Low Resistance P-Type Contacts to Monolayer WSe2 through Chlorinated Solvent Doping

Lauren Hoang; Robert K.A. Bennett; Anh Tuan Hoang; Tara Pena; Zhepeng Zhang; Marisa Hocking; Ashley P. Saunders; Fang Liu; Eric Pop; Andrew J. Mannix

doi:10.48550/arxiv.2504.21102

Paper details

Research paper

Experimental CharacterizationComputational DFT

Low Resistance P-Type Contacts to Monolayer WSe₂ through Chlorinated Solvent Doping

Lauren Hoang, Robert K.A. Bennett, Anh Tuan Hoang, Tara Pena et al.

2025·arXiv:2504.21102

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Continuous monolayer CVD-grown WSe₂ transferred onto prefabricated local back-gated HfO₂/SiO₂/Si substrates and fabricated into Pd/Au-contacted transistors; measured before and after chloroform soaking.

4 preparations7 characterizations17 properties4 figures

ExperimentalWSe₂Studied Material

DFT model of a chloroform molecule adsorbed on a 5x5 monolayer WSe₂ supercell in H-facing and Cl-facing orientations.

5 properties

Simulated Supercell DftWSe₂Studied MaterialCHCl₃Precursor

Materials

WSe₂

Studied Material

Also known as

tungsten diselenidemonolayer WSe₂

Variables

layer_count= 1

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Low Resistance P-Type Contacts to Monolayer WSe2 through Chlorinated Solvent Doping | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet Contact Resistance	RC (room temperature, doped)	2.5kΩ·μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Contact Resistance	RC (10 K, doped)	1kΩ·μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet On Off Ratio	Ion/Ioff	1010	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	203μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	403μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	113μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	97.4μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Threshold Voltage	VT,cc	-2.6V	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Threshold Voltage	median VT shift	-0.18V	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Contact Resistance	retained ID,max	81%	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Raman Intensity Ratio	E'/A1' peak intensity ratio	no significant change	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	X (neutral exciton)	1.75eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	T (trion)	1.71eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₁	1.67eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₂	1.64eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₃	1.6eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Pl Peak Intensity	overall PL intensity after chloroform exposure	lower than undoped sample	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Adsorption Energy	Eads (Cl-facing)	-373meV	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Adsorption Energy	Eads (H-facing)	-287meV	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Charge Transfer	Bader charge on chloroform	0.0125e	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Charge Transfer	Bader charge on chloroform	0.0349e	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Calculated Pdos Note	pDOS result	no chloroform states formed in the WSe2 band gap	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Contact Resistance	RC (room temperature, doped)	2.5kΩ·μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Contact Resistance	RC (10 K, doped)	1kΩ·μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet On Off Ratio	Ion/Ioff	1010	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	203μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	403μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	113μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	97.4μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Threshold Voltage	VT,cc	-2.6V	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Threshold Voltage	median VT shift	-0.18V	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Contact Resistance	retained ID,max	81%	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Raman Intensity Ratio	E'/A1' peak intensity ratio	no significant change	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	X (neutral exciton)	1.75eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	T (trion)	1.71eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₁	1.67eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₂	1.64eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₃	1.6eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Pl Peak Intensity	overall PL intensity after chloroform exposure	lower than undoped sample	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Adsorption Energy	Eads (Cl-facing)	-373meV	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Adsorption Energy	Eads (H-facing)	-287meV	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Charge Transfer	Bader charge on chloroform	0.0125e	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Charge Transfer	Bader charge on chloroform	0.0349e	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Calculated Pdos Note	pDOS result	no chloroform states formed in the WSe2 band gap	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Contact Resistance	RC (room temperature, doped)	2.5kΩ·μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Contact Resistance	RC (10 K, doped)	1kΩ·μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet On Off Ratio	Ion/Ioff	1010	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	203μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	403μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	113μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	97.4μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Threshold Voltage	VT,cc	-2.6V	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Threshold Voltage	median VT shift	-0.18V	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Contact Resistance	retained ID,max	81%	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Raman Intensity Ratio	E'/A1' peak intensity ratio	no significant change	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	X (neutral exciton)	1.75eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	T (trion)	1.71eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₁	1.67eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₂	1.64eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₃	1.6eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Pl Peak Intensity	overall PL intensity after chloroform exposure	lower than undoped sample	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Adsorption Energy	Eads (Cl-facing)	-373meV	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Adsorption Energy	Eads (H-facing)	-287meV	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Charge Transfer	Bader charge on chloroform	0.0125e	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Charge Transfer	Bader charge on chloroform	0.0349e	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Calculated Pdos Note	pDOS result	no chloroform states formed in the WSe2 band gap	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Contact Resistance	RC (room temperature, doped)	2.5kΩ·μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Contact Resistance	RC (10 K, doped)	1kΩ·μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet On Off Ratio	Ion/Ioff	1010	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	203μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	403μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	113μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Maximum Drain Current	ID,max	97.4μA/μm	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Threshold Voltage	VT,cc	-2.6V	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Threshold Voltage	median VT shift	-0.18V	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Fet Contact Resistance	retained ID,max	81%	WSe₂ Pd Au	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Raman Intensity Ratio	E'/A1' peak intensity ratio	no significant change	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	X (neutral exciton)	1.75eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	T (trion)	1.71eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₁	1.67eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₂	1.64eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
PL Peak	L₃	1.6eV	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Pl Peak Intensity	overall PL intensity after chloroform exposure	lower than undoped sample	WSe₂	Continuous monolayer CVD-grown WSe₂ transferred onto prefabr	—
Adsorption Energy	Eads (Cl-facing)	-373meV	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Adsorption Energy	Eads (H-facing)	-287meV	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Charge Transfer	Bader charge on chloroform	0.0125e	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Charge Transfer	Bader charge on chloroform	0.0349e	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—
Calculated Pdos Note	pDOS result	no chloroform states formed in the WSe2 band gap	WSe₂ CHCl₃	DFT model of a chloroform molecule adsorbed on a 5x5 monolay	—

