Research paper
Experimental CharacterizationOther ComputationalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization11 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Classification Accuracy | GAN-CNN test accuracy | 1 | — | |||
| Classification Recall | GAN-CNN test recall | 1 | — | |||
| Classification Precision | GAN-CNN test precision | 1 | — | |||
| Classification Accuracy | GAN-CNN 10-fold cross-validation accuracy | 0.998 | — | |||
| Classification Accuracy | CNN test accuracy | 0.943 | — | |||
| Classification Accuracy | ANN test accuracy | 0.906 | — | |||
| Classification Accuracy | RF test accuracy | 0.941 | — | |||
| Classification Accuracy | SVM test accuracy | 0.925 | — | |||
| Classification Accuracy | KNN test accuracy | 0.943 | — | |||
| Classification Accuracy | DT test accuracy | 0.906 | — | |||
| Classification Accuracy | LR test accuracy | 0.906 | — | |||
| Raman Peak | regex-detected Raman peak | 1200cm⁻¹ | — | — | — | |
| Raman Peak | regex-detected Raman peak | 3000cm⁻¹ | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation
Strain and doping transfer between suspended and supported bilayer graphene
Low-frequency noise as a probe of microscopic disorder in CVD-grown graphene
Dielectric control of ultrafast carrier dynamics and transport in graphene
Tuning Terahertz Optomechanics of MoS2 Bilayers with Homogeneous in-plane Strain
Micro-tip manipulated origami for robust twisted few-layer graphene
Second-Order Raman Scattering in Exfoliated Black Phosphorus
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Frequency as a Clock: Synchronization and Intrinsic Recovery in Graphene Transistor Dynamics
Wafer-scale robust graphene electronics under industrial processing conditions
In-plane staging in lithium-ion intercalation of bilayer graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization11 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Classification Accuracy | GAN-CNN test accuracy | 1 | — | |||
| Classification Recall | GAN-CNN test recall | 1 | — | |||
| Classification Precision | GAN-CNN test precision | 1 | — | |||
| Classification Accuracy | GAN-CNN 10-fold cross-validation accuracy | 0.998 | — | |||
| Classification Accuracy | CNN test accuracy | 0.943 | — | |||
| Classification Accuracy | ANN test accuracy | 0.906 | — | |||
| Classification Accuracy | RF test accuracy | 0.941 | — | |||
| Classification Accuracy | SVM test accuracy | 0.925 | — | |||
| Classification Accuracy | KNN test accuracy | 0.943 | — | |||
| Classification Accuracy | DT test accuracy | 0.906 | — | |||
| Classification Accuracy | LR test accuracy | 0.906 | — | |||
| Raman Peak | regex-detected Raman peak | 1200cm⁻¹ | — | — | — | |
| Raman Peak | regex-detected Raman peak | 3000cm⁻¹ | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation
Strain and doping transfer between suspended and supported bilayer graphene
Low-frequency noise as a probe of microscopic disorder in CVD-grown graphene
Dielectric control of ultrafast carrier dynamics and transport in graphene
Tuning Terahertz Optomechanics of MoS2 Bilayers with Homogeneous in-plane Strain
Micro-tip manipulated origami for robust twisted few-layer graphene
Second-Order Raman Scattering in Exfoliated Black Phosphorus
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Frequency as a Clock: Synchronization and Intrinsic Recovery in Graphene Transistor Dynamics
Wafer-scale robust graphene electronics under industrial processing conditions
In-plane staging in lithium-ion intercalation of bilayer graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization11 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Classification Accuracy | GAN-CNN test accuracy | 1 | — | |||
| Classification Recall | GAN-CNN test recall | 1 | — | |||
| Classification Precision | GAN-CNN test precision | 1 | — | |||
| Classification Accuracy | GAN-CNN 10-fold cross-validation accuracy | 0.998 | — | |||
| Classification Accuracy | CNN test accuracy | 0.943 | — | |||
| Classification Accuracy | ANN test accuracy | 0.906 | — | |||
| Classification Accuracy | RF test accuracy | 0.941 | — | |||
| Classification Accuracy | SVM test accuracy | 0.925 | — | |||
| Classification Accuracy | KNN test accuracy | 0.943 | — | |||
| Classification Accuracy | DT test accuracy | 0.906 | — | |||
| Classification Accuracy | LR test accuracy | 0.906 | — | |||
| Raman Peak | regex-detected Raman peak | 1200cm⁻¹ | — | — | — | |
| Raman Peak | regex-detected Raman peak | 3000cm⁻¹ | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation
Strain and doping transfer between suspended and supported bilayer graphene
Low-frequency noise as a probe of microscopic disorder in CVD-grown graphene
Dielectric control of ultrafast carrier dynamics and transport in graphene
Tuning Terahertz Optomechanics of MoS2 Bilayers with Homogeneous in-plane Strain
Micro-tip manipulated origami for robust twisted few-layer graphene
Second-Order Raman Scattering in Exfoliated Black Phosphorus
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Frequency as a Clock: Synchronization and Intrinsic Recovery in Graphene Transistor Dynamics
Wafer-scale robust graphene electronics under industrial processing conditions
In-plane staging in lithium-ion intercalation of bilayer graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization11 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Classification Accuracy | GAN-CNN test accuracy | 1 | — | |||
| Classification Recall | GAN-CNN test recall | 1 | — | |||
| Classification Precision | GAN-CNN test precision | 1 | — | |||
| Classification Accuracy | GAN-CNN 10-fold cross-validation accuracy | 0.998 | — | |||
| Classification Accuracy | CNN test accuracy | 0.943 | — | |||
| Classification Accuracy | ANN test accuracy | 0.906 | — | |||
| Classification Accuracy | RF test accuracy | 0.941 | — | |||
| Classification Accuracy | SVM test accuracy | 0.925 | — | |||
| Classification Accuracy | KNN test accuracy | 0.943 | — | |||
| Classification Accuracy | DT test accuracy | 0.906 | — | |||
| Classification Accuracy | LR test accuracy | 0.906 | — | |||
| Raman Peak | regex-detected Raman peak | 1200cm⁻¹ | — | — | — | |
| Raman Peak | regex-detected Raman peak | 3000cm⁻¹ | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Graphene structure modification under tritium exposure: 3H chemisorption dominates over defect formation by β-radiation
Strain and doping transfer between suspended and supported bilayer graphene
Low-frequency noise as a probe of microscopic disorder in CVD-grown graphene
Dielectric control of ultrafast carrier dynamics and transport in graphene
Tuning Terahertz Optomechanics of MoS2 Bilayers with Homogeneous in-plane Strain
Micro-tip manipulated origami for robust twisted few-layer graphene
Second-Order Raman Scattering in Exfoliated Black Phosphorus
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Frequency as a Clock: Synchronization and Intrinsic Recovery in Graphene Transistor Dynamics
Wafer-scale robust graphene electronics under industrial processing conditions
In-plane staging in lithium-ion intercalation of bilayer graphene