Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 property2 figures
4 preparations1 characterization9 properties1 figure
6 preparations3 characterizations8 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Roughness Rms | RMS surface roughness | 3.1nm | — | |||
| Carrier Density | 2DEG density | (4-6)·1011cm⁻² | — | |||
| Carrier Mobility | electron mobility | (0.9-1.3)·105cm²/Vs | — | |||
| Carrier Density | Hall density | 4.95cm⁻² | — | |||
| Carrier Mobility | mobility | 86000cm²/Vs | — | |||
| Sdh Frequency | BF | 10.24T | — | |||
| Effective Mass | effective mass | 0.0281me | — | |||
| Dingle Temperature | TD | 17.5K | — | |||
| Elastic Scattering Time | taue | 0.069ps | — | |||
| Transport Lifetime | tautr | 1.37ps | — | |||
| Carrier Density | 2DEG density near second subband onset | 6cm⁻² | — | |||
| Carrier Density | pre-ALD density | 5.65cm⁻² | — | |||
| Effective Mass | effective mass | 0.028me | — | |||
| Subband Energy Separation | E(2)-E(1) | 56meV | — | |||
| Induced Superconducting Gap | induced gap | 125µeV | — | |||
| Surface Doping Threshold | depletion threshold Vth | -5.3V | — | |||
| Subband Onset Gate Voltage | 2nd subband onset | -4.4V | — | — | ||
| Carrier Density | density at 2nd subband onset | 6.5cm⁻² | — |
Related documents with shared materials, methods, properties, or citations.
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Synthesis of a semimetallic Weyl ferromagnet with point Fermi surface
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Flux-periodic supercurrent oscillations in an Aharonov–Bohm–type nanowire Josephson junction
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
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ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 property2 figures
4 preparations1 characterization9 properties1 figure
6 preparations3 characterizations8 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Roughness Rms | RMS surface roughness | 3.1nm | — | |||
| Carrier Density | 2DEG density | (4-6)·1011cm⁻² | — | |||
| Carrier Mobility | electron mobility | (0.9-1.3)·105cm²/Vs | — | |||
| Carrier Density | Hall density | 4.95cm⁻² | — | |||
| Carrier Mobility | mobility | 86000cm²/Vs | — | |||
| Sdh Frequency | BF | 10.24T | — | |||
| Effective Mass | effective mass | 0.0281me | — | |||
| Dingle Temperature | TD | 17.5K | — | |||
| Elastic Scattering Time | taue | 0.069ps | — | |||
| Transport Lifetime | tautr | 1.37ps | — | |||
| Carrier Density | 2DEG density near second subband onset | 6cm⁻² | — | |||
| Carrier Density | pre-ALD density | 5.65cm⁻² | — | |||
| Effective Mass | effective mass | 0.028me | — | |||
| Subband Energy Separation | E(2)-E(1) | 56meV | — | |||
| Induced Superconducting Gap | induced gap | 125µeV | — | |||
| Surface Doping Threshold | depletion threshold Vth | -5.3V | — | |||
| Subband Onset Gate Voltage | 2nd subband onset | -4.4V | — | — | ||
| Carrier Density | density at 2nd subband onset | 6.5cm⁻² | — |
Related documents with shared materials, methods, properties, or citations.
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Synthesis of a semimetallic Weyl ferromagnet with point Fermi surface
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Flux-periodic supercurrent oscillations in an Aharonov–Bohm–type nanowire Josephson junction
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 property2 figures
4 preparations1 characterization9 properties1 figure
6 preparations3 characterizations8 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Roughness Rms | RMS surface roughness | 3.1nm | — | |||
| Carrier Density | 2DEG density | (4-6)·1011cm⁻² | — | |||
| Carrier Mobility | electron mobility | (0.9-1.3)·105cm²/Vs | — | |||
| Carrier Density | Hall density | 4.95cm⁻² | — | |||
| Carrier Mobility | mobility | 86000cm²/Vs | — | |||
| Sdh Frequency | BF | 10.24T | — | |||
| Effective Mass | effective mass | 0.0281me | — | |||
| Dingle Temperature | TD | 17.5K | — | |||
| Elastic Scattering Time | taue | 0.069ps | — | |||
| Transport Lifetime | tautr | 1.37ps | — | |||
| Carrier Density | 2DEG density near second subband onset | 6cm⁻² | — | |||
| Carrier Density | pre-ALD density | 5.65cm⁻² | — | |||
| Effective Mass | effective mass | 0.028me | — | |||
| Subband Energy Separation | E(2)-E(1) | 56meV | — | |||
| Induced Superconducting Gap | induced gap | 125µeV | — | |||
| Surface Doping Threshold | depletion threshold Vth | -5.3V | — | |||
| Subband Onset Gate Voltage | 2nd subband onset | -4.4V | — | — | ||
| Carrier Density | density at 2nd subband onset | 6.5cm⁻² | — |
Related documents with shared materials, methods, properties, or citations.
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Synthesis of a semimetallic Weyl ferromagnet with point Fermi surface
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Flux-periodic supercurrent oscillations in an Aharonov–Bohm–type nanowire Josephson junction
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 property2 figures
4 preparations1 characterization9 properties1 figure
6 preparations3 characterizations8 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Roughness Rms | RMS surface roughness | 3.1nm | — | |||
| Carrier Density | 2DEG density | (4-6)·1011cm⁻² | — | |||
| Carrier Mobility | electron mobility | (0.9-1.3)·105cm²/Vs | — | |||
| Carrier Density | Hall density | 4.95cm⁻² | — | |||
| Carrier Mobility | mobility | 86000cm²/Vs | — | |||
| Sdh Frequency | BF | 10.24T | — | |||
| Effective Mass | effective mass | 0.0281me | — | |||
| Dingle Temperature | TD | 17.5K | — | |||
| Elastic Scattering Time | taue | 0.069ps | — | |||
| Transport Lifetime | tautr | 1.37ps | — | |||
| Carrier Density | 2DEG density near second subband onset | 6cm⁻² | — | |||
| Carrier Density | pre-ALD density | 5.65cm⁻² | — | |||
| Effective Mass | effective mass | 0.028me | — | |||
| Subband Energy Separation | E(2)-E(1) | 56meV | — | |||
| Induced Superconducting Gap | induced gap | 125µeV | — | |||
| Surface Doping Threshold | depletion threshold Vth | -5.3V | — | |||
| Subband Onset Gate Voltage | 2nd subband onset | -4.4V | — | — | ||
| Carrier Density | density at 2nd subband onset | 6.5cm⁻² | — |
Related documents with shared materials, methods, properties, or citations.
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Synthesis of a semimetallic Weyl ferromagnet with point Fermi surface
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Flux-periodic supercurrent oscillations in an Aharonov–Bohm–type nanowire Josephson junction
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
