Patent
US 8,471,237OF THE INVENTION
Makoto Okai
US
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Patent
Atlas literature
Patent
US 8,471,237Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit board having a graphene circuit, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A lz2xO₃+x (where x is 0 or more), the patterned aluminum oxide film having a recessed region whose surface has a flat surface and has one or more cone-shaped recesses therein; a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film having a contact region that covers the recessed region, the graphene film growing parallel to thea flat surface of the recessed region and parallel to an inner wall surface of each cone-shaped recess of the recessed region; and a patterned metal film, an entirety of the contact re g ion bein g covered by a part of the patterned metal film eeverng -and having electrical contact directly with the p atterned metal film Gsta- e-, the patterned metal film filling each recess covered by the graphene film.
The circuit board according to claim 1, wherein a ratio of a depth of each recess to a mouth diameter of the recess is 1.5 to 10.
The circuit board according to claim 1, wherein regions of the patterned aluminum oxide film other than the one or more recesses of the 3 Docket No. 520.51377X00 Appin. No. 13/013,984 recessed region of the patterned aluminum oxide film have an average thickness of 10 to 500 nm.
The circuit board according to claim 1, wherein a ratio of a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film to a projected area of the contact region is 3 to 20.
The circuit board according to claim 1, wherein a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film satisfies the following relationship of Equation (1): cothK S2<1.3... Equation (1) where rgp (in units of Q/pm2) denotes electrical resistance per unit area of the graphene film, r c (in units of 52p m2) denotes contact resistance per unit area between the graphene film and the patterned metal film, and S (in units of p m2) denotes the contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film.
The circuit board according to claim 1, wherein a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film satisfies the following relationship of Equation (2): cothK s2<l.1... Equation (2) where rgp (in units of Q/pm2) denotes electrical resistance per unit area of the graphene film, r c (in units of 52p m2) denotes contact resistance per unit area between 4 Docket No. 520.51377X00 Appin. No. 13/013,984 the graphene film and the patterned metal film, and S (in units of p m2) denotes the contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film.
A device, including the circuit board according to claim 1, wherein at least one of component parts comprising a channel of a field effect transistor, an optical emitting element, an optical receiving element and a wiring line is formed in the graphene film.
The circuit board according to claim 1, wherein the patterned aluminum oxide film has an arithmetic mean surface roughness Ra of 1 nm or less.
Layer stacks claimed or described, ordered top of device to substrate.
graphene circuit board
field-effect transistor with graphene channel
Materials described outside the worked examples.
graphene film
C
patterned aluminum oxide film
Al₂-xO₃+x
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
arithmetic mean surface roughness Ra of aluminum oxide film (claimed upper limit) | ≤ 1 nm | Al₂-xO₃+x |
maximum surface height Rz of aluminum oxide film (claimed upper limit) | ≤ 10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,471,237Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit board having a graphene circuit, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A lz2xO₃+x (where x is 0 or more), the patterned aluminum oxide film having a recessed region whose surface has a flat surface and has one or more cone-shaped recesses therein; a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film having a contact region that covers the recessed region, the graphene film growing parallel to thea flat surface of the recessed region and parallel to an inner wall surface of each cone-shaped recess of the recessed region; and a patterned metal film, an entirety of the contact re g ion bein g covered by a part of the patterned metal film eeverng -and having electrical contact directly with the p atterned metal film Gsta- e-, the patterned metal film filling each recess covered by the graphene film.
The circuit board according to claim 1, wherein a ratio of a depth of each recess to a mouth diameter of the recess is 1.5 to 10.
The circuit board according to claim 1, wherein regions of the patterned aluminum oxide film other than the one or more recesses of the 3 Docket No. 520.51377X00 Appin. No. 13/013,984 recessed region of the patterned aluminum oxide film have an average thickness of 10 to 500 nm.
The circuit board according to claim 1, wherein a ratio of a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film to a projected area of the contact region is 3 to 20.
The circuit board according to claim 1, wherein a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film satisfies the following relationship of Equation (1): cothK S2<1.3... Equation (1) where rgp (in units of Q/pm2) denotes electrical resistance per unit area of the graphene film, r c (in units of 52p m2) denotes contact resistance per unit area between the graphene film and the patterned metal film, and S (in units of p m2) denotes the contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film.
The circuit board according to claim 1, wherein a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film satisfies the following relationship of Equation (2): cothK s2<l.1... Equation (2) where rgp (in units of Q/pm2) denotes electrical resistance per unit area of the graphene film, r c (in units of 52p m2) denotes contact resistance per unit area between 4 Docket No. 520.51377X00 Appin. No. 13/013,984 the graphene film and the patterned metal film, and S (in units of p m2) denotes the contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film.
