Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization3 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Synthesis of a semimetallic Weyl ferromagnet with point Fermi surface
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms
Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
Enhanced Interband Optical Nonlinearities from Coupled Quantum Wells
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization3 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Synthesis of a semimetallic Weyl ferromagnet with point Fermi surface
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms
Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
Enhanced Interband Optical Nonlinearities from Coupled Quantum Wells
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization3 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Synthesis of a semimetallic Weyl ferromagnet with point Fermi surface
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms
Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
Enhanced Interband Optical Nonlinearities from Coupled Quantum Wells
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization3 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Synthesis of a semimetallic Weyl ferromagnet with point Fermi surface
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
Persistent flat band splitting and strong selective band renormalization in a kagome magnet thin film
Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms
Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
Enhanced Interband Optical Nonlinearities from Coupled Quantum Wells
