Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature

Rafael O. Cunha; Yunier Garcia-Basabe; Dunieskys G. Larrude; Matheus Gamino; Erika N. Lima; Felipe Crasto de Lima; Adalberto Fazzio; Sergio M. Rezende; Antonio Azevedo; Joaquim B. S. Mendes

doi:10.48550/arxiv.2405.18617

Paper details

Research paper

Experimental CharacterizationComputational DFT

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS₂ Heterostructures at Room Temperature

Rafael O. Cunha, Yunier Garcia-Basabe, Dunieskys G. Larrude, Matheus Gamino et al.

2025

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single-layer graphene transferred onto Si/SiO₂ wafer.

1 characterization1 figure

ExperimentalCStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Graphene/WS₂ heterostructure prepared by transferring graphene onto Si/SiO₂ followed by spin-coated WS₂ nanoflakes.

1 preparation4 characterizations13 properties3 figures

ExperimentalCStudied MaterialWS₂Studied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

SLG film with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

1 preparation1 characterization1 property2 figures

ExperimentalCStudied MaterialNi₈₁Fe₁₉Capping Or ContactTiCapping Or ContactAuCapping Or Contact

SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

1 preparation1 characterization2 properties2 figures

ExperimentalCStudied MaterialWS₂Studied MaterialNi₈₁Fe₁₉Capping Or ContactTiCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric

WS₂ sample deposited directly on SiO₂ substrate for comparison in charge-transfer analysis.

No measurements recorded

ExperimentalWS₂Studied MaterialSiO₂Substrate / Dielectric

Materials

graphene

Studied Material

Also known as

SLG

Variables

layer_state= single layer

studied material

WS₂

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Afm Roughness	surface roughness	4.3nm	C WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Afm Thickness	WS₂ thickness range	5.5-12nm	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Raman Peak	E2g1	357cm⁻¹	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Raman Peak	Ag₁	423cm⁻¹	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Transport Resistance	SLG film resistance	2200ohm	C	SLG film with 12 nm permalloy island and Ti/Au contact strip	—
Transport Resistance	SLG/WS₂ heterostructure resistance	248ohm	C WS₂	SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/A	—
Spin To Charge Conversion Efficiency	IREE efficiency	enhanced	C WS₂	SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/A	—
Xps Binding Energy	S 2p3/2	162.6eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	S 2p3/2	1.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	S 2p1/2	163.7eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	S 2p1/2	1.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f7/2	32.6eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	W 4f7/2	2.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f5/2	34.7eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	W 4f5/2	2.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f7/2	35.8eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—

Properties

Type	Label	Value	Material	Sample	Source
Afm Roughness	surface roughness	4.3nm	C WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Afm Thickness	WS₂ thickness range	5.5-12nm	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Raman Peak	E2g1	357cm⁻¹	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Raman Peak	Ag₁	423cm⁻¹	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Transport Resistance	SLG film resistance	2200ohm	C	SLG film with 12 nm permalloy island and Ti/Au contact strip	—
Transport Resistance	SLG/WS₂ heterostructure resistance	248ohm	C WS₂	SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/A	—
Spin To Charge Conversion Efficiency	IREE efficiency	enhanced	C WS₂	SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/A	—
Xps Binding Energy	S 2p3/2	162.6eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	S 2p3/2	1.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	S 2p1/2	163.7eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	S 2p1/2	1.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f7/2	32.6eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	W 4f7/2	2.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f5/2	34.7eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	W 4f5/2	2.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f7/2	35.8eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—

Properties

Type	Label	Value	Material	Sample	Source
Afm Roughness	surface roughness	4.3nm	C WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Afm Thickness	WS₂ thickness range	5.5-12nm	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Raman Peak	E2g1	357cm⁻¹	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Raman Peak	Ag₁	423cm⁻¹	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Transport Resistance	SLG film resistance	2200ohm	C	SLG film with 12 nm permalloy island and Ti/Au contact strip	—
Transport Resistance	SLG/WS₂ heterostructure resistance	248ohm	C WS₂	SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/A	—
Spin To Charge Conversion Efficiency	IREE efficiency	enhanced	C WS₂	SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/A	—
Xps Binding Energy	S 2p3/2	162.6eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	S 2p3/2	1.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	S 2p1/2	163.7eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	S 2p1/2	1.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f7/2	32.6eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	W 4f7/2	2.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f5/2	34.7eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	W 4f5/2	2.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f7/2	35.8eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—