A device, including the circuit board according to claim 1, wherein at least one of component parts comprising a channel of a field effect transistor, an optical emitting element, an optical receiving element and a wiring line is formed in the graphene film.
The circuit board according to claim 1, wherein the patterned aluminum oxide film has an arithmetic mean surface roughness Ra of 1 nm or less.
Layer stacks claimed or described, ordered top of device to substrate.
graphene circuit board
field-effect transistor with graphene channel
Materials described outside the worked examples.
graphene film
C
patterned aluminum oxide film
Al₂-xO₃+x
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
arithmetic mean surface roughness Ra of aluminum oxide film (claimed upper limit) | ≤ 1 nm | Al₂-xO₃+x |
maximum surface height Rz of aluminum oxide film (claimed upper limit) | ≤ 10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,471,237Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit board having a graphene circuit, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A lz2xO₃+x (where x is 0 or more), the patterned aluminum oxide film having a recessed region whose surface has a flat surface and has one or more cone-shaped recesses therein; a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film having a contact region that covers the recessed region, the graphene film growing parallel to thea flat surface of the recessed region and parallel to an inner wall surface of each cone-shaped recess of the recessed region; and a patterned metal film, an entirety of the contact re g ion bein g covered by a part of the patterned metal film eeverng -and having electrical contact directly with the p atterned metal film Gsta- e-, the patterned metal film filling each recess covered by the graphene film.
The circuit board according to claim 1, wherein a ratio of a depth of each recess to a mouth diameter of the recess is 1.5 to 10.
The circuit board according to claim 1, wherein regions of the patterned aluminum oxide film other than the one or more recesses of the 3 Docket No. 520.51377X00 Appin. No. 13/013,984 recessed region of the patterned aluminum oxide film have an average thickness of 10 to 500 nm.
The circuit board according to claim 1, wherein a ratio of a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film to a projected area of the contact region is 3 to 20.
The circuit board according to claim 1, wherein a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film satisfies the following relationship of Equation (1): cothK S2<1.3... Equation (1) where rgp (in units of Q/pm2) denotes electrical resistance per unit area of the graphene film, r c (in units of 52p m2) denotes contact resistance per unit area between the graphene film and the patterned metal film, and S (in units of p m2) denotes the contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film.
The circuit board according to claim 1, wherein a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film satisfies the following relationship of Equation (2): cothK s2<l.1... Equation (2) where rgp (in units of Q/pm2) denotes electrical resistance per unit area of the graphene film, r c (in units of 52p m2) denotes contact resistance per unit area between 4 Docket No. 520.51377X00 Appin. No. 13/013,984 the graphene film and the patterned metal film, and S (in units of p m2) denotes the contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film.
A device, including the circuit board according to claim 1, wherein at least one of component parts comprising a channel of a field effect transistor, an optical emitting element, an optical receiving element and a wiring line is formed in the graphene film.
The circuit board according to claim 1, wherein the patterned aluminum oxide film has an arithmetic mean surface roughness Ra of 1 nm or less.
Layer stacks claimed or described, ordered top of device to substrate.
graphene circuit board
field-effect transistor with graphene channel
Materials described outside the worked examples.
graphene film
C
patterned aluminum oxide film
Al₂-xO₃+x
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
arithmetic mean surface roughness Ra of aluminum oxide film (claimed upper limit) | ≤ 1 nm | Al₂-xO₃+x |
maximum surface height Rz of aluminum oxide film (claimed upper limit) | ≤ 10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,471,237Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit board having a graphene circuit, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A lz2xO₃+x (where x is 0 or more), the patterned aluminum oxide film having a recessed region whose surface has a flat surface and has one or more cone-shaped recesses therein; a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film having a contact region that covers the recessed region, the graphene film growing parallel to thea flat surface of the recessed region and parallel to an inner wall surface of each cone-shaped recess of the recessed region; and a patterned metal film, an entirety of the contact re g ion bein g covered by a part of the patterned metal film eeverng -and having electrical contact directly with the p atterned metal film Gsta- e-, the patterned metal film filling each recess covered by the graphene film.
The circuit board according to claim 1, wherein a ratio of a depth of each recess to a mouth diameter of the recess is 1.5 to 10.
The circuit board according to claim 1, wherein regions of the patterned aluminum oxide film other than the one or more recesses of the 3 Docket No. 520.51377X00 Appin. No. 13/013,984 recessed region of the patterned aluminum oxide film have an average thickness of 10 to 500 nm.
