Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation

Alexandra Becker; Genrich Zeller; Holger Lippold; Ismail Eren; Lara Rkaya Müller; Paul Chekhonin; Agnieszka Beata Kuc; Magnus Schlösser; Cornelius Fischer

doi:10.14278/rodare.3733

Paper

Atlas literature

Research paper

Experimental CharacterizationComputational MD

Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation

Alexandra Becker, Genrich Zeller, Holger Lippold, Ismail Eren et al.

2024·10.14278/rodare.3733·arXiv:2506.20304

Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation | Matter42 Literature

Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation

Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation

Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation

Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation

Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation

Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation

Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation

Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation

Samples

Monolayer graphene transferred onto a Si/SiO₂ substrate for tritium exposure and electron irradiation experiments.

Graphene sample irradiated in SEM with 5.7 keV electrons for 1.00 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 2.02 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 2.68 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 4.05 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 22.89 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 45.78 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 68.68 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 91.57 h.

Graphene bombarded with tritium atoms in molecular dynamics simulations using the AIREBO potential; used to study defect formation and tritium interaction.

Why these are connected

Samples

Monolayer graphene transferred onto a Si/SiO₂ substrate for tritium exposure and electron irradiation experiments.

Graphene sample irradiated in SEM with 5.7 keV electrons for 1.00 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 2.02 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 2.68 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 4.05 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 22.89 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 45.78 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 68.68 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 91.57 h.

Graphene bombarded with tritium atoms in molecular dynamics simulations using the AIREBO potential; used to study defect formation and tritium interaction.

Why these are connected

Samples

Monolayer graphene transferred onto a Si/SiO₂ substrate for tritium exposure and electron irradiation experiments.

Graphene sample irradiated in SEM with 5.7 keV electrons for 1.00 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 2.02 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 2.68 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 4.05 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 22.89 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 45.78 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 68.68 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 91.57 h.

Graphene bombarded with tritium atoms in molecular dynamics simulations using the AIREBO potential; used to study defect formation and tritium interaction.

Why these are connected

Samples

Monolayer graphene transferred onto a Si/SiO₂ substrate for tritium exposure and electron irradiation experiments.

Graphene sample irradiated in SEM with 5.7 keV electrons for 1.00 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 2.02 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 2.68 h.

Graphene sample irradiated in SEM with 5.7 keV electrons for 4.05 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 22.89 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 45.78 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 68.68 h.

Graphene sample exposed to gaseous tritium at room temperature and 100 mbar for 91.57 h.

Graphene bombarded with tritium atoms in molecular dynamics simulations using the AIREBO potential; used to study defect formation and tritium interaction.

Why these are connected