Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations7 characterizations4 properties5 figures
5 characterizations8 properties4 figures
5 characterizations5 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Dr Feature Position | WSe₂ exciton resonance | 759nm | — | |||
| Dr Feature Position | MoSe₂ exciton resonance | 796nm | — | |||
| PL Peak | A-exciton | 756nm | — | |||
| PL Peak | A-exciton | 796nm | — | |||
| Pl Peak Fwhm | A-exciton | 15nm | — | |||
| Pl Peak Fwhm | A-exciton | 14nm | — | |||
| PL Peak | X₀ | 723nm | — | |||
| PL Peak | X₀ | 759nm | — | |||
| Pl Peak Fwhm | X₀ | 2.5nm | — | |||
| Pl Peak Fwhm | X₀ | 1.8nm | — | |||
| PL Peak | X− | 759nm | — | |||
| Pl Peak Fwhm | X− | 2.1nm | — | |||
| Pl Peak Shift | X− below X₀ | 26meV | — | |||
| Fet On Off Ratio | diode characteristic | unidirectional current flow observed | — | |||
| Transport Current | maximum channel current | 165pA | — | |||
| PL Peak | quantum emitters | narrow-band emissions | — | |||
| Transport Current | photocurrent | photocurrent mapping observed | — |
Related documents with shared materials, methods, properties, or citations.
Trion-Engineered Multimodal Transistors in Two-dimensional Bilayer Semiconductor Lateral Heterostructures
Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer
Customising radiative decay dynamics of two-dimensional excitons via position- and polarisation-dependent vacuum-field interference
Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential
Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
Hierarchical spectral inhomogeneity in photoluminescence of a twisted MoSe2/WSe2 heterobilayer moiré superlattice revealed by hyperspectral mapping
Non-linear and negative effective diffusivity of optical excitations in moiré-free heterobilayers
Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
Diffusion of valley-coherent dark excitons in a large-angle incommensurate Moiré homobilayer
Optimizing strong light-matter coupling of plasmonic lattices and monolayer semiconductors
Tuning relaxation and nonlinear upconversion of valley-exciton-polaritons in a monolayer semiconductor
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations7 characterizations4 properties5 figures
5 characterizations8 properties4 figures
5 characterizations5 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Dr Feature Position | WSe₂ exciton resonance | 759nm | — | |||
| Dr Feature Position | MoSe₂ exciton resonance | 796nm | — | |||
| PL Peak | A-exciton | 756nm | — | |||
| PL Peak | A-exciton | 796nm | — | |||
| Pl Peak Fwhm | A-exciton | 15nm | — | |||
| Pl Peak Fwhm | A-exciton | 14nm | — | |||
| PL Peak | X₀ | 723nm | — | |||
| PL Peak | X₀ | 759nm | — | |||
| Pl Peak Fwhm | X₀ | 2.5nm | — | |||
| Pl Peak Fwhm | X₀ | 1.8nm | — | |||
| PL Peak | X− | 759nm | — | |||
| Pl Peak Fwhm | X− | 2.1nm | — | |||
| Pl Peak Shift | X− below X₀ | 26meV | — | |||
| Fet On Off Ratio | diode characteristic | unidirectional current flow observed | — | |||
| Transport Current | maximum channel current | 165pA | — | |||
| PL Peak | quantum emitters | narrow-band emissions | — | |||
| Transport Current | photocurrent | photocurrent mapping observed | — |
Related documents with shared materials, methods, properties, or citations.
