Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe

Biswajit Khan; Santanu Kandar; Taslim Khan; Kritika Bhattacharya; Nahid Chowdhury; Suprovat Ghosh; Pawan Kumar; Rajendra Singh; Samaresh Das

doi:10.48550/arxiv.2502.13261

Paper details

Research paper

Experimental GrowthExperimental Characterization

Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSe

Biswajit Khan, Santanu Kandar, Taslim Khan, Kritika Bhattacharya et al.

arXiv·2025·arXiv:2502.13261

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later for device fabrication.

2 preparations6 characterizations9 properties5 figures

ExperimentalWTe₂Studied Material

InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pads to form the vdW contact device.

1 preparation4 characterizations35 properties4 figures

ExperimentalInSeStudied MaterialWTe₂Studied MaterialAl₂O₃Substrate / Dielectric

Ti–Au contacted InSe device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.

2 preparations3 characterizations8 properties4 figures

ExperimentalInSeStudied MaterialAl₂O₃Substrate / DielectricTiCapping Or ContactAuCapping Or Contact

Materials

1T′-WTe₂

WTe₂

Studied Material

Also known as

WTe₂1T'-WTe₂1T′ WTe₂

Variables

phase= 1T′

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	WTe₂ film thickness	7.2nm	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Substrate Thickness	InSe flake thickness	37.7nm	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Surface Roughness	RMS roughness	0.5nm	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Surface Roughness	RMS roughness	0.28nm	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd Peak Two Theta	(002)	12.29deg	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd D Spacing	(002)	7.51angstrom	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Lattice Constant C	c-axis lattice constant	14.4angstrom	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Space Group	phase symmetry	Pmn21	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Peak Two Theta	(003)	10.61deg	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd D Spacing	(003)	8.33angstrom	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd Lattice Constant C	c-axis lattice constant	16.66angstrom	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Sheet Resistance	Rsheet	4420ohm/sq	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Contact Resistance Ratio	WTe₂/InSe vs Ti-Au/InSe	21	WTe₂ InSe Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Barrier Height	1T′-WTe₂/InSe	0.338eV	WTe₂ InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Barrier Height	InSe/Ti-Au	0.96eV	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Work Function	1T′-WTe₂	4.478eV	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Work Function	InSe	4.484eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Stoichiometry Ratio	W:Te	1:1.87	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Stoichiometry Ratio	In:Se	1:1	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Responsivity	InSe/1T′-WTe₂	0.14–217.58A/W	InSe WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Photodetector Response Time	rise/fall time	42/126ms	InSe WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Photodetector Responsivity	InSe/Ti–Au	8.65e-4–3.64A/W	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Response Time	rise/fall time	150/144ms	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Responsivity Ratio	responsivity enhancement factor	60	InSe WTe₂ Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Speed Ratio	response-speed enhancement factor	4	InSe WTe₂ Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Xps Binding Energy	W 4f7/2	31.89eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	W 4f7/2	2.09eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	W 4f5/2	33.98eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	W 4f5/2	2.09eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Te 3d5/2	572.92eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Te 3d5/2	10.405eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Te 3d3/2	583.325eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Te 3d3/2	10.405eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	W 4f7/2	0.11eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	W 4f5/2	0.02eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	Te 3d5/2	0.08eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	Te 3d3/2	0.325eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	In 3d5/2	443.38eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	In 3d5/2	7.553eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	In 3d3/2	450.933eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	In 3d3/2	7.553eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	In 3d5/2	1.22eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	In 3d3/2	1.2eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Se 3d5/2	52.731eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Se 3d5/2	1.09eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Se 3d3/2	53.83eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Se 3d3/2	1.09eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	WTe₂ film thickness	7.2nm	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Substrate Thickness	InSe flake thickness	37.7nm	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Surface Roughness	RMS roughness	0.5nm	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Surface Roughness	RMS roughness	0.28nm	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd Peak Two Theta	(002)	12.29deg	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd D Spacing	(002)	7.51angstrom	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Lattice Constant C	c-axis lattice constant	14.4angstrom	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Space Group	phase symmetry	Pmn21	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Peak Two Theta	(003)	10.61deg	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd D Spacing	(003)	8.33angstrom	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd Lattice Constant C	c-axis lattice constant	16.66angstrom	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Sheet Resistance	Rsheet	4420ohm/sq	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Contact Resistance Ratio	WTe₂/InSe vs Ti-Au/InSe	21	WTe₂ InSe Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Barrier Height	1T′-WTe₂/InSe	0.338eV	WTe₂ InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Barrier Height	InSe/Ti-Au	0.96eV	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Work Function	1T′-WTe₂	4.478eV	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Work Function	InSe	4.484eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Stoichiometry Ratio	W:Te	1:1.87	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Stoichiometry Ratio	In:Se	1:1	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Responsivity	InSe/1T′-WTe₂	0.14–217.58A/W	InSe WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Photodetector Response Time	rise/fall time	42/126ms	InSe WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Photodetector Responsivity	InSe/Ti–Au	8.65e-4–3.64A/W	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Response Time	rise/fall time	150/144ms	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Responsivity Ratio	responsivity enhancement factor	60	InSe WTe₂ Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Speed Ratio	response-speed enhancement factor	4	InSe WTe₂ Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Xps Binding Energy	W 4f7/2	31.89eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	W 4f7/2	2.09eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	W 4f5/2	33.98eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	W 4f5/2	2.09eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Te 3d5/2	572.92eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Te 3d5/2	10.405eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Te 3d3/2	583.325eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Te 3d3/2	10.405eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	W 4f7/2	0.11eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	W 4f5/2	0.02eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	Te 3d5/2	0.08eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	Te 3d3/2	0.325eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	In 3d5/2	443.38eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	In 3d5/2	7.553eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	In 