Patent
US 10,121,926A GRAPHENE-BASED DETECTOR FOR W-BAND AND TERAHERTZ RADIATIONS
Mina Amirmazlaghani
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,121,926Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an implementation of a method for detecting W-band and terahertz radiations, according to one or more aspects of the present disclosure. …
FIG. 2C illustrates an implementation of a graphene-Si Schottky detector array, according to one implementation of the present disclosure. [002 1] FIG s. 3A-3E …
FIG. 3B. To this end, the first side of the doped silicon substrate 301 may be covered by a photoresist layer and then the doped silicon substrate 301 may be …
FIG. 4 illustrates a scanning electron microscope (SEM) image of a surface of the fabricated graphene-Si Schottky detector, according to an implementation of …
FIG. 5 illustrates a current-voltage (I- V) characteristic curve of a graphene-Si Schottky detector, according to one implementation of the present disclosure. …
FIG. 6 illustrates a setup for evaluating sensitivity of the fabricated graphene-Si Schottky detector to THz radiations, according to one exemplary …
FIG. 7 illustrates calculated responsivity at different temperatures.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting W-band and terahertz radiations, the method comprising: providing a graphene-Si Scho t tky diode that includes a graphene monolayer that at one end area is in Ohmic contact with an upper surface of an electrode above and insulated from a top surface of a doped silicon substrate, and that extends over an edge of the electrode to another end area that contacts the top surface in a manner forming a Scho t tky junction; storing reference current-voltage (I-V) characteristics of the Scho t tky junction in a reverse biased mode; measuring an I -V characteristic of the Schottky junction in the revese biased mode; comparing a result of the measuring to the stored reference I -V characteristic; and based on a result of the comparing, detecting W-band and terahertz radiation.
The method of claim 1 for detecting W-band and terahertz radiations, the method further including: measuring I -V characteristics of the Schottky junction in the reverse biased mode when the Schottky junction is not exposed to any W-band and terahertz radiations, and wherein storing reference I -V characteristics of the Scho t tky junction includes storing a result of the measuring I -V characteristics of the Schottky junction when the Scho t tky junction is not exposed to any W-band and terahertz radiations.
The method of claim 1 for detecting W-band and terahertz radiations, wherein: the top surface includes a first region and a second region, the electrode is supported on an insulating layer disposed on the first region, and the another end area of the graphene monolayer contacts and forms a Schottky junction on the second region of the top surface.
The method of claim 1 for detecting W-band and terahertz radiations, wherein detecting W-band and terahertz radiation includes detecting I -V characteristics of the Scho t tky junction being different from the reference I -V characteristics of the Scho t tky junction.
The method of claim 1 for detecting W-band and terahertz radiations, wherein: the substrate includes a p-type silicon with a resistivity of 1-10 Q.cm.
The method of claim 1 for detecting W-band and terahertz radiations, wherein the electrode is supported on an insulating layer that is disposed on the fi rst region, and the insulating layer includes a S iO 2 layer.
The system of claim 1 8 for de t ecting W-band and terahertz radiations, wherein: the top surface includes a first region and a second region, the source electrode is supported on an insulating la y er disposed on the first region, and the another end area of the graphene monolayer contacts and forms a Scho t tky junction on the second region of the top surface.
A system for detecting W-band and terahertz radiations, the system comprising: a graphene-Si Scho t tky diode associated with a source electrode and a drain electrode; a power source coupled with the source electrode and the drain electrode and con fi gured to apply a reference voltage between the source electrode and the drain electrode; a measurement instrument con fi gured to measure a generated current between the source electrode and the drain electrode; and a processing unit con fi gured to compare the measured generated current with a reference current, and to detect the W-band and terahertz radiations based on the comparison.
The system of claim 11 for detecting W-band and terahertz radiations, wherein: the graphene-Si Schottky diode includes a doped silicon substrate, forming a top surface and, opposite from and facing away from the top surface, a bottom surface, the source electrode is arranged above and insulated from the top surface, and the drain electrode is disposed on the bottom surface.
