Research paper
Experimental CharacterizationComputational DFTQuantum Hall effect in lightly hydrogenated graphene
I.G. van Rens, O.O. Zheliuk, M.W. de Dreu, K. Mukhuti et al.
Copyright © 2026 Matter42. All rights reserved.
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | G | 1580cm⁻¹ | — | |||
| Raman Peak | 2D | 2670cm⁻¹ | — | |||
| Raman Peak | D | 1340cm⁻¹ | — | |||
| Raman Peak | D' | 1620cm⁻¹ | — | |||
| Raman Peak | D+D' | 2920cm⁻¹ | — | |||
| Fet Threshold Voltage | CNP shift | charge neutrality point shifts to higher gate voltage | — | |||
| Fet Mobility | mobility change | decreased | — | |||
| Activation Gap | ν=±2 | 80K | — | |||
| Activation Gap | ν=±2 | 55K | — | |||
| Fet Threshold Voltage | minimum field for quantum Hall effect | 20T | — | |||
| Fet Mobility | effective cyclotron mass | 0.24me | — | |||
| Fet Mobility | effective cyclotron mass | 0.4me | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | G | 1580cm⁻¹ | — | |||
| Raman Peak | 2D | 2670cm⁻¹ | — | |||
| Raman Peak | D | 1340cm⁻¹ | — | |||
| Raman Peak | D' | 1620cm⁻¹ | — | |||
| Raman Peak | D+D' | 2920cm⁻¹ | — | |||
| Fet Threshold Voltage | CNP shift | charge neutrality point shifts to higher gate voltage | — | |||
| Fet Mobility | mobility change | decreased | — | |||
| Activation Gap | ν=±2 | 80K | — | |||
| Activation Gap | ν=±2 | 55K | — | |||
| Fet Threshold Voltage | minimum field for quantum Hall effect | 20T | — | |||
| Fet Mobility | effective cyclotron mass | 0.24me | — | |||
| Fet Mobility | effective cyclotron mass | 0.4me | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | G | 1580cm⁻¹ | — | |||
| Raman Peak | 2D | 2670cm⁻¹ | — | |||
| Raman Peak | D | 1340cm⁻¹ | — | |||
| Raman Peak | D' | 1620cm⁻¹ | — | |||
| Raman Peak | D+D' | 2920cm⁻¹ | — | |||
| Fet Threshold Voltage | CNP shift | charge neutrality point shifts to higher gate voltage | — | |||
| Fet Mobility | mobility change | decreased | — | |||
| Activation Gap | ν=±2 | 80K | — | |||
| Activation Gap | ν=±2 | 55K | — | |||
| Fet Threshold Voltage | minimum field for quantum Hall effect | 20T | — | |||
| Fet Mobility | effective cyclotron mass | 0.24me | — | |||
| Fet Mobility | effective cyclotron mass | 0.4me | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | G | 1580cm⁻¹ | — | |||
| Raman Peak | 2D | 2670cm⁻¹ | — | |||
| Raman Peak | D | 1340cm⁻¹ | — | |||
| Raman Peak | D' | 1620cm⁻¹ | — | |||
| Raman Peak | D+D' | 2920cm⁻¹ | — | |||
| Fet Threshold Voltage | CNP shift | charge neutrality point shifts to higher gate voltage | — | |||
| Fet Mobility | mobility change | decreased | — | |||
| Activation Gap | ν=±2 | 80K | — | |||
| Activation Gap | ν=±2 | 55K | — | |||
| Fet Threshold Voltage | minimum field for quantum Hall effect | 20T | — | |||
| Fet Mobility | effective cyclotron mass | 0.24me | — | |||
| Fet Mobility | effective cyclotron mass | 0.4me | — |