Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

E. Katsipoulaki; N.G. Chatzarakis; E. Rigoutsou; D. Katrisioti; T. Taniguchi; K. Watanabe; S. Psilodimitrakopoulos; N.T. Pelekanos; I. Paradisanos

doi:10.48550/arXiv.2606.04675

Paper details

Research paper

Experimental Characterization

Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

E. Katsipoulaki, N.G. Chatzarakis, E. Rigoutsou, D. Katrisioti et al.

arXiv preprint·2026·arXiv:2606.04675

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.

1 preparation1 characterization1 property2 figures

ExperimentalMoSe₂Studied Material

Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.

1 preparation1 characterization2 properties2 figures

ExperimentalMoS1.4Se0.6Studied Material

MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.

2 preparations5 characterizations8 properties3 figures

ExperimentalMoS1.4Se0.6Studied MaterialMoSe₂Studied MaterialhBNSubstrate / Dielectric

Materials

MoS1.4Se0.6

Studied Material

Also known as

MoS1.4Se0.6 alloy

studied material

MoSe₂

Studied Material

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Twist Angle	mean twist angle	3.2deg	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
PL Peak	XA	1.64eV	MoSe₂	Monolayer MoSe₂ flake measured by low-temperature PL and rel	—
PL Peak	XA	1.87eV	MoS1.4Se0.6	Monolayer MoS1.4Se0.6 flake measured by low-temperature PL a	—
PL Peak	defect	1.68eV	MoS1.4Se0.6	Monolayer MoS1.4Se0.6 flake measured by low-temperature PL a	—
PL Peak	IX	1.4eV	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Intensity Power Law Exponent	low excitation power exponent	0.4	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Intensity Power Law Exponent	high excitation power exponent	0.3	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Peak Shift	IX emission shift with increasing power	blueshift	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Lifetime	fast component	374ps	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Lifetime	slow component	49ns	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
PL Peak	IX excitation-response peak	1.4eV	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—

Properties

Type	Label	Value	Material	Sample	Source
Twist Angle	mean twist angle	3.2deg	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
PL Peak	XA	1.64eV	MoSe₂	Monolayer MoSe₂ flake measured by low-temperature PL and rel	—
PL Peak	XA	1.87eV	MoS1.4Se0.6	Monolayer MoS1.4Se0.6 flake measured by low-temperature PL a	—
PL Peak	defect	1.68eV	MoS1.4Se0.6	Monolayer MoS1.4Se0.6 flake measured by low-temperature PL a	—
PL Peak	IX	1.4eV	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Intensity Power Law Exponent	low excitation power exponent	0.4	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Intensity Power Law Exponent	high excitation power exponent	0.3	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Peak Shift	IX emission shift with increasing power	blueshift	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Lifetime	fast component	374ps	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Lifetime	slow component	49ns	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
PL Peak	IX excitation-response peak	1.4eV	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—

Properties

Type	Label	Value	Material	Sample	Source
Twist Angle	mean twist angle	3.2deg	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
PL Peak	XA	1.64eV	MoSe₂	Monolayer MoSe₂ flake measured by low-temperature PL and rel	—
PL Peak	XA	1.87eV	MoS1.4Se0.6	Monolayer MoS1.4Se0.6 flake measured by low-temperature PL a	—
PL Peak	defect	1.68eV	MoS1.4Se0.6	Monolayer MoS1.4Se0.6 flake measured by low-temperature PL a	—
PL Peak	IX	1.4eV	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Intensity Power Law Exponent	low excitation power exponent	0.4	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Intensity Power Law Exponent	high excitation power exponent	0.3	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Peak Shift	IX emission shift with increasing power	blueshift	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Lifetime	fast component	374ps	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Lifetime	slow component	49ns	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
PL Peak	IX excitation-response peak	1.4eV	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—

Properties

Type	Label	Value	Material	Sample	Source
Twist Angle	mean twist angle	3.2deg	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
PL Peak	XA	1.64eV	MoSe₂	Monolayer MoSe₂ flake measured by low-temperature PL and rel	—
PL Peak	XA	1.87eV	MoS1.4Se0.6	Monolayer MoS1.4Se0.6 flake measured by low-temperature PL a	—
PL Peak	defect	1.68eV	MoS1.4Se0.6	Monolayer MoS1.4Se0.6 flake measured by low-temperature PL a	—
PL Peak	IX	1.4eV	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Intensity Power Law Exponent	low excitation power exponent	0.4	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Intensity Power Law Exponent	high excitation power exponent	0.3	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Peak Shift	IX emission shift with increasing power	blueshift	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Lifetime	fast component	374ps	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
Pl Lifetime	slow component	49ns	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—
PL Peak	IX excitation-response peak	1.4eV	MoS1.4Se0.6 MoSe₂	MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used fo	—

Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

Samples

Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.

Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.

MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.

Materials

Why these are connected

Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

Samples

Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.

Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.

MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.

Materials

Why these are connected

Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

Samples

Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.

Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.

MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.

Materials

Why these are connected

Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

Samples

Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.

Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.

MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.

Materials

Why these are connected

Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

Samples

Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.

Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.

MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.

Materials

Why these are connected

Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

Samples

Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.

Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.

MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.

Materials

Why these are connected

Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

Samples

Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.

Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.

MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.

Materials

Why these are connected

Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

Samples

Monolayer MoSe₂ flake measured by low-temperature PL and related optical spectroscopy.

Monolayer MoS1.4Se0.6 flake measured by low-temperature PL and related optical spectroscopy.

MoS1.4Se0.6/MoSe₂ heterobilayer encapsulated in hBN, used for P-SHG, PL, PLE, and TRPL measurements.

Materials

Why these are connected

Processing

Characterization

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Processing

Characterization

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Processing

Characterization

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Processing

Characterization

Properties