Abstract

Mid-infrared (MIR) emitters are critical components in advanced photonic systems, driving progress in fields such as chemical sensing, environmental monitoring, medical diagnostics, thermal imaging and free-space communications. Conventional MIR emitters based on III-V heterostructures rely on complex epitaxial growth on rigid lattice-matched substrates and suffer from limited integration compatibility with CMOS or flexible platforms. The recent development of novel MIR emitters based on two-dimensional (2D) materials such as black phosphorus (BP) is more suitable for on-chip applications but faces challenges related to stability and emission efficiency. Based on the recently discovered highly efficient photoluminescence of Te, we demonstrate a gate-tunable mid-infrared light-emitting diode based on a van der Waals heterojunction formed by multilayer transition metal dichalcogenide (TMD) MoS₂ and tellurium (Te). The device emits polarized electroluminescence (EL) centered at 3.5 μm under forward bias at 25 K, and the EL persists up to 80 K with reduced intensity. Gate control of the MoS₂ Fermi level modulates the band alignment and injection efficiency, enabling dynamic tuning of the EL intensity. The emission remains spectrally stable under varying bias and gating, indicating robust band-edge recombination. These results establish the Te/TMD heterostructure as a promising platform for integrated polarized mid-infrared optoelectronics.

Abstract

Mid-infrared (MIR) emitters are critical components in advanced photonic systems, driving progress in fields such as chemical sensing, environmental monitoring, medical diagnostics, thermal imaging and free-space communications. Conventional MIR emitters based on III-V heterostructures rely on complex epitaxial growth on rigid lattice-matched substrates and suffer from limited integration compatibility with CMOS or flexible platforms. The recent development of novel MIR emitters based on two-dimensional (2D) materials such as black phosphorus (BP) is more suitable for on-chip applications but faces challenges related to stability and emission efficiency. Based on the recently discovered highly efficient photoluminescence of Te, we demonstrate a gate-tunable mid-infrared light-emitting diode based on a van der Waals heterojunction formed by multilayer transition metal dichalcogenide (TMD) MoS₂ and tellurium (Te). The device emits polarized electroluminescence (EL) centered at 3.5 μm under forward bias at 25 K, and the EL persists up to 80 K with reduced intensity. Gate control of the MoS₂ Fermi level modulates the band alignment and injection efficiency, enabling dynamic tuning of the EL intensity. The emission remains spectrally stable under varying bias and gating, indicating robust band-edge recombination. These results establish the Te/TMD heterostructure as a promising platform for integrated polarized mid-infrared optoelectronics.

Abstract

Mid-infrared (MIR) emitters are critical components in advanced photonic systems, driving progress in fields such as chemical sensing, environmental monitoring, medical diagnostics, thermal imaging and free-space communications. Conventional MIR emitters based on III-V heterostructures rely on complex epitaxial growth on rigid lattice-matched substrates and suffer from limited integration compatibility with CMOS or flexible platforms. The recent development of novel MIR emitters based on two-dimensional (2D) materials such as black phosphorus (BP) is more suitable for on-chip applications but faces challenges related to stability and emission efficiency. Based on the recently discovered highly efficient photoluminescence of Te, we demonstrate a gate-tunable mid-infrared light-emitting diode based on a van der Waals heterojunction formed by multilayer transition metal dichalcogenide (TMD) MoS₂ and tellurium (Te). The device emits polarized electroluminescence (EL) centered at 3.5 μm under forward bias at 25 K, and the EL persists up to 80 K with reduced intensity. Gate control of the MoS₂ Fermi level modulates the band alignment and injection efficiency, enabling dynamic tuning of the EL intensity. The emission remains spectrally stable under varying bias and gating, indicating robust band-edge recombination. These results establish the Te/TMD heterostructure as a promising platform for integrated polarized mid-infrared optoelectronics.

Abstract

Mid-infrared (MIR) emitters are critical components in advanced photonic systems, driving progress in fields such as chemical sensing, environmental monitoring, medical diagnostics, thermal imaging and free-space communications. Conventional MIR emitters based on III-V heterostructures rely on complex epitaxial growth on rigid lattice-matched substrates and suffer from limited integration compatibility with CMOS or flexible platforms. The recent development of novel MIR emitters based on two-dimensional (2D) materials such as black phosphorus (BP) is more suitable for on-chip applications but faces challenges related to stability and emission efficiency. Based on the recently discovered highly efficient photoluminescence of Te, we demonstrate a gate-tunable mid-infrared light-emitting diode based on a van der Waals heterojunction formed by multilayer transition metal dichalcogenide (TMD) MoS₂ and tellurium (Te). The device emits polarized electroluminescence (EL) centered at 3.5 μm under forward bias at 25 K, and the EL persists up to 80 K with reduced intensity. Gate control of the MoS₂ Fermi level modulates the band alignment and injection efficiency, enabling dynamic tuning of the EL intensity. The emission remains spectrally stable under varying bias and gating, indicating robust band-edge recombination. These results establish the Te/TMD heterostructure as a promising platform for integrated polarized mid-infrared optoelectronics.