Trion-Engineered Multimodal Transistors in Two-dimensional Bilayer Semiconductor Lateral Heterostructures
Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer
Customising radiative decay dynamics of two-dimensional excitons via position- and polarisation-dependent vacuum-field interference
Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential
Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
Hierarchical spectral inhomogeneity in photoluminescence of a twisted MoSe2/WSe2 heterobilayer moiré superlattice revealed by hyperspectral mapping
Non-linear and negative effective diffusivity of optical excitations in moiré-free heterobilayers
Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
Diffusion of valley-coherent dark excitons in a large-angle incommensurate Moiré homobilayer
Optimizing strong light-matter coupling of plasmonic lattices and monolayer semiconductors
Tuning relaxation and nonlinear upconversion of valley-exciton-polaritons in a monolayer semiconductor
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations7 characterizations4 properties5 figures
5 characterizations8 properties4 figures
5 characterizations5 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Dr Feature Position | WSe₂ exciton resonance | 759nm | — | |||
| Dr Feature Position | MoSe₂ exciton resonance | 796nm | — | |||
| PL Peak | A-exciton | 756nm | — | |||
| PL Peak | A-exciton | 796nm | — | |||
| Pl Peak Fwhm | A-exciton | 15nm | — | |||
| Pl Peak Fwhm | A-exciton | 14nm | — | |||
| PL Peak | X₀ | 723nm | — | |||
| PL Peak | X₀ | 759nm | — | |||
| Pl Peak Fwhm | X₀ | 2.5nm | — | |||
| Pl Peak Fwhm | X₀ | 1.8nm | — | |||
| PL Peak | X− | 759nm | — | |||
| Pl Peak Fwhm | X− | 2.1nm | — | |||
| Pl Peak Shift | X− below X₀ | 26meV | — | |||
| Fet On Off Ratio | diode characteristic | unidirectional current flow observed | — | |||
| Transport Current | maximum channel current | 165pA | — | |||
| PL Peak | quantum emitters | narrow-band emissions | — | |||
| Transport Current | photocurrent | photocurrent mapping observed | — |
Related documents with shared materials, methods, properties, or citations.
Trion-Engineered Multimodal Transistors in Two-dimensional Bilayer Semiconductor Lateral Heterostructures
Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer
Customising radiative decay dynamics of two-dimensional excitons via position- and polarisation-dependent vacuum-field interference
Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential
Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
Hierarchical spectral inhomogeneity in photoluminescence of a twisted MoSe2/WSe2 heterobilayer moiré superlattice revealed by hyperspectral mapping
Non-linear and negative effective diffusivity of optical excitations in moiré-free heterobilayers
Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
Diffusion of valley-coherent dark excitons in a large-angle incommensurate Moiré homobilayer
Optimizing strong light-matter coupling of plasmonic lattices and monolayer semiconductors
Tuning relaxation and nonlinear upconversion of valley-exciton-polaritons in a monolayer semiconductor
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations7 characterizations4 properties5 figures
5 characterizations8 properties4 figures
5 characterizations5 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Dr Feature Position | WSe₂ exciton resonance | 759nm | — | |||
| Dr Feature Position | MoSe₂ exciton resonance | 796nm | — | |||
| PL Peak | A-exciton | 756nm | — | |||
| PL Peak | A-exciton | 796nm | — | |||
| Pl Peak Fwhm | A-exciton | 15nm | — | |||
| Pl Peak Fwhm | A-exciton | 14nm | — | |||
| PL Peak | X₀ | 723nm | — | |||
| PL Peak | X₀ | 759nm | — | |||
| Pl Peak Fwhm | X₀ | 2.5nm | — | |||
| Pl Peak Fwhm | X₀ | 1.8nm | — | |||
| PL Peak | X− | 759nm | — | |||
| Pl Peak Fwhm | X− | 2.1nm | — | |||
| Pl Peak Shift | X− below X₀ | 26meV | — | |||
| Fet On Off Ratio | diode characteristic | unidirectional current flow observed | — | |||
| Transport Current | maximum channel current | 165pA | — | |||
| PL Peak | quantum emitters | narrow-band emissions | — | |||
| Transport Current | photocurrent | photocurrent mapping observed | — |
Related documents with shared materials, methods, properties, or citations.
Trion-Engineered Multimodal Transistors in Two-dimensional Bilayer Semiconductor Lateral Heterostructures
Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer
Customising radiative decay dynamics of two-dimensional excitons via position- and polarisation-dependent vacuum-field interference
Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential
Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
Hierarchical spectral inhomogeneity in photoluminescence of a twisted MoSe2/WSe2 heterobilayer moiré superlattice revealed by hyperspectral mapping
Non-linear and negative effective diffusivity of optical excitations in moiré-free heterobilayers
Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
Diffusion of valley-coherent dark excitons in a large-angle incommensurate Moiré homobilayer
Optimizing strong light-matter coupling of plasmonic lattices and monolayer semiconductors
Tuning relaxation and nonlinear upconversion of valley-exciton-polaritons in a monolayer semiconductor
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
