Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization6 properties3 figures
1 characterization7 properties3 figures
1 characterization7 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fractional Frequency Instability | modified Allan deviation | 3.0e-17 | — | |||
| Fractional Frequency Instability | modified Allan deviation | 3.2e-17 | — | |||
| Birefringent Splitting | line splitting | 200000Hz | — | |||
| Birefringent Splitting | line splitting | 770000Hz | — | |||
| Birefringent Splitting | line splitting | 104000Hz | — | |||
| Cavity Finesse | slow axis | 1.290(2) x 10^5 | — | |||
| Cavity Finesse | fast axis | 1.282(2) x 10^5 | — | |||
| Coating Thickness | AlGaAs/GaAs coating stack thickness | 11.7um | — | |||
| Coating Thickness | AlGaAs/GaAs coating stack thickness | 9.6um | — | |||
| Mirror Beam Radius | beam radius | 482um | — | |||
| Mirror Beam Radius | beam radius | 294um | — | |||
| Mirror Beam Radius | beam radius | 495um | — | |||
| Cavity Length | cavity length | 21cm | — | |||
| Cavity Length | cavity length | 6cm | — | |||
| Cavity Length | cavity length | 48cm | — | |||
| Operating Temperature | cavity operating temperature | 124K | — | |||
| Operating Temperature | cavity operating temperature | 4K | — | |||
| Operating Temperature | cavity operating temperature | 16K | — | |||
| Operating Temperature | cavity operating temperature | 297K | — |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR TRANSFERRING GRAPHENE USING A HOT PRESS
Ultra-Stable Transportable Ultraviolet Clock Laser Using Cancellation Between Photo-Thermal and Photo-Birefringence Noise
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Direct Nanoscale Pyroelectric Characterization of a CuInP2S6 van der Waals Nanogenerator
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Isolation and characterization of atomically thin mica phyllosilicates
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GRAPHENE-BASED DETECTOR FOR W-BAND AND TERAHERTZ RADIATIONS
GAN-BASED, LATERAL-CONDUCTION, ELECTRONIC DEVICE WITH IMPROVED METALLIC LAYERS LAYOUT
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Geometric Engineering of Flat Bands in a Single-layer Photonic Graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization6 properties3 figures
1 characterization7 properties3 figures
1 characterization7 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fractional Frequency Instability | modified Allan deviation | 3.0e-17 | — | |||
| Fractional Frequency Instability | modified Allan deviation | 3.2e-17 | — | |||
| Birefringent Splitting | line splitting | 200000Hz | — | |||
| Birefringent Splitting | line splitting | 770000Hz | — | |||
| Birefringent Splitting | line splitting | 104000Hz | — | |||
| Cavity Finesse | slow axis | 1.290(2) x 10^5 | — | |||
| Cavity Finesse | fast axis | 1.282(2) x 10^5 | — | |||
| Coating Thickness | AlGaAs/GaAs coating stack thickness | 11.7um | — | |||
| Coating Thickness | AlGaAs/GaAs coating stack thickness | 9.6um | — | |||
| Mirror Beam Radius | beam radius | 482um | — | |||
| Mirror Beam Radius | beam radius | 294um | — | |||
| Mirror Beam Radius | beam radius | 495um | — | |||
| Cavity Length | cavity length | 21cm | — | |||
| Cavity Length | cavity length | 6cm | — | |||
| Cavity Length | cavity length | 48cm | — | |||
| Operating Temperature | cavity operating temperature | 124K | — | |||
| Operating Temperature | cavity operating temperature | 4K | — | |||
| Operating Temperature | cavity operating temperature | 16K | — | |||
| Operating Temperature | cavity operating temperature | 297K | — |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR TRANSFERRING GRAPHENE USING A HOT PRESS
Ultra-Stable Transportable Ultraviolet Clock Laser Using Cancellation Between Photo-Thermal and Photo-Birefringence Noise
GRAPHENE-CONTACTED NANOTUBE PHOTODETECTOR
Direct Nanoscale Pyroelectric Characterization of a CuInP2S6 van der Waals Nanogenerator
Molecularly Thin Polyaramid Nanomechanical Resonators
Micro-Transfer Printed Continuous-Wave and Mode-Locked Laser Integration at 800 nm on a Silicon Nitride Platform
Isolation and characterization of atomically thin mica phyllosilicates
Fourth-harmonic UV light generation in integrated silicon nitride microresonators
GRAPHENE-BASED DETECTOR FOR W-BAND AND TERAHERTZ RADIATIONS
GAN-BASED, LATERAL-CONDUCTION, ELECTRONIC DEVICE WITH IMPROVED METALLIC LAYERS LAYOUT
CIRCUIT BOARD INCLUDING A GRAPHENE FILM HAVING CONTACT REGION COVERING A RECESSED REGION AND A PATTERNED METAL FILM COVERING THE CONTACT REGION AND IN DIRECT ELECTRICAL CONTACT THERWITH, AND DEVICE INCLUDING SAME
Geometric Engineering of Flat Bands in a Single-layer Photonic Graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization6 properties3 figures
1 characterization7 properties3 figures