A system for detecting W-band and terahertz radiations, the system comprising: a graphene-Si Scho t tky diode associated with a source electrode and a drain electrode; a power source coupled with the source electrode and the drain electrode and configured to apply a reference current between the source electrode and the drain electrode; a measurement instrument configured to measure, during the applying the reference current, a resulting voltage between the source electrode and the drain electrode; and a processing unit configured to compare the resulting voltage measurement to a reference voltage, and to detect the W-band and terahertz radiations based on the comparison.
The system of claim 16 for detecting W-band and terahertz radiations, wherein: the graphene-Si Schottky diode includes a doped silicon substrate, forming a top surface and, opposite from and facing away from the top surface, a bottom surface, the source electrode is arranged above and insulated from the top surface, and the drain electrode is disposed on the bottom surface.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-Si Schottky diode
Materials described outside the worked examples.
graphene monolayer
doped silicon substrate
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 illustrates a scanning electron microscope (SEM) image of a surface of the fabricated graphene-Si Schottky detector, according to an implementation of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-type silicon substrate resistivity (claim 9) | 1–10 Ω·cm | Si |
p-type silicon substrate resistivity (description/summary) | 25–35 Ω·cm |
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Patent
Atlas literature
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US 10,121,926Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an implementation of a method for detecting W-band and terahertz radiations, according to one or more aspects of the present disclosure. …
FIG. 2C illustrates an implementation of a graphene-Si Schottky detector array, according to one implementation of the present disclosure. [002 1] FIG s. 3A-3E …
FIG. 3B. To this end, the first side of the doped silicon substrate 301 may be covered by a photoresist layer and then the doped silicon substrate 301 may be …
FIG. 4 illustrates a scanning electron microscope (SEM) image of a surface of the fabricated graphene-Si Schottky detector, according to an implementation of …
FIG. 5 illustrates a current-voltage (I- V) characteristic curve of a graphene-Si Schottky detector, according to one implementation of the present disclosure. …
FIG. 6 illustrates a setup for evaluating sensitivity of the fabricated graphene-Si Schottky detector to THz radiations, according to one exemplary …
FIG. 7 illustrates calculated responsivity at different temperatures.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting W-band and terahertz radiations, the method comprising: providing a graphene-Si Scho t tky diode that includes a graphene monolayer that at one end area is in Ohmic contact with an upper surface of an electrode above and insulated from a top surface of a doped silicon substrate, and that extends over an edge of the electrode to another end area that contacts the top surface in a manner forming a Scho t tky junction; storing reference current-voltage (I-V) characteristics of the Scho t tky junction in a reverse biased mode; measuring an I -V characteristic of the Schottky junction in the revese biased mode; comparing a result of the measuring to the stored reference I -V characteristic; and based on a result of the comparing, detecting W-band and terahertz radiation.
The method of claim 1 for detecting W-band and terahertz radiations, the method further including: measuring I -V characteristics of the Schottky junction in the reverse biased mode when the Schottky junction is not exposed to any W-band and terahertz radiations, and wherein storing reference I -V characteristics of the Scho t tky junction includes storing a result of the measuring I -V characteristics of the Schottky junction when the Scho t tky junction is not exposed to any W-band and terahertz radiations.
The method of claim 1 for detecting W-band and terahertz radiations, wherein: the top surface includes a first region and a second region, the electrode is supported on an insulating layer disposed on the first region, and the another end area of the graphene monolayer contacts and forms a Schottky junction on the second region of the top surface.
The method of claim 1 for detecting W-band and terahertz radiations, wherein detecting W-band and terahertz radiation includes detecting I -V characteristics of the Scho t tky junction being different from the reference I -V characteristics of the Scho t tky junction.
The method of claim 1 for detecting W-band and terahertz radiations, wherein: the substrate includes a p-type silicon with a resistivity of 1-10 Q.cm.
The method of claim 1 for detecting W-band and terahertz radiations, wherein the electrode is supported on an insulating layer that is disposed on the fi rst region, and the insulating layer includes a S iO 2 layer.
