Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

YongJin Cho; Changkai Yu; Huili Grace Xing; Debdeep Jena

doi:10.1116/6.0005286

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Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

YongJin Cho, Changkai Yu, Huili Grace Xing, Debdeep Jena

arXiv preprint·2026·10.1116/6.0005286·arXiv:2602.12882

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GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on a Ga-polar GaN(0001)/sapphire template, containing Ga-rich, N-rich, and Ga/N-flux-free Mn-doped regions separated by GaN spacer layers and a GaN buffer layer.

1 preparation3 characterizations10 properties2 figures

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Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy | Matter42 Literature