3d3/2	450.933eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	In 3d3/2	7.553eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	In 3d5/2	1.22eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	In 3d3/2	1.2eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Se 3d5/2	52.731eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Se 3d5/2	1.09eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Se 3d3/2	53.83eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Se 3d3/2	1.09eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	WTe₂ film thickness	7.2nm	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Substrate Thickness	InSe flake thickness	37.7nm	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Surface Roughness	RMS roughness	0.5nm	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Surface Roughness	RMS roughness	0.28nm	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd Peak Two Theta	(002)	12.29deg	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd D Spacing	(002)	7.51angstrom	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Lattice Constant C	c-axis lattice constant	14.4angstrom	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Space Group	phase symmetry	Pmn21	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Peak Two Theta	(003)	10.61deg	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd D Spacing	(003)	8.33angstrom	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd Lattice Constant C	c-axis lattice constant	16.66angstrom	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Sheet Resistance	Rsheet	4420ohm/sq	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Contact Resistance Ratio	WTe₂/InSe vs Ti-Au/InSe	21	WTe₂ InSe Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Barrier Height	1T′-WTe₂/InSe	0.338eV	WTe₂ InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Barrier Height	InSe/Ti-Au	0.96eV	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Work Function	1T′-WTe₂	4.478eV	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Work Function	InSe	4.484eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Stoichiometry Ratio	W:Te	1:1.87	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Stoichiometry Ratio	In:Se	1:1	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Responsivity	InSe/1T′-WTe₂	0.14–217.58A/W	InSe WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Photodetector Response Time	rise/fall time	42/126ms	InSe WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Photodetector Responsivity	InSe/Ti–Au	8.65e-4–3.64A/W	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Response Time	rise/fall time	150/144ms	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Responsivity Ratio	responsivity enhancement factor	60	InSe WTe₂ Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Speed Ratio	response-speed enhancement factor	4	InSe WTe₂ Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Xps Binding Energy	W 4f7/2	31.89eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	W 4f7/2	2.09eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	W 4f5/2	33.98eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	W 4f5/2	2.09eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Te 3d5/2	572.92eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Te 3d5/2	10.405eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Te 3d3/2	583.325eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Te 3d3/2	10.405eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	W 4f7/2	0.11eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	W 4f5/2	0.02eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	Te 3d5/2	0.08eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	Te 3d3/2	0.325eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	In 3d5/2	443.38eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	In 3d5/2	7.553eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	In 3d3/2	450.933eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	In 3d3/2	7.553eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	In 3d5/2	1.22eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	In 3d3/2	1.2eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Se 3d5/2	52.731eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Se 3d5/2	1.09eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Se 3d3/2	53.83eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Se 3d3/2	1.09eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	WTe₂ film thickness	7.2nm	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Substrate Thickness	InSe flake thickness	37.7nm	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Surface Roughness	RMS roughness	0.5nm	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Surface Roughness	RMS roughness	0.28nm	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd Peak Two Theta	(002)	12.29deg	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd D Spacing	(002)	7.51angstrom	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Lattice Constant C	c-axis lattice constant	14.4angstrom	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Space Group	phase symmetry	Pmn21	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Xrd Peak Two Theta	(003)	10.61deg	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd D Spacing	(003)	8.33angstrom	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xrd Lattice Constant C	c-axis lattice constant	16.66angstrom	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Sheet Resistance	Rsheet	4420ohm/sq	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Contact Resistance Ratio	WTe₂/InSe vs Ti-Au/InSe	21	WTe₂ InSe Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Barrier Height	1T′-WTe₂/InSe	0.338eV	WTe₂ InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Barrier Height	InSe/Ti-Au	0.96eV	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Work Function	1T′-WTe₂	4.478eV	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Work Function	InSe	4.484eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Stoichiometry Ratio	W:Te	1:1.87	WTe₂	MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later	—
Stoichiometry Ratio	In:Se	1:1	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Responsivity	InSe/1T′-WTe₂	0.14–217.58A/W	InSe WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Photodetector Response Time	rise/fall time	42/126ms	InSe WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Photodetector Responsivity	InSe/Ti–Au	8.65e-4–3.64A/W	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Response Time	rise/fall time	150/144ms	InSe Ti Au	Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Responsivity Ratio	responsivity enhancement factor	60	InSe WTe₂ Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Photodetector Speed Ratio	response-speed enhancement factor	4	InSe WTe₂ Ti Au	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad Ti–Au contacted InSe device fabricated by exfoliating InSe o	—
Xps Binding Energy	W 4f7/2	31.89eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	W 4f7/2	2.09eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	W 4f5/2	33.98eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	W 4f5/2	2.09eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Te 3d5/2	572.92eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Te 3d5/2	10.405eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Te 3d3/2	583.325eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Te 3d3/2	10.405eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	W 4f7/2	0.11eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	W 4f5/2	0.02eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	Te 3d5/2	0.08eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	Te 3d3/2	0.325eV	WTe₂	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	In 3d5/2	443.38eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	In 3d5/2	7.553eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	In 3d3/2	450.933eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	In 3d3/2	7.553eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	In 3d5/2	1.22eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy Shift	In 3d3/2	1.2eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Se 3d5/2	52.731eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Se 3d5/2	1.09eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Binding Energy	Se 3d3/2	53.83eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—
Xps Spin Orbit Splitting	Se 3d3/2	1.09eV	InSe	InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pad	—

Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSe

Samples

MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later for device fabrication.

InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pads to form the vdW contact device.

Ti–Au contacted InSe device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.

Materials

Why these are connected

Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSe

Samples

MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later for device fabrication.

InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pads to form the vdW contact device.

Ti–Au contacted InSe device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.

Materials

Why these are connected

Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSe

Samples

MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later for device fabrication.

InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pads to form the vdW contact device.

Ti–Au contacted InSe device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.

Materials

Why these are connected

Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSe

Samples

MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later for device fabrication.

InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pads to form the vdW contact device.

Ti–Au contacted InSe device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.

Materials

Why these are connected

Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSe

Samples

MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later for device fabrication.

InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pads to form the vdW contact device.

Ti–Au contacted InSe device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.

Materials

Why these are connected

Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSe

Samples

MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later for device fabrication.

InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pads to form the vdW contact device.

Ti–Au contacted InSe device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.

Materials

Why these are connected

Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSe

Samples

MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later for device fabrication.

InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pads to form the vdW contact device.

Ti–Au contacted InSe device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.

Materials

Why these are connected

Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe₂ for Enhanced Photodetection in InSe

Samples

MBE-grown 1T′-WTe₂ film on c-plane sapphire, patterned later for device fabrication.

InSe flake transferred onto patterned MBE-grown 1T′-WTe₂ pads to form the vdW contact device.

Ti–Au contacted InSe device fabricated by exfoliating InSe onto sapphire followed by lithography, metallization, and lift-off.

Materials

Why these are connected

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

Properties