The system of claim 1 8 for de t ecting W-band and terahertz radiations, wherein: the top surface includes a first region and a second region, the source electrode is supported on an insulating la y er disposed on the first region, and the another end area of the graphene monolayer contacts and forms a Scho t tky junction on the second region of the top surface.
A system for detecting W-band and terahertz radiations, the system comprising: a graphene-Si Scho t tky diode associated with a source electrode and a drain electrode; a power source coupled with the source electrode and the drain electrode and con fi gured to apply a reference voltage between the source electrode and the drain electrode; a measurement instrument con fi gured to measure a generated current between the source electrode and the drain electrode; and a processing unit con fi gured to compare the measured generated current with a reference current, and to detect the W-band and terahertz radiations based on the comparison.
The system of claim 11 for detecting W-band and terahertz radiations, wherein: the graphene-Si Schottky diode includes a doped silicon substrate, forming a top surface and, opposite from and facing away from the top surface, a bottom surface, the source electrode is arranged above and insulated from the top surface, and the drain electrode is disposed on the bottom surface.
A system for detecting W-band and terahertz radiations, the system comprising: a graphene-Si Scho t tky diode associated with a source electrode and a drain electrode; a power source coupled with the source electrode and the drain electrode and configured to apply a reference current between the source electrode and the drain electrode; a measurement instrument configured to measure, during the applying the reference current, a resulting voltage between the source electrode and the drain electrode; and a processing unit configured to compare the resulting voltage measurement to a reference voltage, and to detect the W-band and terahertz radiations based on the comparison.
The system of claim 16 for detecting W-band and terahertz radiations, wherein: the graphene-Si Schottky diode includes a doped silicon substrate, forming a top surface and, opposite from and facing away from the top surface, a bottom surface, the source electrode is arranged above and insulated from the top surface, and the drain electrode is disposed on the bottom surface.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-Si Schottky diode
Materials described outside the worked examples.
graphene monolayer
doped silicon substrate
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 illustrates a scanning electron microscope (SEM) image of a surface of the fabricated graphene-Si Schottky detector, according to an implementation of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-type silicon substrate resistivity (claim 9) | 1–10 Ω·cm | Si |
p-type silicon substrate resistivity (description/summary) | 25–35 Ω·cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,121,926Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an implementation of a method for detecting W-band and terahertz radiations, according to one or more aspects of the present disclosure. …
FIG. 2C illustrates an implementation of a graphene-Si Schottky detector array, according to one implementation of the present disclosure. [002 1] FIG s. 3A-3E …
FIG. 3B. To this end, the first side of the doped silicon substrate 301 may be covered by a photoresist layer and then the doped silicon substrate 301 may be …
FIG. 4 illustrates a scanning electron microscope (SEM) image of a surface of the fabricated graphene-Si Schottky detector, according to an implementation of …
FIG. 5 illustrates a current-voltage (I- V) characteristic curve of a graphene-Si Schottky detector, according to one implementation of the present disclosure. …
FIG. 6 illustrates a setup for evaluating sensitivity of the fabricated graphene-Si Schottky detector to THz radiations, according to one exemplary …
FIG. 7 illustrates calculated responsivity at different temperatures.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting W-band and terahertz radiations, the method comprising: providing a graphene-Si Scho t tky diode that includes a graphene monolayer that at one end area is in Ohmic contact with an upper surface of an electrode above and insulated from a top surface of a doped silicon substrate, and that extends over an edge of the electrode to another end area that contacts the top surface in a manner forming a Scho t tky junction; storing reference current-voltage (I-V) characteristics of the Scho t tky junction in a reverse biased mode; measuring an I -V characteristic of the Schottky junction in the revese biased mode; comparing a result of the measuring to the stored reference I -V characteristic; and based on a result of the comparing, detecting W-band and terahertz radiation.
The method of claim 1 for detecting W-band and terahertz radiations, the method further including: measuring I -V characteristics of the Schottky junction in the reverse biased mode when the Schottky junction is not exposed to any W-band and terahertz radiations, and wherein storing reference I -V characteristics of the Scho t tky junction includes storing a result of the measuring I -V characteristics of the Schottky junction when the Scho t tky junction is not exposed to any W-band and terahertz radiations.
