| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A₁ mode | 120cm⁻¹ | — | — | ||
| Raman Peak | E₂ mode | 140cm⁻¹ | — | — | ||
| Substrate Thickness | SiO₂ thickness | 285nm | — | — | ||
| Substrate Thickness | Te channel thickness | 30nm | — | — | ||
| Fet Mobility | hole mobility | 1500cm²/Vs | — | |||
| Fet On Off Ratio | current on/off ratio | 44 | — | — | ||
| Fet On Off Ratio | rectification ratio (Vg = -30 V) | 128 | — | |||
| Fet On Off Ratio | rectification ratio (Vg = +20 V) | 3644 | — | |||
| Fet Sheet Resistance | current responsivity | 630A/W | — | |||
| PL Peak | photodetector responsivity | 630A/W | — | |||
| Fet Mobility | rectification ratio maximum | 4000 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A₁ mode | 120cm⁻¹ | — | — | ||
| Raman Peak | E₂ mode | 140cm⁻¹ | — | — | ||
| Substrate Thickness | SiO₂ thickness | 285nm | — | — | ||
| Substrate Thickness | Te channel thickness | 30nm | — | — | ||
| Fet Mobility | hole mobility | 1500cm²/Vs | — | |||
| Fet On Off Ratio | current on/off ratio | 44 | — | — | ||
| Fet On Off Ratio | rectification ratio (Vg = -30 V) | 128 | — | |||
| Fet On Off Ratio | rectification ratio (Vg = +20 V) | 3644 | — | |||
| Fet Sheet Resistance | current responsivity | 630A/W | — | |||
| PL Peak | photodetector responsivity | 630A/W | — | |||
| Fet Mobility | rectification ratio maximum | 4000 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A₁ mode | 120cm⁻¹ | — | — | ||
| Raman Peak | E₂ mode | 140cm⁻¹ | — | — | ||
| Substrate Thickness | SiO₂ thickness | 285nm | — | — | ||
| Substrate Thickness | Te channel thickness | 30nm | — | — | ||
| Fet Mobility | hole mobility | 1500cm²/Vs | — | |||
| Fet On Off Ratio | current on/off ratio | 44 | — | — | ||
| Fet On Off Ratio | rectification ratio (Vg = -30 V) | 128 | — | |||
| Fet On Off Ratio | rectification ratio (Vg = +20 V) | 3644 | — | |||
| Fet Sheet Resistance | current responsivity | 630A/W | — | |||
| PL Peak | photodetector responsivity | 630A/W | — | |||
| Fet Mobility | rectification ratio maximum | 4000 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A₁ mode | 120cm⁻¹ | — | — | ||
| Raman Peak | E₂ mode | 140cm⁻¹ | — | — | ||
| Substrate Thickness | SiO₂ thickness | 285nm | — | — | ||
| Substrate Thickness | Te channel thickness | 30nm | — | — | ||
| Fet Mobility | hole mobility | 1500cm²/Vs | — | |||
| Fet On Off Ratio | current on/off ratio | 44 | — | — | ||
| Fet On Off Ratio | rectification ratio (Vg = -30 V) | 128 | — | |||
| Fet On Off Ratio | rectification ratio (Vg = +20 V) | 3644 | — | |||
| Fet Sheet Resistance | current responsivity | 630A/W | — | |||
| PL Peak | photodetector responsivity | 630A/W | — | |||
| Fet Mobility | rectification ratio maximum | 4000 | — |