The circuit board according to claim 1, wherein a ratio of a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film to a projected area of the contact region is 3 to 20.
The circuit board according to claim 1, wherein a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film satisfies the following relationship of Equation (1): cothK S2<1.3... Equation (1) where rgp (in units of Q/pm2) denotes electrical resistance per unit area of the graphene film, r c (in units of 52p m2) denotes contact resistance per unit area between the graphene film and the patterned metal film, and S (in units of p m2) denotes the contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film.
The circuit board according to claim 1, wherein a contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film satisfies the following relationship of Equation (2): cothK s2<l.1... Equation (2) where rgp (in units of Q/pm2) denotes electrical resistance per unit area of the graphene film, r c (in units of 52p m2) denotes contact resistance per unit area between 4 Docket No. 520.51377X00 Appin. No. 13/013,984 the graphene film and the patterned metal film, and S (in units of p m2) denotes the contact area between the graphene film of the contact region and the patterned metal film overlying the graphene film.
A device, including the circuit board according to claim 1, wherein at least one of component parts comprising a channel of a field effect transistor, an optical emitting element, an optical receiving element and a wiring line is formed in the graphene film.
The circuit board according to claim 1, wherein the patterned aluminum oxide film has an arithmetic mean surface roughness Ra of 1 nm or less.
Layer stacks claimed or described, ordered top of device to substrate.
graphene circuit board
field-effect transistor with graphene channel
Materials described outside the worked examples.
graphene film
C
patterned aluminum oxide film
Al₂-xO₃+x
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
arithmetic mean surface roughness Ra of aluminum oxide film (claimed upper limit) | ≤ 1 nm | Al₂-xO₃+x |
maximum surface height Rz of aluminum oxide film (claimed upper limit) | ≤ 10 nm |
Related documents with shared materials, methods, properties, or citations.
patterned metal film
silicon oxide film
SiO₂
single crystalline silicon substrate
Si
Al₂-xO₃+x |
average thickness of patterned aluminum oxide film (non-recessed regions) | 10–500 nm | Al₂-xO₃+x |
ratio of contact area (graphene/metal) to projected area of contact region | 3–20 dimensionless | — |
ratio of depth to mouth diameter of each cone-shaped recess | 1.5–10 dimensionless | Al₂-xO₃+x |
Thickness | 400–2000 nm | — |
Thickness | 20–300 nm | — |
Thickness | 0.3–0.34 nm | — |
Pressure | ≤ 20 pA | — |
Pressure | ≤ 5 pA | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 500 nm | — |
patterned metal film
silicon oxide film
SiO₂
single crystalline silicon substrate
Si
Al₂-xO₃+x |
average thickness of patterned aluminum oxide film (non-recessed regions) | 10–500 nm | Al₂-xO₃+x |
ratio of contact area (graphene/metal) to projected area of contact region | 3–20 dimensionless | — |
ratio of depth to mouth diameter of each cone-shaped recess | 1.5–10 dimensionless | Al₂-xO₃+x |
Thickness | 400–2000 nm | — |
Thickness | 20–300 nm | — |
Thickness | 0.3–0.34 nm | — |
Pressure | ≤ 20 pA | — |
Pressure | ≤ 5 pA | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 500 nm | — |
patterned metal film
silicon oxide film
SiO₂
single crystalline silicon substrate
Si
Al₂-xO₃+x |
average thickness of patterned aluminum oxide film (non-recessed regions) | 10–500 nm | Al₂-xO₃+x |
ratio of contact area (graphene/metal) to projected area of contact region | 3–20 dimensionless | — |
ratio of depth to mouth diameter of each cone-shaped recess | 1.5–10 dimensionless | Al₂-xO₃+x |
Thickness | 400–2000 nm | — |
Thickness | 20–300 nm | — |
Thickness | 0.3–0.34 nm | — |
Pressure | ≤ 20 pA | — |
Pressure | ≤ 5 pA | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 500 nm | — |
patterned metal film
silicon oxide film
SiO₂
single crystalline silicon substrate
Si
Al₂-xO₃+x |
average thickness of patterned aluminum oxide film (non-recessed regions) | 10–500 nm | Al₂-xO₃+x |
ratio of contact area (graphene/metal) to projected area of contact region | 3–20 dimensionless | — |
ratio of depth to mouth diameter of each cone-shaped recess | 1.5–10 dimensionless | Al₂-xO₃+x |
Thickness | 400–2000 nm | — |
Thickness | 20–300 nm | — |
Thickness | 0.3–0.34 nm | — |
Pressure | ≤ 20 pA | — |
Pressure | ≤ 5 pA | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 500 nm | — |