Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material

Paper details

Research paper

Experimental CharacterizationComputational DFT

Arka Karmakar, Tomasz Kazimierczuk, Igor Antoniazzi, Mateusz Raczyński et al.

2025·10.1126/science.1235547·arXiv:2301.05644

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

3 characterizations3 properties11 figures

ExperimentalMoS₂Studied MaterialWSe₂Studied MaterialBNSubstrate / Dielectric

1 characterization1 figure

ExperimentalMoS₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricSiO₂Substrate / Dielectric

3 characterizations11 figures

ExperimentalMoS₂Studied Material

3 characterizations11 figures

ExperimentalWSe₂Studied Material

2 characterizations2 figures

Simulated Supercell DftMoS₂Studied MaterialWSe₂Studied Material

2 characterizations2 figures

Simulated Supercell DftMoS₂Studied MaterialWSe₂Studied Material

MoS₂

Studied Material

studied material

WSe₂

Studied Material

studied material

hBN

Related documents with shared materials, methods, properties, or citations.

Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Substrate Thickness	interlayer hBN thickness	9nm	BN	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—
Pl Peak Intensity	MoS₂ PL enhancement factor	1.9	MoS₂	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—
Pl Peak Intensity	MoS₂ PL enhancement factor	1.7	MoS₂	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	interlayer hBN thickness	9nm	BN	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—
Pl Peak Intensity	MoS₂ PL enhancement factor	1.9	MoS₂	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—
Pl Peak Intensity	MoS₂ PL enhancement factor	1.7	MoS₂	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	interlayer hBN thickness	9nm	BN	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—
Pl Peak Intensity	MoS₂ PL enhancement factor	1.9	MoS₂	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—
Pl Peak Intensity	MoS₂ PL enhancement factor	1.7	MoS₂	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	interlayer hBN thickness	9nm	BN	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—
Pl Peak Intensity	MoS₂ PL enhancement factor	1.9	MoS₂	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—
Pl Peak Intensity	MoS₂ PL enhancement factor	1.7	MoS₂	Fabricated MoS₂-hBN-WSe₂ heterostructure with an approximate	—