Copyright © 2026 Matter42. All rights reserved.

Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures | Matter42 Literature

Paper details

Research paper

Experimental GrowthExperimental Characterization

Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures

Maciej Matys, Atsushi Yamada, Toshihiro Ohki, Kouji Tsunoda

arXiv·2025·arXiv:2504.15536

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=0 (no SL).

2 preparations4 characterizations5 properties4 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=1.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=2.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=3.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=4.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=5.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=6.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=7.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=8.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure used for SIMS comparison, with 4-period SL and 400 nm thick GaN buffer layer.

2 preparations2 characterizations1 property2 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

Materials

AlGaN

AlGaN

Studied Material

Also known as

Al0.3Ga0.7NAl0.4Ga0.6N

Variables

composition= variable, nominal layers include Al0.3Ga0.7N barrier and Al0.4Ga0.6N cap

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental Characterization

Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures

Maciej Matys, Atsushi Yamada, Toshihiro Ohki, Kouji Tsunoda

arXiv·2025·arXiv:2504.15536

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=0 (no SL).

2 preparations4 characterizations5 properties4 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=1.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=2.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=3.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=4.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=5.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=6.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=7.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=8.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure used for SIMS comparison, with 4-period SL and 400 nm thick GaN buffer layer.

2 preparations2 characterizations1 property2 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

Materials

AlGaN

AlGaN

Studied Material

Also known as

Al0.3Ga0.7NAl0.4Ga0.6N

Variables

composition= variable, nominal layers include Al0.3Ga0.7N barrier and Al0.4Ga0.6N cap

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental Characterization

Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures

Maciej Matys, Atsushi Yamada, Toshihiro Ohki, Kouji Tsunoda

arXiv·2025·arXiv:2504.15536

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=0 (no SL).

2 preparations4 characterizations5 properties4 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=1.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=2.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=3.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=4.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=5.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=6.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=7.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=8.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure used for SIMS comparison, with 4-period SL and 400 nm thick GaN buffer layer.

2 preparations2 characterizations1 property2 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

Materials

AlGaN

AlGaN

Studied Material

Also known as

Al0.3Ga0.7NAl0.4Ga0.6N

Variables

composition= variable, nominal layers include Al0.3Ga0.7N barrier and Al0.4Ga0.6N cap

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental Characterization

Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures

Maciej Matys, Atsushi Yamada, Toshihiro Ohki, Kouji Tsunoda

arXiv·2025·arXiv:2504.15536

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=0 (no SL).

2 preparations4 characterizations5 properties4 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=1.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=2.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=3.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=4.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=5.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=6.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=7.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice back barrier, SL period number n=8.

2 preparations3 characterizations3 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

N-polar AlGaN/GaN heterostructure used for SIMS comparison, with 4-period SL and 400 nm thick GaN buffer layer.

2 preparations2 characterizations1 property2 figures

ExperimentalAlGaNStudied MaterialGaNStudied MaterialAlNStudied Material

Materials

AlGaN

AlGaN

Studied Material

Also known as

Al0.3Ga0.7NAl0.4Ga0.6N

Variables

composition= variable, nominal layers include Al0.3Ga0.7N barrier and Al0.4Ga0.6N cap

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Properties

Type	Label	Value	Material	Sample	Condition	Source
Impurity Concentration	oxygen concentration in GaN buffer	480000000000000000cm⁻³	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	oxygen concentration in top Al0.3Ga0.7N layer	20000000000000000000cm⁻³	AlGaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	carbon concentration in GaN buffer	below 1e16cm⁻³	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	carbon concentration in SL region	above 1e16cm⁻³	AlGaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Carrier Concentration	2DEG density	3-3.5e13cm⁻²	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice N-polar AlGaN/GaN heterostructure used for SIMS comparison,		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Impurity Concentration	oxygen concentration in GaN buffer	480000000000000000cm⁻³	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	oxygen concentration in top Al0.3Ga0.7N layer	20000000000000000000cm⁻³	AlGaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	carbon concentration in GaN buffer	below 1e16cm⁻³	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	carbon concentration in SL region	above 1e16cm⁻³	AlGaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Carrier Concentration	2DEG density	3-3.5e13cm⁻²	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice N-polar AlGaN/GaN heterostructure used for SIMS comparison,		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Impurity Concentration	oxygen concentration in GaN buffer	480000000000000000cm⁻³	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	oxygen concentration in top Al0.3Ga0.7N layer	20000000000000000000cm⁻³	AlGaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	carbon concentration in GaN buffer	below 1e16cm⁻³	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	carbon concentration in SL region	above 1e16cm⁻³	AlGaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Carrier Concentration	2DEG density	3-3.5e13cm⁻²	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice N-polar AlGaN/GaN heterostructure used for SIMS comparison,		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Impurity Concentration	oxygen concentration in GaN buffer	480000000000000000cm⁻³	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	oxygen concentration in top Al0.3Ga0.7N layer	20000000000000000000cm⁻³	AlGaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	carbon concentration in GaN buffer	below 1e16cm⁻³	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Impurity Concentration	carbon concentration in SL region	above 1e16cm⁻³	AlGaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice		—
Carrier Concentration	2DEG density	3-3.5e13cm⁻²	GaN	N-polar AlGaN/GaN heterostructure with GaN/AlN superlattice N-polar AlGaN/GaN heterostructure used for SIMS comparison,		—