The method of claim 1 for detecting W-band and terahertz radiations, wherein: the top surface includes a first region and a second region, the electrode is supported on an insulating layer disposed on the first region, and the another end area of the graphene monolayer contacts and forms a Schottky junction on the second region of the top surface.
The method of claim 1 for detecting W-band and terahertz radiations, wherein detecting W-band and terahertz radiation includes detecting I -V characteristics of the Scho t tky junction being different from the reference I -V characteristics of the Scho t tky junction.
The method of claim 1 for detecting W-band and terahertz radiations, wherein: the substrate includes a p-type silicon with a resistivity of 1-10 Q.cm.
The method of claim 1 for detecting W-band and terahertz radiations, wherein the electrode is supported on an insulating layer that is disposed on the fi rst region, and the insulating layer includes a S iO 2 layer.
The system of claim 1 8 for de t ecting W-band and terahertz radiations, wherein: the top surface includes a first region and a second region, the source electrode is supported on an insulating la y er disposed on the first region, and the another end area of the graphene monolayer contacts and forms a Scho t tky junction on the second region of the top surface.
A system for detecting W-band and terahertz radiations, the system comprising: a graphene-Si Scho t tky diode associated with a source electrode and a drain electrode; a power source coupled with the source electrode and the drain electrode and con fi gured to apply a reference voltage between the source electrode and the drain electrode; a measurement instrument con fi gured to measure a generated current between the source electrode and the drain electrode; and a processing unit con fi gured to compare the measured generated current with a reference current, and to detect the W-band and terahertz radiations based on the comparison.
The system of claim 11 for detecting W-band and terahertz radiations, wherein: the graphene-Si Schottky diode includes a doped silicon substrate, forming a top surface and, opposite from and facing away from the top surface, a bottom surface, the source electrode is arranged above and insulated from the top surface, and the drain electrode is disposed on the bottom surface.
A system for detecting W-band and terahertz radiations, the system comprising: a graphene-Si Scho t tky diode associated with a source electrode and a drain electrode; a power source coupled with the source electrode and the drain electrode and configured to apply a reference current between the source electrode and the drain electrode; a measurement instrument configured to measure, during the applying the reference current, a resulting voltage between the source electrode and the drain electrode; and a processing unit configured to compare the resulting voltage measurement to a reference voltage, and to detect the W-band and terahertz radiations based on the comparison.
The system of claim 16 for detecting W-band and terahertz radiations, wherein: the graphene-Si Schottky diode includes a doped silicon substrate, forming a top surface and, opposite from and facing away from the top surface, a bottom surface, the source electrode is arranged above and insulated from the top surface, and the drain electrode is disposed on the bottom surface.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-Si Schottky diode
Materials described outside the worked examples.
graphene monolayer
doped silicon substrate
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 illustrates a scanning electron microscope (SEM) image of a surface of the fabricated graphene-Si Schottky detector, according to an implementation of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-type silicon substrate resistivity (claim 9) | 1–10 Ω·cm | Si |
p-type silicon substrate resistivity (description/summary) | 25–35 Ω·cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,121,926Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an implementation of a method for detecting W-band and terahertz radiations, according to one or more aspects of the present disclosure. …
FIG. 2C illustrates an implementation of a graphene-Si Schottky detector array, according to one implementation of the present disclosure. [002 1] FIG s. 3A-3E …
FIG. 3B. To this end, the first side of the doped silicon substrate 301 may be covered by a photoresist layer and then the doped silicon substrate 301 may be …
FIG. 4 illustrates a scanning electron microscope (SEM) image of a surface of the fabricated graphene-Si Schottky detector, according to an implementation of …
FIG. 5 illustrates a current-voltage (I- V) characteristic curve of a graphene-Si Schottky detector, according to one implementation of the present disclosure. …
FIG. 6 illustrates a setup for evaluating sensitivity of the fabricated graphene-Si Schottky detector to THz radiations, according to one exemplary …
FIG. 7 illustrates calculated responsivity at different temperatures.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting W-band and terahertz radiations, the method comprising: providing a graphene-Si Scho t tky diode that includes a graphene monolayer that at one end area is in Ohmic contact with an upper surface of an electrode above and insulated from a top surface of a doped silicon substrate, and that extends over an edge of the electrode to another end area that contacts the top surface in a manner forming a Scho t tky junction; storing reference current-voltage (I-V) characteristics of the Scho t tky junction in a reverse biased mode; measuring an I -V characteristic of the Schottky junction in the revese biased mode; comparing a result of the measuring to the stored reference I -V characteristic; and based on a result of the comparing, detecting W-band and terahertz radiation.
The method of claim 1 for detecting W-band and terahertz radiations, the method further including: measuring I -V characteristics of the Schottky junction in the reverse biased mode when the Schottky junction is not exposed to any W-band and terahertz radiations, and wherein storing reference I -V characteristics of the Scho t tky junction includes storing a result of the measuring I -V characteristics of the Schottky junction when the Scho t tky junction is not exposed to any W-band and terahertz radiations.
The method of claim 1 for detecting W-band and terahertz radiations, wherein: the top surface includes a first region and a second region, the electrode is supported on an insulating layer disposed on the first region, and the another end area of the graphene monolayer contacts and forms a Schottky junction on the second region of the top surface.
The method of claim 1 for detecting W-band and terahertz radiations, wherein detecting W-band and terahertz radiation includes detecting I -V characteristics of the Scho t tky junction being different from the reference I -V characteristics of the Scho t tky junction.
The method of claim 1 for detecting W-band and terahertz radiations, wherein: the substrate includes a p-type silicon with a resistivity of 1-10 Q.cm.
The method of claim 1 for detecting W-band and terahertz radiations, wherein the electrode is supported on an insulating layer that is disposed on the fi rst region, and the insulating layer includes a S iO 2 layer.
The system of claim 1 8 for de t ecting W-band and terahertz radiations, wherein: the top surface includes a first region and a second region, the source electrode is supported on an insulating la y er disposed on the first region, and the another end area of the graphene monolayer contacts and forms a Scho t tky junction on the second region of the top surface.
A system for detecting W-band and terahertz radiations, the system comprising: a graphene-Si Scho t tky diode associated with a source electrode and a drain electrode; a power source coupled with the source electrode and the drain electrode and con fi gured to apply a reference voltage between the source electrode and the drain electrode; a measurement instrument con fi gured to measure a generated current between the source electrode and the drain electrode; and a processing unit con fi gured to compare the measured generated current with a reference current, and to detect the W-band and terahertz radiations based on the comparison.
The system of claim 11 for detecting W-band and terahertz radiations, wherein: the graphene-Si Schottky diode includes a doped silicon substrate, forming a top surface and, opposite from and facing away from the top surface, a bottom surface, the source electrode is arranged above and insulated from the top surface, and the drain electrode is disposed on the bottom surface.
A system for detecting W-band and terahertz radiations, the system comprising: a graphene-Si Scho t tky diode associated with a source electrode and a drain electrode; a power source coupled with the source electrode and the drain electrode and configured to apply a reference current between the source electrode and the drain electrode; a measurement instrument configured to measure, during the applying the reference current, a resulting voltage between the source electrode and the drain electrode; and a processing unit configured to compare the resulting voltage measurement to a reference voltage, and to detect the W-band and terahertz radiations based on the comparison.
The system of claim 16 for detecting W-band and terahertz radiations, wherein: the graphene-Si Schottky diode includes a doped silicon substrate, forming a top surface and, opposite from and facing away from the top surface, a bottom surface, the source electrode is arranged above and insulated from the top surface, and the drain electrode is disposed on the bottom surface.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-Si Schottky diode
Materials described outside the worked examples.
graphene monolayer
doped silicon substrate
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 illustrates a scanning electron microscope (SEM) image of a surface of the fabricated graphene-Si Schottky detector, according to an implementation of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-type silicon substrate resistivity (claim 9) | 1–10 Ω·cm | Si |
p-type silicon substrate resistivity (description/summary) | 25–35 Ω·cm |
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