Low Resistance P-Type Contacts to Monolayer WSe₂ through Chlorinated Solvent Doping

Samples

Continuous monolayer CVD-grown WSe₂ transferred onto prefabricated local back-gated HfO₂/SiO₂/Si substrates and fabricated into Pd/Au-contacted transistors; measured before and after chloroform soaking.

DFT model of a chloroform molecule adsorbed on a 5x5 monolayer WSe₂ supercell in H-facing and Cl-facing orientations.

Materials

Why these are connected

Low Resistance P-Type Contacts to Monolayer WSe₂ through Chlorinated Solvent Doping

Samples

Continuous monolayer CVD-grown WSe₂ transferred onto prefabricated local back-gated HfO₂/SiO₂/Si substrates and fabricated into Pd/Au-contacted transistors; measured before and after chloroform soaking.

DFT model of a chloroform molecule adsorbed on a 5x5 monolayer WSe₂ supercell in H-facing and Cl-facing orientations.

Materials

Why these are connected

Low Resistance P-Type Contacts to Monolayer WSe₂ through Chlorinated Solvent Doping

Samples

Continuous monolayer CVD-grown WSe₂ transferred onto prefabricated local back-gated HfO₂/SiO₂/Si substrates and fabricated into Pd/Au-contacted transistors; measured before and after chloroform soaking.

DFT model of a chloroform molecule adsorbed on a 5x5 monolayer WSe₂ supercell in H-facing and Cl-facing orientations.

Materials

Why these are connected

Low Resistance P-Type Contacts to Monolayer WSe₂ through Chlorinated Solvent Doping

Samples

Continuous monolayer CVD-grown WSe₂ transferred onto prefabricated local back-gated HfO₂/SiO₂/Si substrates and fabricated into Pd/Au-contacted transistors; measured before and after chloroform soaking.

DFT model of a chloroform molecule adsorbed on a 5x5 monolayer WSe₂ supercell in H-facing and Cl-facing orientations.

Materials

Why these are connected

Low Resistance P-Type Contacts to Monolayer WSe₂ through Chlorinated Solvent Doping

Samples

Continuous monolayer CVD-grown WSe₂ transferred onto prefabricated local back-gated HfO₂/SiO₂/Si substrates and fabricated into Pd/Au-contacted transistors; measured before and after chloroform soaking.

DFT model of a chloroform molecule adsorbed on a 5x5 monolayer WSe₂ supercell in H-facing and Cl-facing orientations.

Materials

Why these are connected

Low Resistance P-Type Contacts to Monolayer WSe₂ through Chlorinated Solvent Doping

Samples

Continuous monolayer CVD-grown WSe₂ transferred onto prefabricated local back-gated HfO₂/SiO₂/Si substrates and fabricated into Pd/Au-contacted transistors; measured before and after chloroform soaking.

DFT model of a chloroform molecule adsorbed on a 5x5 monolayer WSe₂ supercell in H-facing and Cl-facing orientations.

Materials

Why these are connected

Low Resistance P-Type Contacts to Monolayer WSe₂ through Chlorinated Solvent Doping

Samples

Continuous monolayer CVD-grown WSe₂ transferred onto prefabricated local back-gated HfO₂/SiO₂/Si substrates and fabricated into Pd/Au-contacted transistors; measured before and after chloroform soaking.

DFT model of a chloroform molecule adsorbed on a 5x5 monolayer WSe₂ supercell in H-facing and Cl-facing orientations.

Materials

Why these are connected

Low Resistance P-Type Contacts to Monolayer WSe₂ through Chlorinated Solvent Doping

Samples

Continuous monolayer CVD-grown WSe₂ transferred onto prefabricated local back-gated HfO₂/SiO₂/Si substrates and fabricated into Pd/Au-contacted transistors; measured before and after chloroform soaking.

DFT model of a chloroform molecule adsorbed on a 5x5 monolayer WSe₂ supercell in H-facing and Cl-facing orientations.

Materials

Why these are connected

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