Abstract

Interlayer excitons (IXs) in two-dimensional (2D) van der Waals heterostructures have attracted considerable attention due to their unique optical and electronic properties. Owing to the spatially indirect nature, the radiative emission efficiency is highly sensitive to interlayer twist angles. Further considering that their uniformly oriented out-of-plane dipole moments limit directional emission, strategies to simultaneously improve emission efficiency and induce optical anisotropy warrant in-depth investigation. In this work, we report significant photoluminescence (PL) enhancement and optical anisotropy of IXs in 2L-MoSe₂/perovskite heterostructures mediated by energy transfer from ReS2. We attribute this enhancement to Förster resonance energy transfer (FRET), which increases the 2L-MoSe₂ emission by approximately eight-fold at room temperature, and nearly doubles the emission intensity of momentum-indirect IXs in 2L-MoSe₂/perovskite heterostructures at 78 K. Importantly, the optical anisotropy of ReS₂ can be effectively imprinted onto 2L-MoSe₂ and associated indirect IXs during the energy transfer process, yielding a linear dichroism of approximately 1.1 for both intralayer excitons and IXs with identical polarization directions. These findings expand the scope of IX study beyond direct bandgap materials with strong intrinsic emission to include systems with indirect bandgaps, offering new avenues for realizing high-performance polarization-sensitive optoelectronic devices.

Abstract

Interlayer excitons (IXs) in two-dimensional (2D) van der Waals heterostructures have attracted considerable attention due to their unique optical and electronic properties. Owing to the spatially indirect nature, the radiative emission efficiency is highly sensitive to interlayer twist angles. Further considering that their uniformly oriented out-of-plane dipole moments limit directional emission, strategies to simultaneously improve emission efficiency and induce optical anisotropy warrant in-depth investigation. In this work, we report significant photoluminescence (PL) enhancement and optical anisotropy of IXs in 2L-MoSe₂/perovskite heterostructures mediated by energy transfer from ReS2. We attribute this enhancement to Förster resonance energy transfer (FRET), which increases the 2L-MoSe₂ emission by approximately eight-fold at room temperature, and nearly doubles the emission intensity of momentum-indirect IXs in 2L-MoSe₂/perovskite heterostructures at 78 K. Importantly, the optical anisotropy of ReS₂ can be effectively imprinted onto 2L-MoSe₂ and associated indirect IXs during the energy transfer process, yielding a linear dichroism of approximately 1.1 for both intralayer excitons and IXs with identical polarization directions. These findings expand the scope of IX study beyond direct bandgap materials with strong intrinsic emission to include systems with indirect bandgaps, offering new avenues for realizing high-performance polarization-sensitive optoelectronic devices.

Abstract

Interlayer excitons (IXs) in two-dimensional (2D) van der Waals heterostructures have attracted considerable attention due to their unique optical and electronic properties. Owing to the spatially indirect nature, the radiative emission efficiency is highly sensitive to interlayer twist angles. Further considering that their uniformly oriented out-of-plane dipole moments limit directional emission, strategies to simultaneously improve emission efficiency and induce optical anisotropy warrant in-depth investigation. In this work, we report significant photoluminescence (PL) enhancement and optical anisotropy of IXs in 2L-MoSe₂/perovskite heterostructures mediated by energy transfer from ReS2. We attribute this enhancement to Förster resonance energy transfer (FRET), which increases the 2L-MoSe₂ emission by approximately eight-fold at room temperature, and nearly doubles the emission intensity of momentum-indirect IXs in 2L-MoSe₂/perovskite heterostructures at 78 K. Importantly, the optical anisotropy of ReS₂ can be effectively imprinted onto 2L-MoSe₂ and associated indirect IXs during the energy transfer process, yielding a linear dichroism of approximately 1.1 for both intralayer excitons and IXs with identical polarization directions. These findings expand the scope of IX study beyond direct bandgap materials with strong intrinsic emission to include systems with indirect bandgaps, offering new avenues for realizing high-performance polarization-sensitive optoelectronic devices.

Abstract

Interlayer excitons (IXs) in two-dimensional (2D) van der Waals heterostructures have attracted considerable attention due to their unique optical and electronic properties. Owing to the spatially indirect nature, the radiative emission efficiency is highly sensitive to interlayer twist angles. Further considering that their uniformly oriented out-of-plane dipole moments limit directional emission, strategies to simultaneously improve emission efficiency and induce optical anisotropy warrant in-depth investigation. In this work, we report significant photoluminescence (PL) enhancement and optical anisotropy of IXs in 2L-MoSe₂/perovskite heterostructures mediated by energy transfer from ReS2. We attribute this enhancement to Förster resonance energy transfer (FRET), which increases the 2L-MoSe₂ emission by approximately eight-fold at room temperature, and nearly doubles the emission intensity of momentum-indirect IXs in 2L-MoSe₂/perovskite heterostructures at 78 K. Importantly, the optical anisotropy of ReS₂ can be effectively imprinted onto 2L-MoSe₂ and associated indirect IXs during the energy transfer process, yielding a linear dichroism of approximately 1.1 for both intralayer excitons and IXs with identical polarization directions. These findings expand the scope of IX study beyond direct bandgap materials with strong intrinsic emission to include systems with indirect bandgaps, offering new avenues for realizing high-performance polarization-sensitive optoelectronic devices.