MoS₂ transistor channel contacted through a fluorinated bilayer graphene interlayer and metal electrodes; representative device structure for Fermi-level depinning measurements.
5 preparations1 characterization3 figures
ExperimentalMoS₂Studied MaterialCStudied MaterialTiCapping Or Contact
MoS₂ device with direct metal contact used as a control for Schottky barrier extraction under strong Fermi-level pinning.
3 preparations1 characterization3 figures
ExperimentalMoS₂Studied MaterialCrCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
MoS₂ transistor channel contacted through a fluorinated bilayer graphene interlayer and metal electrodes; representative device structure for Fermi-level depinning measurements.
5 preparations1 characterization3 figures
ExperimentalMoS₂Studied MaterialCStudied MaterialTiCapping Or Contact
MoS₂ device with direct metal contact used as a control for Schottky barrier extraction under strong Fermi-level pinning.
3 preparations1 characterization3 figures
ExperimentalMoS₂Studied MaterialCrCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
MoS₂ transistor channel contacted through a fluorinated bilayer graphene interlayer and metal electrodes; representative device structure for Fermi-level depinning measurements.
5 preparations1 characterization3 figures
ExperimentalMoS₂Studied MaterialCStudied MaterialTiCapping Or Contact
MoS₂ device with direct metal contact used as a control for Schottky barrier extraction under strong Fermi-level pinning.
3 preparations1 characterization3 figures
ExperimentalMoS₂Studied MaterialCrCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
MoS₂ transistor channel contacted through a fluorinated bilayer graphene interlayer and metal electrodes; representative device structure for Fermi-level depinning measurements.
5 preparations1 characterization3 figures
ExperimentalMoS₂Studied MaterialCStudied MaterialTiCapping Or Contact
MoS₂ device with direct metal contact used as a control for Schottky barrier extraction under strong Fermi-level pinning.
3 preparations1 characterization3 figures
ExperimentalMoS₂Studied MaterialCrCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.