Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation

Huan Zhao; Linghan Zhu; Xiangzhi Li; Vigneshwaran Chandrasekaran; Jon Kevin Baldwin; Michael T. Pettes; Andrei Piryatinski; Li Yang; Han Htoon

doi:10.48550/arxiv.2205.02472

Paper details

Research paper

Experimental CharacterizationComputational DFT

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation

Huan Zhao, Linghan Zhu, Xiangzhi Li, Vigneshwaran Chandrasekaran et al.

2025·10.48550/arxiv.2205.02472·arXiv:2205.02472

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated directly on a gold substrate; used to generate defect-bound interlayer exciton emission.

2 preparations5 characterizations6 properties3 figures

ExperimentalMoS₂Studied MaterialWSe₂Studied MaterialAuCapping Or Contactnanopillar dielectricSubstrate / Dielectric

MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillars fabricated on gold; used to suppress defect generation and recover K-K IX emission.

2 preparations5 characterizations2 properties3 figures

ExperimentalMoS₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricAuCapping Or Contactnanopillar dielectricSubstrate / Dielectric

Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric nanopillars fabricated directly on a gold substrate; used to tune defect-bound IX emission to lower energy.

2 preparations4 characterizations2 properties3 figures

ExperimentalMoS₂Studied MaterialWSe₂Studied MaterialAuCapping Or Contactnanopillar dielectricSubstrate / Dielectric

Materials

MoS₂

Studied Material

studied material

WSe₂

Studied Material

studied material

hBN

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Strain	average strain	0.27%	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillar Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric n	—
PL Peak	Γ-defect IX	1.35eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	Γ-defect IX	1.26eV	MoS₂ WSe₂	Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric n	—
PL Peak	K-K IX	1eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillar	—
Pl Lifetime	TRPL lifetime	18.45ns	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
Fet On Off Ratio	g(2)(0)	0.01	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	K-K IX (reference/common emission energy)	1.0eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	Γ-K IX (reference/common emission energy)	1.57eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—

Properties

Type	Label	Value	Material	Sample	Source
Strain	average strain	0.27%	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillar Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric n	—
PL Peak	Γ-defect IX	1.35eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	Γ-defect IX	1.26eV	MoS₂ WSe₂	Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric n	—
PL Peak	K-K IX	1eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillar	—
Pl Lifetime	TRPL lifetime	18.45ns	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
Fet On Off Ratio	g(2)(0)	0.01	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	K-K IX (reference/common emission energy)	1.0eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	Γ-K IX (reference/common emission energy)	1.57eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—

Properties

Type	Label	Value	Material	Sample	Source
Strain	average strain	0.27%	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillar Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric n	—
PL Peak	Γ-defect IX	1.35eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	Γ-defect IX	1.26eV	MoS₂ WSe₂	Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric n	—
PL Peak	K-K IX	1eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillar	—
Pl Lifetime	TRPL lifetime	18.45ns	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
Fet On Off Ratio	g(2)(0)	0.01	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	K-K IX (reference/common emission energy)	1.0eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	Γ-K IX (reference/common emission energy)	1.57eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—

Properties

Type	Label	Value	Material	Sample	Source
Strain	average strain	0.27%	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillar Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric n	—
PL Peak	Γ-defect IX	1.35eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	Γ-defect IX	1.26eV	MoS₂ WSe₂	Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric n	—
PL Peak	K-K IX	1eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillar	—
Pl Lifetime	TRPL lifetime	18.45ns	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
Fet On Off Ratio	g(2)(0)	0.01	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	K-K IX (reference/common emission energy)	1.0eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—
PL Peak	Γ-K IX (reference/common emission energy)	1.57eV	MoS₂ WSe₂	MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated	—

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation

Samples

MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated directly on a gold substrate; used to generate defect-bound interlayer exciton emission.

MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillars fabricated on gold; used to suppress defect generation and recover K-K IX emission.

Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric nanopillars fabricated directly on a gold substrate; used to tune defect-bound IX emission to lower energy.

Materials

Why these are connected

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation

Samples

MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated directly on a gold substrate; used to generate defect-bound interlayer exciton emission.

MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillars fabricated on gold; used to suppress defect generation and recover K-K IX emission.

Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric nanopillars fabricated directly on a gold substrate; used to tune defect-bound IX emission to lower energy.

Materials

Why these are connected

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation

Samples

MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated directly on a gold substrate; used to generate defect-bound interlayer exciton emission.

MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillars fabricated on gold; used to suppress defect generation and recover K-K IX emission.

Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric nanopillars fabricated directly on a gold substrate; used to tune defect-bound IX emission to lower energy.

Materials

Why these are connected

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation

Samples

MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated directly on a gold substrate; used to generate defect-bound interlayer exciton emission.

MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillars fabricated on gold; used to suppress defect generation and recover K-K IX emission.

Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric nanopillars fabricated directly on a gold substrate; used to tune defect-bound IX emission to lower energy.

Materials

Why these are connected

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation

Samples

MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated directly on a gold substrate; used to generate defect-bound interlayer exciton emission.

MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillars fabricated on gold; used to suppress defect generation and recover K-K IX emission.

Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric nanopillars fabricated directly on a gold substrate; used to tune defect-bound IX emission to lower energy.

Materials

Why these are connected

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation

Samples

MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated directly on a gold substrate; used to generate defect-bound interlayer exciton emission.

MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillars fabricated on gold; used to suppress defect generation and recover K-K IX emission.

Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric nanopillars fabricated directly on a gold substrate; used to tune defect-bound IX emission to lower energy.

Materials

Why these are connected

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation

Samples

MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated directly on a gold substrate; used to generate defect-bound interlayer exciton emission.

MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillars fabricated on gold; used to suppress defect generation and recover K-K IX emission.

Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric nanopillars fabricated directly on a gold substrate; used to tune defect-bound IX emission to lower energy.

Materials

Why these are connected

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation

Samples

MoS₂/WSe₂ heterobilayer on dielectric nanopillars fabricated directly on a gold substrate; used to generate defect-bound interlayer exciton emission.

MoS₂/WSe₂ heterobilayer on 5 nm hBN on dielectric nanopillars fabricated on gold; used to suppress defect generation and recover K-K IX emission.

Bilayer-MoS₂ / monolayer-WSe₂ heterotrilayer on dielectric nanopillars fabricated directly on a gold substrate; used to tune defect-bound IX emission to lower energy.

Materials

Why these are connected

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