Research paperExperimental GrowthExperimental CharacterizationEngineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSeBiswajit Khan, Santanu Kandar, Taslim Khan, Kritika Bhattacharya et al.arXiv·2025·10.48550/arxiv.2502.13261·arXiv:2502.13261AbstractWe demonstrate the direct wafer-scale growth of 1T′-WTe₂ via molecular beam epitaxy (MBE) and its use as a 2D contact for layered materials such as InSe. The 1T′-WTe₂/InSe interface exhibits a barrier height nearly half that of conventional metal contacts, and its contact resistance is reduced by a factor of 21, effectively suppressing Fermi-level pinning and enabling efficient electron injection. InSe/1T′-WTe₂ photodetectors show broad photoresponsivity under NIR to DUV illumination with fast response times, compared to conventional Ti–Au contacts.Read more
MBE-grown wafer-scale 1T′-WTe₂ film used as the van der Waals electrode material.2 preparations1 characterization8 properties2 figuresExperimentalWTe₂Studied MaterialExpand
Mechanically exfoliated InSe flake used for heterostructure and device fabrication.1 preparation2 characterizations7 properties2 figuresExperimentalInSeStudied MaterialExpand
1T′-WTe₂/InSe/1T′-WTe₂ vertical heterostructure device with WTe₂ acting as both top and bottom van der Waals electrodes.1 preparation4 characterizations25 properties5 figuresExperimentalWTe₂Studied MaterialInSeStudied MaterialExpand
Ti–Au/InSe/Ti–Au reference device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.3 preparations3 characterizations7 properties4 figuresExperimentalInSeStudied MaterialTiCapping Or ContactAuCapping Or ContactAl₂O₃Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationEngineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSeBiswajit Khan, Santanu Kandar, Taslim Khan, Kritika Bhattacharya et al.arXiv·2025·10.48550/arxiv.2502.13261·arXiv:2502.13261AbstractWe demonstrate the direct wafer-scale growth of 1T′-WTe₂ via molecular beam epitaxy (MBE) and its use as a 2D contact for layered materials such as InSe. The 1T′-WTe₂/InSe interface exhibits a barrier height nearly half that of conventional metal contacts, and its contact resistance is reduced by a factor of 21, effectively suppressing Fermi-level pinning and enabling efficient electron injection. InSe/1T′-WTe₂ photodetectors show broad photoresponsivity under NIR to DUV illumination with fast response times, compared to conventional Ti–Au contacts.Read more
MBE-grown wafer-scale 1T′-WTe₂ film used as the van der Waals electrode material.2 preparations1 characterization8 properties2 figuresExperimentalWTe₂Studied MaterialExpand
Mechanically exfoliated InSe flake used for heterostructure and device fabrication.1 preparation2 characterizations7 properties2 figuresExperimentalInSeStudied MaterialExpand
1T′-WTe₂/InSe/1T′-WTe₂ vertical heterostructure device with WTe₂ acting as both top and bottom van der Waals electrodes.1 preparation4 characterizations25 properties5 figuresExperimentalWTe₂Studied MaterialInSeStudied MaterialExpand
Ti–Au/InSe/Ti–Au reference device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.3 preparations3 characterizations7 properties4 figuresExperimentalInSeStudied MaterialTiCapping Or ContactAuCapping Or ContactAl₂O₃Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationEngineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSeBiswajit Khan, Santanu Kandar, Taslim Khan, Kritika Bhattacharya et al.arXiv·2025·10.48550/arxiv.2502.13261·arXiv:2502.13261AbstractWe demonstrate the direct wafer-scale growth of 1T′-WTe₂ via molecular beam epitaxy (MBE) and its use as a 2D contact for layered materials such as InSe. The 1T′-WTe₂/InSe interface exhibits a barrier height nearly half that of conventional metal contacts, and its contact resistance is reduced by a factor of 21, effectively suppressing Fermi-level pinning and enabling efficient electron injection. InSe/1T′-WTe₂ photodetectors show broad photoresponsivity under NIR to DUV illumination with fast response times, compared to conventional Ti–Au contacts.Read more
MBE-grown wafer-scale 1T′-WTe₂ film used as the van der Waals electrode material.2 preparations1 characterization8 properties2 figuresExperimentalWTe₂Studied MaterialExpand
Mechanically exfoliated InSe flake used for heterostructure and device fabrication.1 preparation2 characterizations7 properties2 figuresExperimentalInSeStudied MaterialExpand
1T′-WTe₂/InSe/1T′-WTe₂ vertical heterostructure device with WTe₂ acting as both top and bottom van der Waals electrodes.1 preparation4 characterizations25 properties5 figuresExperimentalWTe₂Studied MaterialInSeStudied MaterialExpand
Ti–Au/InSe/Ti–Au reference device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.3 preparations3 characterizations7 properties4 figuresExperimentalInSeStudied MaterialTiCapping Or ContactAuCapping Or ContactAl₂O₃Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationEngineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSeBiswajit Khan, Santanu Kandar, Taslim Khan, Kritika Bhattacharya et al.arXiv·2025·10.48550/arxiv.2502.13261·arXiv:2502.13261AbstractWe demonstrate the direct wafer-scale growth of 1T′-WTe₂ via molecular beam epitaxy (MBE) and its use as a 2D contact for layered materials such as InSe. The 1T′-WTe₂/InSe interface exhibits a barrier height nearly half that of conventional metal contacts, and its contact resistance is reduced by a factor of 21, effectively suppressing Fermi-level pinning and enabling efficient electron injection. InSe/1T′-WTe₂ photodetectors show broad photoresponsivity under NIR to DUV illumination with fast response times, compared to conventional Ti–Au contacts.Read more
MBE-grown wafer-scale 1T′-WTe₂ film used as the van der Waals electrode material.2 preparations1 characterization8 properties2 figuresExperimentalWTe₂Studied MaterialExpand
Mechanically exfoliated InSe flake used for heterostructure and device fabrication.1 preparation2 characterizations7 properties2 figuresExperimentalInSeStudied MaterialExpand
1T′-WTe₂/InSe/1T′-WTe₂ vertical heterostructure device with WTe₂ acting as both top and bottom van der Waals electrodes.1 preparation4 characterizations25 properties5 figuresExperimentalWTe₂Studied MaterialInSeStudied MaterialExpand
Ti–Au/InSe/Ti–Au reference device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.3 preparations3 characterizations7 properties4 figuresExperimentalInSeStudied MaterialTiCapping Or ContactAuCapping Or ContactAl₂O₃Substrate / DielectricExpand