Research paper
Experimental CharacterizationComputational DFTEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 property1 figure
3 characterizations2 properties1 figure
2 characterizations2 properties3 figures
2 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1g | 173cm⁻¹ | — | |||
| Afm Phase Shift | odd-layer step contrast | 6deg | — | |||
| Fet Carrier Concentration | carrier density | 825000000000cm⁻² | — | |||
| Fet Carrier Concentration | carrier density | 612000000000cm⁻² | — | |||
| Fet Threshold Voltage | hybridization gap | 25.2meV | — | |||
| Fet Threshold Voltage | hybridization gap | 30meV | — |
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Josephson junctions based on ultraclean carbon nanotubes
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Sub-nm Curvature Unlocks Quantum Flexoelectricity in Graphene
Catalytic growth of ultralong graphene nanoribbons on insulating substrates
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 property1 figure
3 characterizations2 properties1 figure
2 characterizations2 properties3 figures
2 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1g | 173cm⁻¹ | — | |||
| Afm Phase Shift | odd-layer step contrast | 6deg | — | |||
| Fet Carrier Concentration | carrier density | 825000000000cm⁻² | — | |||
| Fet Carrier Concentration | carrier density | 612000000000cm⁻² | — | |||
| Fet Threshold Voltage | hybridization gap | 25.2meV | — | |||
| Fet Threshold Voltage | hybridization gap | 30meV | — |
Related documents with shared materials, methods, properties, or citations.
Josephson junctions based on ultraclean carbon nanotubes
Self-powered programmable van der Waals photodetectors with nonvolatile semi-floating gate
Electron-Magnon Coupling Mediated Magnetotransport in Antiferromagnetic van der Waals Heterostructure
Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes
Sub-nm Curvature Unlocks Quantum Flexoelectricity in Graphene
Catalytic growth of ultralong graphene nanoribbons on insulating substrates
Electron viscosity and device-dependent variability in four-probe electrical transport in ultra-clean graphene field-effect transistors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 property1 figure
3 characterizations2 properties1 figure
2 characterizations2 properties3 figures
2 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1g | 173cm⁻¹ | — | |||
| Afm Phase Shift | odd-layer step contrast | 6deg | — | |||
| Fet Carrier Concentration | carrier density | 825000000000cm⁻² | — | |||
| Fet Carrier Concentration | carrier density | 612000000000cm⁻² | — | |||
| Fet Threshold Voltage | hybridization gap | 25.2meV | — | |||
| Fet Threshold Voltage | hybridization gap | 30meV | — |
Related documents with shared materials, methods, properties, or citations.
Josephson junctions based on ultraclean carbon nanotubes
Self-powered programmable van der Waals photodetectors with nonvolatile semi-floating gate
Electron-Magnon Coupling Mediated Magnetotransport in Antiferromagnetic van der Waals Heterostructure
Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes
Sub-nm Curvature Unlocks Quantum Flexoelectricity in Graphene
Catalytic growth of ultralong graphene nanoribbons on insulating substrates
Electron viscosity and device-dependent variability in four-probe electrical transport in ultra-clean graphene field-effect transistors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 property1 figure
3 characterizations2 properties1 figure
2 characterizations2 properties3 figures
2 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1g | 173cm⁻¹ | — | |||
| Afm Phase Shift | odd-layer step contrast | 6deg | — | |||
| Fet Carrier Concentration | carrier density | 825000000000cm⁻² | — | |||
| Fet Carrier Concentration | carrier density | 612000000000cm⁻² | — | |||
| Fet Threshold Voltage | hybridization gap | 25.2meV | — | |||
| Fet Threshold Voltage | hybridization gap | 30meV | — |
Related documents with shared materials, methods, properties, or citations.
Josephson junctions based on ultraclean carbon nanotubes
Self-powered programmable van der Waals photodetectors with nonvolatile semi-floating gate
Electron-Magnon Coupling Mediated Magnetotransport in Antiferromagnetic van der Waals Heterostructure
Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes
Sub-nm Curvature Unlocks Quantum Flexoelectricity in Graphene
Catalytic growth of ultralong graphene nanoribbons on insulating substrates
Electron viscosity and device-dependent variability in four-probe electrical transport in ultra-clean graphene field-effect transistors