Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

YongJin Cho; Changkai Yu; Huili Grace Xing; Debdeep Jena

doi:10.1116/6.0005286

Paper details

Research paper

Experimental GrowthExperimental Characterization

Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

YongJin Cho, Changkai Yu, Huili Grace Xing, Debdeep Jena

arXiv preprint·2026·10.1116/6.0005286·arXiv:2602.12882

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on a Ga-polar GaN(0001)/sapphire template, containing Ga-rich, N-rich, and Ga/N-flux-free Mn-doped regions separated by GaN spacer layers and a GaN buffer layer.

1 preparation3 characterizations10 properties2 figures

ExperimentalGaNStudied Material

Materials

GaN

Studied Material

Also known as

GaN:Mn

Variables

dopant= Mn

studied material

sapphire

Al₂O₃

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Surface Roughness Rms	RMS roughness	0.68nm	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Surface Roughness Rms	RMS roughness	0.64nm	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Concentration	Mn concentration	100000000000000000000atoms/cm³	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Concentration	Mn concentration	1000000000000000000atoms/cm³	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Areal Density	Mn areal density	8200000000000atoms/cm²	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	780000000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	240000000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	8600000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Sticking Coefficient	relative Mn sticking coefficient	0.31	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Sticking Coefficient	relative Mn sticking coefficient	0.01	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—

Properties

Type	Label	Value	Material	Sample	Source
Surface Roughness Rms	RMS roughness	0.68nm	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Surface Roughness Rms	RMS roughness	0.64nm	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Concentration	Mn concentration	100000000000000000000atoms/cm³	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Concentration	Mn concentration	1000000000000000000atoms/cm³	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Areal Density	Mn areal density	8200000000000atoms/cm²	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	780000000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	240000000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	8600000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Sticking Coefficient	relative Mn sticking coefficient	0.31	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Sticking Coefficient	relative Mn sticking coefficient	0.01	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—

Properties

Type	Label	Value	Material	Sample	Source
Surface Roughness Rms	RMS roughness	0.68nm	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Surface Roughness Rms	RMS roughness	0.64nm	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Concentration	Mn concentration	100000000000000000000atoms/cm³	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Concentration	Mn concentration	1000000000000000000atoms/cm³	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Areal Density	Mn areal density	8200000000000atoms/cm²	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	780000000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	240000000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	8600000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Sticking Coefficient	relative Mn sticking coefficient	0.31	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Sticking Coefficient	relative Mn sticking coefficient	0.01	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—

Properties

Type	Label	Value	Material	Sample	Source
Surface Roughness Rms	RMS roughness	0.68nm	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Surface Roughness Rms	RMS roughness	0.64nm	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Concentration	Mn concentration	100000000000000000000atoms/cm³	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Concentration	Mn concentration	1000000000000000000atoms/cm³	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Dopant Areal Density	Mn areal density	8200000000000atoms/cm²	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	780000000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	240000000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Incorporated Flux	incorporated Mn flux	8600000000atoms/cm²/s	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Sticking Coefficient	relative Mn sticking coefficient	0.31	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—
Sticking Coefficient	relative Mn sticking coefficient	0.01	GaN	GaN:Mn/GaN multilayer sample grown by plasma-assisted MBE on	—