Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers

Memansa Thapa; Aksa Thomas; Jayalekshmi U. J.; Krishna Prasad Bera; Darshit Solanki; Kenji Watanabe; Takashi Taniguchi; Ajay Kumar Shukla; Anindya Das; Ajay Soni

doi:10.1063/5.0024651

Paper details

Research paper

Experimental Characterization

Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe₂ Bilayers

Memansa Thapa, Aksa Thomas, Jayalekshmi U. J., Krishna Prasad Bera et al.

2026·10.1063/5.0024651·arXiv:2606.02131

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mechanically exfoliated and assembled by dry transfer.

1 preparation2 characterizations6 properties2 figures

ExperimentalWSe₂Studied MaterialhBNSubstrate / Dielectric

Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K.

1 preparation2 characterizations7 properties2 figures

ExperimentalWSe₂Studied MaterialhBNSubstrate / Dielectric

Artificial bilayer WSe₂ fabricated by stacking two monolayers with twist angle ~60° and encapsulated in hBN; measured at 3 K.

1 preparation2 characterizations9 properties2 figures

ExperimentalWSe₂Studied MaterialhBNSubstrate / Dielectric

Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hBN; measured at 3 K.

1 preparation2 characterizations9 properties2 figures

ExperimentalWSe₂Studied MaterialhBNSubstrate / Dielectric

Materials

WSe₂

Studied Material

Also known as

tungsten diselenide

studied material

hexagonal boron nitride

hBN

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	A1g/E2g mixed mode	250cm⁻¹	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
Raman Peak	2LA(M)	260cm⁻¹	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
Raman Peak	2g	310cm⁻¹	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X₀	1.73eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	X-	1.5eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	XX-	1.5eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	D₁	1.65eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	X₀	1.63eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	X-	1.6eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	XI	1.56eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	D₁	1.52eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	XM	1.74eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	X₀	1.72eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	X-	1.69eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	XI	1.65eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	Xp₁I	1.63eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	Xp₂I	1.61eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	XM	1.74eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X₀	1.72eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X-	1.69eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	XI	1.65eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	Xp₁I	1.63eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	Xp₂I	1.61eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	A1g/E2g mixed mode	250cm⁻¹	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
Raman Peak	2LA(M)	260cm⁻¹	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
Raman Peak	2g	310cm⁻¹	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X₀	1.73eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	X-	1.5eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	XX-	1.5eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	D₁	1.65eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	X₀	1.63eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	X-	1.6eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	XI	1.56eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	D₁	1.52eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	XM	1.74eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	X₀	1.72eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	X-	1.69eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	XI	1.65eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	Xp₁I	1.63eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	Xp₂I	1.61eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	XM	1.74eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X₀	1.72eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X-	1.69eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	XI	1.65eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	Xp₁I	1.63eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	Xp₂I	1.61eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	A1g/E2g mixed mode	250cm⁻¹	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
Raman Peak	2LA(M)	260cm⁻¹	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
Raman Peak	2g	310cm⁻¹	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X₀	1.73eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	X-	1.5eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	XX-	1.5eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	D₁	1.65eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	X₀	1.63eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	X-	1.6eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	XI	1.56eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	D₁	1.52eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	XM	1.74eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	X₀	1.72eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	X-	1.69eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	XI	1.65eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	Xp₁I	1.63eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	Xp₂I	1.61eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	XM	1.74eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X₀	1.72eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X-	1.69eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	XI	1.65eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	Xp₁I	1.63eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	Xp₂I	1.61eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	A1g/E2g mixed mode	250cm⁻¹	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
Raman Peak	2LA(M)	260cm⁻¹	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
Raman Peak	2g	310cm⁻¹	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K Artificial bilayer WSe₂ fabricated by stacking two monolayer Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X₀	1.73eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	X-	1.5eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	XX-	1.5eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	D₁	1.65eV	WSe₂	Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mech	—
PL Peak	X₀	1.63eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	X-	1.6eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	XI	1.56eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	D₁	1.52eV	WSe₂	Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K	—
PL Peak	XM	1.74eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	X₀	1.72eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	X-	1.69eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	XI	1.65eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	Xp₁I	1.63eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	Xp₂I	1.61eV	WSe₂	Artificial bilayer WSe₂ fabricated by stacking two monolayer	—
PL Peak	XM	1.74eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X₀	1.72eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	X-	1.69eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	XI	1.65eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	Xp₁I	1.63eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—
PL Peak	Xp₂I	1.61eV	WSe₂	Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hB	—

Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe₂ Bilayers

Samples

Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mechanically exfoliated and assembled by dry transfer.

Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K.

Artificial bilayer WSe₂ fabricated by stacking two monolayers with twist angle ~60° and encapsulated in hBN; measured at 3 K.

Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hBN; measured at 3 K.

Materials

Why these are connected

Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe₂ Bilayers

Samples

Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mechanically exfoliated and assembled by dry transfer.

Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K.

Artificial bilayer WSe₂ fabricated by stacking two monolayers with twist angle ~60° and encapsulated in hBN; measured at 3 K.

Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hBN; measured at 3 K.

Materials

Why these are connected

Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe₂ Bilayers

Samples

Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mechanically exfoliated and assembled by dry transfer.

Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K.

Artificial bilayer WSe₂ fabricated by stacking two monolayers with twist angle ~60° and encapsulated in hBN; measured at 3 K.

Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hBN; measured at 3 K.

Materials

Why these are connected

Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe₂ Bilayers

Samples

Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mechanically exfoliated and assembled by dry transfer.

Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K.

Artificial bilayer WSe₂ fabricated by stacking two monolayers with twist angle ~60° and encapsulated in hBN; measured at 3 K.

Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hBN; measured at 3 K.

Materials

Why these are connected

Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe₂ Bilayers

Samples

Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mechanically exfoliated and assembled by dry transfer.

Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K.

Artificial bilayer WSe₂ fabricated by stacking two monolayers with twist angle ~60° and encapsulated in hBN; measured at 3 K.

Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hBN; measured at 3 K.

Materials

Why these are connected

Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe₂ Bilayers

Samples

Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mechanically exfoliated and assembled by dry transfer.

Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K.

Artificial bilayer WSe₂ fabricated by stacking two monolayers with twist angle ~60° and encapsulated in hBN; measured at 3 K.

Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hBN; measured at 3 K.

Materials

Why these are connected

Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe₂ Bilayers

Samples

Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mechanically exfoliated and assembled by dry transfer.

Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K.

Artificial bilayer WSe₂ fabricated by stacking two monolayers with twist angle ~60° and encapsulated in hBN; measured at 3 K.

Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hBN; measured at 3 K.

Materials

Why these are connected

Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe₂ Bilayers

Samples

Monolayer WSe₂ encapsulated in hBN and measured at 3 K; mechanically exfoliated and assembled by dry transfer.

Natural bilayer WSe₂ encapsulated in hBN and measured at 3 K.

Artificial bilayer WSe₂ fabricated by stacking two monolayers with twist angle ~60° and encapsulated in hBN; measured at 3 K.

Twisted WSe₂ bilayer with twist angle ~2° encapsulated in hBN; measured at 3 K.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties