Rb2Ti2O5: a layered ionic conductor at the sub-micrometer scale

Valerio Digiorgio; Karen Sobnath; Maria Luisa Della Rocca; Clément Barraud; Rémi Federicci; Armel Descamps-Mandine; Brigitte Leridon

doi:10.1063/5.0225828

Paper details

Research paper

Experimental Characterization

Rb₂Ti₂O5: a layered ionic conductor at the sub-micrometer scale

Valerio Digiorgio, Karen Sobnath, Maria Luisa Della Rocca, Clément Barraud et al.

Applied Physics Letters·2024·10.1063/5.0225828·arXiv:2407.15490

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used as the source for exfoliation and as Raman reference.

2 characterizations7 properties3 figures

ExperimentalRb₂Ti₂O₅Studied Material

Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ substrate, measured by AFM and micro-Raman spectroscopy.

1 preparation2 characterizations9 properties2 figures

ExperimentalRb₂Ti₂O₅Studied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅ nanocrystal contacted by Ti/Au electrodes on Si/SiO2.

3 preparations1 characterization2 properties1 figure

ExperimentalRb₂Ti₂O₅Studied MaterialTiCapping Or ContactAuCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric

Materials

Rb₂Ti₂O₅

Studied Material

Also known as

RTO

studied material

SiO₂

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Rb2Ti2O5: a layered ionic conductor at the sub-micrometer scale | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Afm Thickness	average thickness	300nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Afm Thickness	surface roughness	1nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Raman Peak	ν1	466cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν2	540cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν3	647cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν4	897cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Thickness	flake thickness	60nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	145nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	180nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	280nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	390nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	540nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	870nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Transport Response	I-V characteristic	memristive behavior preserved at low dimensional scale	Rb₂Ti₂O₅	Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅	—
Transport Conductivity	single-valued conductivity	0.0001S.cm⁻¹	Rb₂Ti₂O₅	Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅	—
Transport Conductivity	ionic conductivity	0.001S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Transport Conductivity	ionic conductivity	0.0001S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Electronic Conductivity	electronic conductivity upper bound	1e-8S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—

Properties

Type	Label	Value	Material	Sample	Source
Afm Thickness	average thickness	300nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Afm Thickness	surface roughness	1nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Raman Peak	ν1	466cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν2	540cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν3	647cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν4	897cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Thickness	flake thickness	60nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	145nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	180nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	280nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	390nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	540nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	870nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Transport Response	I-V characteristic	memristive behavior preserved at low dimensional scale	Rb₂Ti₂O₅	Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅	—
Transport Conductivity	single-valued conductivity	0.0001S.cm⁻¹	Rb₂Ti₂O₅	Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅	—
Transport Conductivity	ionic conductivity	0.001S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Transport Conductivity	ionic conductivity	0.0001S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Electronic Conductivity	electronic conductivity upper bound	1e-8S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—

Properties

Type	Label	Value	Material	Sample	Source
Afm Thickness	average thickness	300nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Afm Thickness	surface roughness	1nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Raman Peak	ν1	466cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν2	540cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν3	647cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν4	897cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Thickness	flake thickness	60nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	145nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	180nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	280nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	390nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	540nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	870nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Transport Response	I-V characteristic	memristive behavior preserved at low dimensional scale	Rb₂Ti₂O₅	Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅	—
Transport Conductivity	single-valued conductivity	0.0001S.cm⁻¹	Rb₂Ti₂O₅	Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅	—
Transport Conductivity	ionic conductivity	0.001S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Transport Conductivity	ionic conductivity	0.0001S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Electronic Conductivity	electronic conductivity upper bound	1e-8S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—

Properties

Type	Label	Value	Material	Sample	Source
Afm Thickness	average thickness	300nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Afm Thickness	surface roughness	1nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Raman Peak	ν1	466cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν2	540cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν3	647cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Raman Peak	ν4	897cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Thickness	flake thickness	60nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	145nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	180nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	280nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	390nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	540nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Thickness	flake thickness	870nm	Rb₂Ti₂O₅	Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ subs	—
Transport Response	I-V characteristic	memristive behavior preserved at low dimensional scale	Rb₂Ti₂O₅	Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅	—
Transport Conductivity	single-valued conductivity	0.0001S.cm⁻¹	Rb₂Ti₂O₅	Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅	—
Transport Conductivity	ionic conductivity	0.001S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Transport Conductivity	ionic conductivity	0.0001S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—
Electronic Conductivity	electronic conductivity upper bound	1e-8S.cm⁻¹	Rb₂Ti₂O₅	Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used	—

Rb₂Ti₂O5: a layered ionic conductor at the sub-micrometer scale

Samples

Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used as the source for exfoliation and as Raman reference.

Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ substrate, measured by AFM and micro-Raman spectroscopy.

Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅ nanocrystal contacted by Ti/Au electrodes on Si/SiO2.

Materials

Why these are connected

Rb₂Ti₂O5: a layered ionic conductor at the sub-micrometer scale

Samples

Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used as the source for exfoliation and as Raman reference.

Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ substrate, measured by AFM and micro-Raman spectroscopy.

Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅ nanocrystal contacted by Ti/Au electrodes on Si/SiO2.

Materials

Why these are connected

Rb₂Ti₂O5: a layered ionic conductor at the sub-micrometer scale

Samples

Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used as the source for exfoliation and as Raman reference.

Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ substrate, measured by AFM and micro-Raman spectroscopy.

Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅ nanocrystal contacted by Ti/Au electrodes on Si/SiO2.

Materials

Why these are connected

Rb₂Ti₂O5: a layered ionic conductor at the sub-micrometer scale

Samples

Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used as the source for exfoliation and as Raman reference.

Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ substrate, measured by AFM and micro-Raman spectroscopy.

Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅ nanocrystal contacted by Ti/Au electrodes on Si/SiO2.

Materials

Why these are connected

Rb₂Ti₂O5: a layered ionic conductor at the sub-micrometer scale

Samples

Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used as the source for exfoliation and as Raman reference.

Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ substrate, measured by AFM and micro-Raman spectroscopy.

Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅ nanocrystal contacted by Ti/Au electrodes on Si/SiO2.

Materials

Why these are connected

Rb₂Ti₂O5: a layered ionic conductor at the sub-micrometer scale

Samples

Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used as the source for exfoliation and as Raman reference.

Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ substrate, measured by AFM and micro-Raman spectroscopy.

Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅ nanocrystal contacted by Ti/Au electrodes on Si/SiO2.

Materials

Why these are connected

Rb₂Ti₂O5: a layered ionic conductor at the sub-micrometer scale

Samples

Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used as the source for exfoliation and as Raman reference.

Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ substrate, measured by AFM and micro-Raman spectroscopy.

Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅ nanocrystal contacted by Ti/Au electrodes on Si/SiO2.

Materials

Why these are connected

Rb₂Ti₂O5: a layered ionic conductor at the sub-micrometer scale

Samples

Bulk Rb₂Ti₂O₅ single crystal grown from TiO₂ and RbNO3, used as the source for exfoliation and as Raman reference.

Mechanically exfoliated Rb₂Ti₂O₅ nanocrystal on Si/SiO₂ substrate, measured by AFM and micro-Raman spectroscopy.

Lateral two-terminal device based on an exfoliated Rb₂Ti₂O₅ nanocrystal contacted by Ti/Au electrodes on Si/SiO2.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties