Abstract

The epitaxial growth of group 13-nitride semiconductors (GaN, AlN, and AlGaN alloys) for high-frequency and high-power devices commonly relies on metal-organic chemical vapor deposition using carbon-containing precursors, which can lead to unwanted carbon incorporation and degraded device performance. This work reports the use of carbon-free brominated precursors in an industrial CVD/MOCVD system to grow GaN with GaBr₃ and AlN with AlBr3, using NH₃ as the nitrogen source, and compares the approach with conventional trimethyl precursors. The results indicate a clear reduction in optically active carbon-related defects and suggest a route toward carbon-free epitaxial growth of nitrides in commercial multi-wafer reactors.

Abstract

The epitaxial growth of group 13-nitride semiconductors (GaN, AlN, and AlGaN alloys) for high-frequency and high-power devices commonly relies on metal-organic chemical vapor deposition using carbon-containing precursors, which can lead to unwanted carbon incorporation and degraded device performance. This work reports the use of carbon-free brominated precursors in an industrial CVD/MOCVD system to grow GaN with GaBr₃ and AlN with AlBr3, using NH₃ as the nitrogen source, and compares the approach with conventional trimethyl precursors. The results indicate a clear reduction in optically active carbon-related defects and suggest a route toward carbon-free epitaxial growth of nitrides in commercial multi-wafer reactors.

Abstract

The epitaxial growth of group 13-nitride semiconductors (GaN, AlN, and AlGaN alloys) for high-frequency and high-power devices commonly relies on metal-organic chemical vapor deposition using carbon-containing precursors, which can lead to unwanted carbon incorporation and degraded device performance. This work reports the use of carbon-free brominated precursors in an industrial CVD/MOCVD system to grow GaN with GaBr₃ and AlN with AlBr3, using NH₃ as the nitrogen source, and compares the approach with conventional trimethyl precursors. The results indicate a clear reduction in optically active carbon-related defects and suggest a route toward carbon-free epitaxial growth of nitrides in commercial multi-wafer reactors.

Abstract

The epitaxial growth of group 13-nitride semiconductors (GaN, AlN, and AlGaN alloys) for high-frequency and high-power devices commonly relies on metal-organic chemical vapor deposition using carbon-containing precursors, which can lead to unwanted carbon incorporation and degraded device performance. This work reports the use of carbon-free brominated precursors in an industrial CVD/MOCVD system to grow GaN with GaBr₃ and AlN with AlBr3, using NH₃ as the nitrogen source, and compares the approach with conventional trimethyl precursors. The results indicate a clear reduction in optically active carbon-related defects and suggest a route toward carbon-free epitaxial growth of nitrides in commercial multi-wafer reactors.