Research paper
Experimental CharacterizationTrion transfer in mixed-dimensional heterostructures
N. Fang, U. Erkılıç, Y. R. Chang, S. Fujii et al.
Copyright © 2026 Matter42. All rights reserved.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations2 properties4 figures
1 preparation4 characterizations9 properties6 figures
1 preparation4 characterizations3 properties7 figures
3 characterizations3 figures
1 preparation4 characterizations9 properties10 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | E₂₂ | 1.447eV | — | |||
| PL Peak | E₁₁ | 0.971eV | — | |||
| PL Peak | E₂₂ | 1.408eV | — | |||
| PL Peak | E₁₁ | 0.923eV | — | |||
| PL Peak | XWSe₂/TWSe₂ excitation | 1.643eV | — | |||
| PL Peak | TCNT | 0.817eV | — | |||
| PL Peak | TCNT | 0.817eV | — | |||
| PL Peak | E₁₁ | 0.971eV | — | |||
| PL Peak | E₁₁ | 1.018eV | — | |||
| PL Peak | TCNT | 0.883eV | — | |||
| Pl Peak Shift | E₁₁ redshift | 0.045eV | — | |||
| Fet On Off Ratio | quenching factor Q | 0.062 | — | |||
| Fet On Off Ratio | E₁₁ quenching fraction | 0.94 | — | |||
| Fet Mobility | charge-neutral point shift | 2.9V | — | |||
| Pl Peak Intensity | TCNT intensity slope under XWSe₂/TWSe₂ excitation | 358counts·s⁻¹·µW^-1 | — | |||
| Pl Peak Intensity | TCNT intensity slope under E₂₂ excitation | 32counts·s⁻¹·µW^-1 | — | |||
| Pl Peak Shift | ΔE between TCNT and E₁₁ | 0.106eV | — | |||
| Pl Peak Shift | expected CNT K-momentum exciton separation | 0.14eV | — | |||
| Pl Peak Shift | A parameter | 60meV·nm | — | |||
| Pl Peak Shift | B parameter | 67meV·nm2 | — | |||
| PL Peak | XWSe₂/TWSe₂ excitation energy | 1.634eV | — | |||
| PL Peak | exciton diffusion length | 0.12um | — | |||
| PL Peak | Nb doping concentration | 8800000000000000000cm⁻³ | — | |||
| Pl Peak Fwhm | PL peak | 10meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Enhanced Polarizability and Tunable Diamagnetic Shifts from Charged Localized Emitters in WSe2 on a Relaxor Ferroelectric
Interplay of energy and charge transfer in WSe2/CrSBr heterostructures
Nanoscale confinement and control of excitonic complexes in a monolayer WSe2
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
Highly tunable valley polarization of potential-trapped moiré excitons in WSe2/WS2 heterojunctions
Tunable phononic coupling in excitonic quantum emitters
Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer
Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers
Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between Cr2Ge2Te6 electrodes
Probing Plexciton Emission from 2D Materials on Gold Nanotrenches
Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes
Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations2 properties4 figures
1 preparation4 characterizations9 properties6 figures
1 preparation4 characterizations3 properties7 figures
3 characterizations3 figures
1 preparation4 characterizations9 properties10 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | E₂₂ | 1.447eV | — | |||
| PL Peak | E₁₁ | 0.971eV | — | |||
| PL Peak | E₂₂ | 1.408eV | — | |||
| PL Peak | E₁₁ | 0.923eV | — | |||
| PL Peak | XWSe₂/TWSe₂ excitation | 1.643eV | — | |||
| PL Peak | TCNT | 0.817eV | — | |||
| PL Peak | TCNT | 0.817eV | — | |||
| PL Peak | E₁₁ | 0.971eV | — | |||
| PL Peak | E₁₁ | 1.018eV | — | |||
| PL Peak | TCNT | 0.883eV | — | |||
| Pl Peak Shift | E₁₁ redshift | 0.045eV | — | |||
| Fet On Off Ratio | quenching factor Q | 0.062 | — | |||
| Fet On Off Ratio | E₁₁ quenching fraction | 0.94 | — | |||
| Fet Mobility | charge-neutral point shift | 2.9V | — | |||
| Pl Peak Intensity | TCNT intensity slope under XWSe₂/TWSe₂ excitation | 358counts·s⁻¹·µW^-1 | — | |||
| Pl Peak Intensity | TCNT intensity slope under E₂₂ excitation | 32counts·s⁻¹·µW^-1 | — | |||
| Pl Peak Shift | ΔE between TCNT and E₁₁ | 0.106eV | — | |||
| Pl Peak Shift | expected CNT K-momentum exciton separation | 0.14eV | — | |||
| Pl Peak Shift | A parameter | 60meV·nm | — | |||
| Pl Peak Shift | B parameter | 67meV·nm2 | — | |||
| PL Peak | XWSe₂/TWSe₂ excitation energy | 1.634eV | — | |||
| PL Peak | exciton diffusion length | 0.12um | — | |||
| PL Peak | Nb doping concentration | 8800000000000000000cm⁻³ | — | |||
| Pl Peak Fwhm | PL peak | 10meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Enhanced Polarizability and Tunable Diamagnetic Shifts from Charged Localized Emitters in WSe2 on a Relaxor Ferroelectric
Interplay of energy and charge transfer in WSe2/CrSBr heterostructures
Nanoscale confinement and control of excitonic complexes in a monolayer WSe2
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
Highly tunable valley polarization of potential-trapped moiré excitons in WSe2/WS2 heterojunctions
Tunable phononic coupling in excitonic quantum emitters
Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer
Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers
Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between Cr2Ge2Te6 electrodes
Probing Plexciton Emission from 2D Materials on Gold Nanotrenches
Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes
Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations2 properties4 figures
1 preparation4 characterizations9 properties6 figures
1 preparation4 characterizations3 properties7 figures
3 characterizations3 figures
1 preparation4 characterizations9 properties10 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | E₂₂ | 1.447eV | — | |||
| PL Peak | E₁₁ | 0.971eV | — | |||
| PL Peak | E₂₂ | 1.408eV | — | |||
| PL Peak | E₁₁ | 0.923eV | — | |||
| PL Peak | XWSe₂/TWSe₂ excitation | 1.643eV | — | |||
| PL Peak | TCNT | 0.817eV | — | |||
| PL Peak | TCNT | 0.817eV | — | |||
| PL Peak | E₁₁ | 0.971eV | — | |||
| PL Peak | E₁₁ | 1.018eV | — | |||
| PL Peak | TCNT | 0.883eV | — | |||
| Pl Peak Shift | E₁₁ redshift | 0.045eV | — | |||
| Fet On Off Ratio | quenching factor Q | 0.062 | — | |||
| Fet On Off Ratio | E₁₁ quenching fraction | 0.94 | — | |||
| Fet Mobility | charge-neutral point shift | 2.9V | — | |||
| Pl Peak Intensity | TCNT intensity slope under XWSe₂/TWSe₂ excitation | 358counts·s⁻¹·µW^-1 | — | |||
| Pl Peak Intensity | TCNT intensity slope under E₂₂ excitation | 32counts·s⁻¹·µW^-1 | — | |||
| Pl Peak Shift | ΔE between TCNT and E₁₁ | 0.106eV | — | |||
| Pl Peak Shift | expected CNT K-momentum exciton separation | 0.14eV | — | |||
| Pl Peak Shift | A parameter | 60meV·nm | — | |||
| Pl Peak Shift | B parameter | 67meV·nm2 | — | |||
| PL Peak | XWSe₂/TWSe₂ excitation energy | 1.634eV | — | |||
| PL Peak | exciton diffusion length | 0.12um | — | |||
| PL Peak | Nb doping concentration | 8800000000000000000cm⁻³ | — | |||
| Pl Peak Fwhm | PL peak | 10meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Enhanced Polarizability and Tunable Diamagnetic Shifts from Charged Localized Emitters in WSe2 on a Relaxor Ferroelectric
Interplay of energy and charge transfer in WSe2/CrSBr heterostructures
Nanoscale confinement and control of excitonic complexes in a monolayer WSe2
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
Highly tunable valley polarization of potential-trapped moiré excitons in WSe2/WS2 heterojunctions
Tunable phononic coupling in excitonic quantum emitters
Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer
Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers
Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between Cr2Ge2Te6 electrodes
Probing Plexciton Emission from 2D Materials on Gold Nanotrenches
Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes
Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations2 properties4 figures
1 preparation4 characterizations9 properties6 figures
1 preparation4 characterizations3 properties7 figures
3 characterizations3 figures
1 preparation4 characterizations9 properties10 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | E₂₂ | 1.447eV | — | |||
| PL Peak | E₁₁ | 0.971eV | — | |||
| PL Peak | E₂₂ | 1.408eV | — | |||
| PL Peak | E₁₁ | 0.923eV | — | |||
| PL Peak | XWSe₂/TWSe₂ excitation | 1.643eV | — | |||
| PL Peak | TCNT | 0.817eV | — | |||
| PL Peak | TCNT | 0.817eV | — | |||
| PL Peak | E₁₁ | 0.971eV | — | |||
| PL Peak | E₁₁ | 1.018eV | — | |||
| PL Peak | TCNT | 0.883eV | — | |||
| Pl Peak Shift | E₁₁ redshift | 0.045eV | — | |||
| Fet On Off Ratio | quenching factor Q | 0.062 | — | |||
| Fet On Off Ratio | E₁₁ quenching fraction | 0.94 | — | |||
| Fet Mobility | charge-neutral point shift | 2.9V | — | |||
| Pl Peak Intensity | TCNT intensity slope under XWSe₂/TWSe₂ excitation | 358counts·s⁻¹·µW^-1 | — | |||
| Pl Peak Intensity | TCNT intensity slope under E₂₂ excitation | 32counts·s⁻¹·µW^-1 | — | |||
| Pl Peak Shift | ΔE between TCNT and E₁₁ | 0.106eV | — | |||
| Pl Peak Shift | expected CNT K-momentum exciton separation | 0.14eV | — | |||
| Pl Peak Shift | A parameter | 60meV·nm | — | |||
| Pl Peak Shift | B parameter | 67meV·nm2 | — | |||
| PL Peak | XWSe₂/TWSe₂ excitation energy | 1.634eV | — | |||
| PL Peak | exciton diffusion length | 0.12um | — | |||
| PL Peak | Nb doping concentration | 8800000000000000000cm⁻³ | — | |||
| Pl Peak Fwhm | PL peak | 10meV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Enhanced Polarizability and Tunable Diamagnetic Shifts from Charged Localized Emitters in WSe2 on a Relaxor Ferroelectric
Interplay of energy and charge transfer in WSe2/CrSBr heterostructures
Nanoscale confinement and control of excitonic complexes in a monolayer WSe2
Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
Highly tunable valley polarization of potential-trapped moiré excitons in WSe2/WS2 heterojunctions
Tunable phononic coupling in excitonic quantum emitters
Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer
Moiré-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers
Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between Cr2Ge2Te6 electrodes
Probing Plexciton Emission from 2D Materials on Gold Nanotrenches
Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes
Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation
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