| Graphene Coverage | coverage after 12h KOH | 98% | — | |||
| Graphene Coverage | coverage after 12h acetic acid | 30% | — | |||
| Graphene Coverage | coverage after 12h acetic acid | 99% | — | |||
| Graphene Coverage | coverage after NMP | 3% | — | |||
| Graphene Coverage | coverage after NMP | 99% | — | |||
| Xps Binding Energy | C 1s | 284.7eV | — | — | ||
| Xps Binding Energy | C 1s | 285eV | — | — | ||
| Xps Binding Energy | C 1s | 286.3eV | — | — | ||
| Xps Binding Energy | C 1s | 288.3eV | — | — | ||
| Xps Binding Energy | C 1s | 289.3eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Low-frequency noise as a probe of microscopic disorder in CVD-grown graphene
Strain and doping transfer between suspended and supported bilayer graphene
Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature
Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals
Advancing Noise-Resilient Twist Angle Characterization in Bilayer Graphene through Raman Spectroscopy via GAN-CNN Modeling
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Micro-tip manipulated origami for robust twisted few-layer graphene
Selenization of V2O5/WO3 Bilayers for Tuned Optoelectronic Response of WSe2 Films
Free Standing Epitaxial Oxides Through Remote Epitaxy: The Role of the Evolving Graphene Microstructure
Low Resistance P-Type Contacts to Monolayer WSe2 through Chlorinated Solvent Doping