Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Marek Kostka; Jindřich Mach; Miroslav Bartošík; David Nezval; Martin Konečný; Vojtěch Mikerásek; Linda Supalová; Jakub Piastek; Tomáš Šikola

doi:10.5281/zenodo.15343762

Research paper

Experimental GrowthExperimental Characterization

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Marek Kostka, Jindřich Mach, Miroslav Bartošík, David Nezval et al.

2025·10.5281/zenodo.15343762·arXiv:2504.18172

Research paper

Experimental GrowthExperimental Characterization

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Marek Kostka, Jindřich Mach, Miroslav Bartošík, David Nezval et al.

2025·10.5281/zenodo.15343762·arXiv:2504.18172

Research paper

Experimental GrowthExperimental Characterization

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Marek Kostka, Jindřich Mach, Miroslav Bartošík, David Nezval et al.

2025·10.5281/zenodo.15343762·arXiv:2504.18172

Research paper

Experimental GrowthExperimental Characterization

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Marek Kostka, Jindřich Mach, Miroslav Bartošík, David Nezval et al.

2025·10.5281/zenodo.15343762·arXiv:2504.18172

Research paper

Experimental GrowthExperimental Characterization

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Marek Kostka, Jindřich Mach, Miroslav Bartošík, David Nezval et al.

2025·10.5281/zenodo.15343762·arXiv:2504.18172

Research paper

Experimental GrowthExperimental Characterization

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Marek Kostka, Jindřich Mach, Miroslav Bartošík, David Nezval et al.

2025·10.5281/zenodo.15343762·arXiv:2504.18172

Research paper

Experimental GrowthExperimental Characterization

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Marek Kostka, Jindřich Mach, Miroslav Bartošík, David Nezval et al.

2025·10.5281/zenodo.15343762·arXiv:2504.18172

Research paper

Experimental GrowthExperimental Characterization

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Marek Kostka, Jindřich Mach, Miroslav Bartošík, David Nezval et al.

2025·10.5281/zenodo.15343762·arXiv:2504.18172

GaN nanocrystals grown on CVD graphene transferred onto 280 nm SiO₂/Si(100).

2 preparations4 characterizations10 properties3 figures

ExperimentalGaNStudied MaterialCStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without graphene.

1 preparation2 characterizations2 properties2 figures

ExperimentalGaNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

GaN nanocrystals grown on CVD graphene transferred onto 280 nm SiO₂/Si(100).

2 preparations4 characterizations10 properties3 figures

ExperimentalGaNStudied MaterialCStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without graphene.

1 preparation2 characterizations2 properties2 figures

ExperimentalGaNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

GaN nanocrystals grown on CVD graphene transferred onto 280 nm SiO₂/Si(100).

2 preparations4 characterizations10 properties3 figures

ExperimentalGaNStudied MaterialCStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without graphene.

1 preparation2 characterizations2 properties2 figures

ExperimentalGaNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

GaN nanocrystals grown on CVD graphene transferred onto 280 nm SiO₂/Si(100).

2 preparations4 characterizations10 properties3 figures

ExperimentalGaNStudied MaterialCStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without graphene.

1 preparation2 characterizations2 properties2 figures

ExperimentalGaNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	A₁(LO)	740cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	1st overtone nA₁(LO)	735cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	2nd overtone nA₁(LO)	1462cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	3rd overtone nA₁(LO)	2191cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	4th overtone nA₁(LO)	2916cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	D	1350cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	G	1590cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	2D	2700cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	Si substrate peak	525cm⁻¹	Si	GaN nanocrystals grown on CVD graphene transferred onto 280 GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without g		—
Raman Peak	Si substrate peak	990cm⁻¹	Si	GaN nanocrystals grown on CVD graphene transferred onto 280 GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without g		—
Ir Band Shift	band shift	5cm⁻¹	—	—	—	—
Optical Band Gap	band gap	3.4eV	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	A₁(LO)	740cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	1st overtone nA₁(LO)	735cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	2nd overtone nA₁(LO)	1462cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	3rd overtone nA₁(LO)	2191cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	4th overtone nA₁(LO)	2916cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	D	1350cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	G	1590cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	2D	2700cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	Si substrate peak	525cm⁻¹	Si	GaN nanocrystals grown on CVD graphene transferred onto 280 GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without g		—
Raman Peak	Si substrate peak	990cm⁻¹	Si	GaN nanocrystals grown on CVD graphene transferred onto 280 GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without g		—
Ir Band Shift	band shift	5cm⁻¹	—	—	—	—
Optical Band Gap	band gap	3.4eV	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	A₁(LO)	740cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	1st overtone nA₁(LO)	735cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	2nd overtone nA₁(LO)	1462cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	3rd overtone nA₁(LO)	2191cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	4th overtone nA₁(LO)	2916cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	D	1350cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	G	1590cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	2D	2700cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	Si substrate peak	525cm⁻¹	Si	GaN nanocrystals grown on CVD graphene transferred onto 280 GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without g		—
Raman Peak	Si substrate peak	990cm⁻¹	Si	GaN nanocrystals grown on CVD graphene transferred onto 280 GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without g		—
Ir Band Shift	band shift	5cm⁻¹	—	—	—	—
Optical Band Gap	band gap	3.4eV	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	A₁(LO)	740cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	1st overtone nA₁(LO)	735cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	2nd overtone nA₁(LO)	1462cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	3rd overtone nA₁(LO)	2191cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	4th overtone nA₁(LO)	2916cm⁻¹	GaN	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	D	1350cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	G	1590cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	2D	2700cm⁻¹	C	GaN nanocrystals grown on CVD graphene transferred onto 280		—
Raman Peak	Si substrate peak	525cm⁻¹	Si	GaN nanocrystals grown on CVD graphene transferred onto 280 GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without g		—
Raman Peak	Si substrate peak	990cm⁻¹	Si	GaN nanocrystals grown on CVD graphene transferred onto 280 GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without g		—
Ir Band Shift	band shift	5cm⁻¹	—	—	—	—
Optical Band Gap	band gap	3.4eV	—	—	—	—

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Why these are connected

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Why these are connected

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Why these are connected

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Why these are connected

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Why these are connected

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Why these are connected

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Why these are connected

Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals

Why these are connected

Samples

GaN nanocrystals grown on CVD graphene transferred onto 280 nm SiO₂/Si(100).

GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without graphene.

Materials

Growth

Processing

Characterization

Properties

Samples

GaN nanocrystals grown on CVD graphene transferred onto 280 nm SiO₂/Si(100).

GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without graphene.

Materials

Growth

Processing

Characterization

Properties

Samples

GaN nanocrystals grown on CVD graphene transferred onto 280 nm SiO₂/Si(100).

GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without graphene.

Materials

Growth

Processing

Characterization

Properties

Samples

GaN nanocrystals grown on CVD graphene transferred onto 280 nm SiO₂/Si(100).

GaN nanocrystals grown on bare 280 nm SiO₂/Si(100) without graphene.

Materials

Growth

Processing

Characterization

Properties