Abstract

This work presents a platform that enables surface acoustic wave (SAW) modulation of both intralayer and interlayer excitons in MoS₂/WSe₂ heterostructures. Harnessing the coupled piezoelectric and strain fields of SAWs, this integrated approach allows for dynamic, precise, and fully contactless control of excitonic properties. The study identifies two distinct modulable interlayer excitons in optical communication bands, IXK-Γ in the O-band (around 1300 nm) and IXK-K in the S-band (around 1500 nm), with a robust twist-angle-independent energy splitting of 120 meV in agreement with DFT calculations. The SAW-induced type-II band alignment promotes exciton dissociation and tunable photoluminescence, and simultaneous in-plane/out-of-plane SAW fields produce quadratic Stark effects for intralayer excitons and linear Stark effects for interlayer excitons.

Abstract

This work presents a platform that enables surface acoustic wave (SAW) modulation of both intralayer and interlayer excitons in MoS₂/WSe₂ heterostructures. Harnessing the coupled piezoelectric and strain fields of SAWs, this integrated approach allows for dynamic, precise, and fully contactless control of excitonic properties. The study identifies two distinct modulable interlayer excitons in optical communication bands, IXK-Γ in the O-band (around 1300 nm) and IXK-K in the S-band (around 1500 nm), with a robust twist-angle-independent energy splitting of 120 meV in agreement with DFT calculations. The SAW-induced type-II band alignment promotes exciton dissociation and tunable photoluminescence, and simultaneous in-plane/out-of-plane SAW fields produce quadratic Stark effects for intralayer excitons and linear Stark effects for interlayer excitons.

Abstract

This work presents a platform that enables surface acoustic wave (SAW) modulation of both intralayer and interlayer excitons in MoS₂/WSe₂ heterostructures. Harnessing the coupled piezoelectric and strain fields of SAWs, this integrated approach allows for dynamic, precise, and fully contactless control of excitonic properties. The study identifies two distinct modulable interlayer excitons in optical communication bands, IXK-Γ in the O-band (around 1300 nm) and IXK-K in the S-band (around 1500 nm), with a robust twist-angle-independent energy splitting of 120 meV in agreement with DFT calculations. The SAW-induced type-II band alignment promotes exciton dissociation and tunable photoluminescence, and simultaneous in-plane/out-of-plane SAW fields produce quadratic Stark effects for intralayer excitons and linear Stark effects for interlayer excitons.

Abstract

This work presents a platform that enables surface acoustic wave (SAW) modulation of both intralayer and interlayer excitons in MoS₂/WSe₂ heterostructures. Harnessing the coupled piezoelectric and strain fields of SAWs, this integrated approach allows for dynamic, precise, and fully contactless control of excitonic properties. The study identifies two distinct modulable interlayer excitons in optical communication bands, IXK-Γ in the O-band (around 1300 nm) and IXK-K in the S-band (around 1500 nm), with a robust twist-angle-independent energy splitting of 120 meV in agreement with DFT calculations. The SAW-induced type-II band alignment promotes exciton dissociation and tunable photoluminescence, and simultaneous in-plane/out-of-plane SAW fields produce quadratic Stark effects for intralayer excitons and linear Stark effects for interlayer excitons.