1 characterization7 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fractional Frequency Instability | modified Allan deviation | 3.0e-17 | — | |||
| Fractional Frequency Instability | modified Allan deviation | 3.2e-17 | — | |||
| Birefringent Splitting | line splitting | 200000Hz | — | |||
| Birefringent Splitting | line splitting | 770000Hz | — | |||
| Birefringent Splitting | line splitting | 104000Hz | — | |||
| Cavity Finesse | slow axis | 1.290(2) x 10^5 | — | |||
| Cavity Finesse | fast axis | 1.282(2) x 10^5 | — | |||
| Coating Thickness | AlGaAs/GaAs coating stack thickness | 11.7um | — | |||
| Coating Thickness | AlGaAs/GaAs coating stack thickness | 9.6um | — | |||
| Mirror Beam Radius | beam radius | 482um | — | |||
| Mirror Beam Radius | beam radius | 294um | — | |||
| Mirror Beam Radius | beam radius | 495um | — | |||
| Cavity Length | cavity length | 21cm | — | |||
| Cavity Length | cavity length | 6cm | — | |||
| Cavity Length | cavity length | 48cm | — | |||
| Operating Temperature | cavity operating temperature | 124K | — | |||
| Operating Temperature | cavity operating temperature | 4K | — | |||
| Operating Temperature | cavity operating temperature | 16K | — | |||
| Operating Temperature | cavity operating temperature | 297K | — |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR TRANSFERRING GRAPHENE USING A HOT PRESS
Ultra-Stable Transportable Ultraviolet Clock Laser Using Cancellation Between Photo-Thermal and Photo-Birefringence Noise
GRAPHENE-CONTACTED NANOTUBE PHOTODETECTOR
Direct Nanoscale Pyroelectric Characterization of a CuInP2S6 van der Waals Nanogenerator
Molecularly Thin Polyaramid Nanomechanical Resonators
Micro-Transfer Printed Continuous-Wave and Mode-Locked Laser Integration at 800 nm on a Silicon Nitride Platform
Isolation and characterization of atomically thin mica phyllosilicates
Fourth-harmonic UV light generation in integrated silicon nitride microresonators
GRAPHENE-BASED DETECTOR FOR W-BAND AND TERAHERTZ RADIATIONS
GAN-BASED, LATERAL-CONDUCTION, ELECTRONIC DEVICE WITH IMPROVED METALLIC LAYERS LAYOUT
CIRCUIT BOARD INCLUDING A GRAPHENE FILM HAVING CONTACT REGION COVERING A RECESSED REGION AND A PATTERNED METAL FILM COVERING THE CONTACT REGION AND IN DIRECT ELECTRICAL CONTACT THERWITH, AND DEVICE INCLUDING SAME
Geometric Engineering of Flat Bands in a Single-layer Photonic Graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization6 properties3 figures
1 characterization7 properties3 figures
1 characterization7 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fractional Frequency Instability | modified Allan deviation | 3.0e-17 | — | |||
| Fractional Frequency Instability | modified Allan deviation | 3.2e-17 | — | |||
| Birefringent Splitting | line splitting | 200000Hz | — | |||
| Birefringent Splitting | line splitting | 770000Hz | — | |||
| Birefringent Splitting | line splitting | 104000Hz | — | |||
| Cavity Finesse | slow axis | 1.290(2) x 10^5 | — | |||
| Cavity Finesse | fast axis | 1.282(2) x 10^5 | — | |||
| Coating Thickness | AlGaAs/GaAs coating stack thickness | 11.7um | — | |||
| Coating Thickness | AlGaAs/GaAs coating stack thickness | 9.6um | — | |||
| Mirror Beam Radius | beam radius | 482um | — | |||
| Mirror Beam Radius | beam radius | 294um | — | |||
| Mirror Beam Radius | beam radius | 495um | — | |||
| Cavity Length | cavity length | 21cm | — | |||
| Cavity Length | cavity length | 6cm | — | |||
| Cavity Length | cavity length | 48cm | — | |||
| Operating Temperature | cavity operating temperature | 124K | — | |||
| Operating Temperature | cavity operating temperature | 4K | — | |||
| Operating Temperature | cavity operating temperature | 16K | — | |||
| Operating Temperature | cavity operating temperature | 297K | — |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR TRANSFERRING GRAPHENE USING A HOT PRESS
Ultra-Stable Transportable Ultraviolet Clock Laser Using Cancellation Between Photo-Thermal and Photo-Birefringence Noise
GRAPHENE-CONTACTED NANOTUBE PHOTODETECTOR
Direct Nanoscale Pyroelectric Characterization of a CuInP2S6 van der Waals Nanogenerator
Molecularly Thin Polyaramid Nanomechanical Resonators
Micro-Transfer Printed Continuous-Wave and Mode-Locked Laser Integration at 800 nm on a Silicon Nitride Platform
Isolation and characterization of atomically thin mica phyllosilicates
Fourth-harmonic UV light generation in integrated silicon nitride microresonators
GRAPHENE-BASED DETECTOR FOR W-BAND AND TERAHERTZ RADIATIONS
GAN-BASED, LATERAL-CONDUCTION, ELECTRONIC DEVICE WITH IMPROVED METALLIC LAYERS LAYOUT
CIRCUIT BOARD INCLUDING A GRAPHENE FILM HAVING CONTACT REGION COVERING A RECESSED REGION AND A PATTERNED METAL FILM COVERING THE CONTACT REGION AND IN DIRECT ELECTRICAL CONTACT THERWITH, AND DEVICE INCLUDING SAME
Geometric Engineering of Flat Bands in a Single-layer Photonic Graphene