Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations4 characterizations6 properties2 figures
2 preparations1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Edge | absorption edge | 386nm | — | |||
| Absorption Edge | absorption edge | 350nm | — | |||
| PL Peak | emission peak | 511nm | — | |||
| Pl Peak Shift | Stokes shift | 1120meV | — | |||
| Fet Carrier Concentration | maximum photocurrent density | 16mA/cm² | — | |||
| Fet Carrier Concentration | comparative photocurrent density | 8mA/cm² | — | |||
| Fet On Off Ratio | photoresponsivity | 330mA/W | — | |||
| Optical Band Gap | band gap | 3.4eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
METHOD OF DEPOSITING GALLIUM NITRIDE ON A SUBSTRATE
Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations4 characterizations6 properties2 figures
2 preparations1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Edge | absorption edge | 386nm | — | |||
| Absorption Edge | absorption edge | 350nm | — | |||
| PL Peak | emission peak | 511nm | — | |||
| Pl Peak Shift | Stokes shift | 1120meV | — | |||
| Fet Carrier Concentration | maximum photocurrent density | 16mA/cm² | — | |||
| Fet Carrier Concentration | comparative photocurrent density | 8mA/cm² | — | |||
| Fet On Off Ratio | photoresponsivity | 330mA/W | — | |||
| Optical Band Gap | band gap | 3.4eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
METHOD OF DEPOSITING GALLIUM NITRIDE ON A SUBSTRATE
Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations4 characterizations6 properties2 figures
2 preparations1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Edge | absorption edge | 386nm | — | |||
| Absorption Edge | absorption edge | 350nm | — | |||
| PL Peak | emission peak | 511nm | — | |||
| Pl Peak Shift | Stokes shift | 1120meV | — | |||
| Fet Carrier Concentration | maximum photocurrent density | 16mA/cm² | — | |||
| Fet Carrier Concentration | comparative photocurrent density | 8mA/cm² | — | |||
| Fet On Off Ratio | photoresponsivity | 330mA/W | — | |||
| Optical Band Gap | band gap | 3.4eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
METHOD OF DEPOSITING GALLIUM NITRIDE ON A SUBSTRATE
Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations4 characterizations6 properties2 figures
2 preparations1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Absorption Edge | absorption edge | 386nm | — | |||
| Absorption Edge | absorption edge | 350nm | — | |||
| PL Peak | emission peak | 511nm | — | |||
| Pl Peak Shift | Stokes shift | 1120meV | — | |||
| Fet Carrier Concentration | maximum photocurrent density | 16mA/cm² | — | |||
| Fet Carrier Concentration | comparative photocurrent density | 8mA/cm² | — | |||
| Fet On Off Ratio | photoresponsivity | 330mA/W | — | |||
| Optical Band Gap | band gap | 3.4eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
METHOD OF DEPOSITING GALLIUM NITRIDE ON A SUBSTRATE
Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