Properties

Type	Label	Value	Material	Sample	Source
Afm Roughness	surface roughness	4.3nm	C WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Afm Thickness	WS₂ thickness range	5.5-12nm	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Raman Peak	E2g1	357cm⁻¹	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Raman Peak	Ag₁	423cm⁻¹	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Transport Resistance	SLG film resistance	2200ohm	C	SLG film with 12 nm permalloy island and Ti/Au contact strip	—
Transport Resistance	SLG/WS₂ heterostructure resistance	248ohm	C WS₂	SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/A	—
Spin To Charge Conversion Efficiency	IREE efficiency	enhanced	C WS₂	SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/A	—
Xps Binding Energy	S 2p3/2	162.6eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	S 2p3/2	1.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	S 2p1/2	163.7eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	S 2p1/2	1.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f7/2	32.6eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	W 4f7/2	2.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f5/2	34.7eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Spin Orbit Splitting	W 4f5/2	2.1eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—
Xps Binding Energy	W 4f7/2	35.8eV	WS₂	Graphene/WS₂ heterostructure prepared by transferring graphe	—

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS₂ Heterostructures at Room Temperature

Samples

Single-layer graphene transferred onto Si/SiO₂ wafer.

Graphene/WS₂ heterostructure prepared by transferring graphene onto Si/SiO₂ followed by spin-coated WS₂ nanoflakes.

SLG film with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

WS₂ sample deposited directly on SiO₂ substrate for comparison in charge-transfer analysis.

Materials

Why these are connected

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS₂ Heterostructures at Room Temperature

Samples

Single-layer graphene transferred onto Si/SiO₂ wafer.

Graphene/WS₂ heterostructure prepared by transferring graphene onto Si/SiO₂ followed by spin-coated WS₂ nanoflakes.

SLG film with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

WS₂ sample deposited directly on SiO₂ substrate for comparison in charge-transfer analysis.

Materials

Why these are connected

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS₂ Heterostructures at Room Temperature

Samples

Single-layer graphene transferred onto Si/SiO₂ wafer.

Graphene/WS₂ heterostructure prepared by transferring graphene onto Si/SiO₂ followed by spin-coated WS₂ nanoflakes.

SLG film with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

WS₂ sample deposited directly on SiO₂ substrate for comparison in charge-transfer analysis.

Materials

Why these are connected

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS₂ Heterostructures at Room Temperature

Samples

Single-layer graphene transferred onto Si/SiO₂ wafer.

Graphene/WS₂ heterostructure prepared by transferring graphene onto Si/SiO₂ followed by spin-coated WS₂ nanoflakes.

SLG film with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

WS₂ sample deposited directly on SiO₂ substrate for comparison in charge-transfer analysis.

Materials

Why these are connected

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS₂ Heterostructures at Room Temperature

Samples

Single-layer graphene transferred onto Si/SiO₂ wafer.

Graphene/WS₂ heterostructure prepared by transferring graphene onto Si/SiO₂ followed by spin-coated WS₂ nanoflakes.

SLG film with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

WS₂ sample deposited directly on SiO₂ substrate for comparison in charge-transfer analysis.

Materials

Why these are connected

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS₂ Heterostructures at Room Temperature

Samples

Single-layer graphene transferred onto Si/SiO₂ wafer.

Graphene/WS₂ heterostructure prepared by transferring graphene onto Si/SiO₂ followed by spin-coated WS₂ nanoflakes.

SLG film with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

WS₂ sample deposited directly on SiO₂ substrate for comparison in charge-transfer analysis.

Materials

Why these are connected

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS₂ Heterostructures at Room Temperature

Samples

Single-layer graphene transferred onto Si/SiO₂ wafer.

Graphene/WS₂ heterostructure prepared by transferring graphene onto Si/SiO₂ followed by spin-coated WS₂ nanoflakes.

SLG film with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

WS₂ sample deposited directly on SiO₂ substrate for comparison in charge-transfer analysis.

Materials

Why these are connected

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS₂ Heterostructures at Room Temperature

Samples

Single-layer graphene transferred onto Si/SiO₂ wafer.

Graphene/WS₂ heterostructure prepared by transferring graphene onto Si/SiO₂ followed by spin-coated WS₂ nanoflakes.

SLG film with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

SLG/WS₂ heterostructure with 12 nm permalloy island and Ti/Au contact strips for spin-pumping measurements.

WS₂ sample deposited directly on SiO₂ substrate for comparison in charge-transfer analysis.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations