Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
h-BN encapsulated WSe₂/MoS₂ heterobilayer fabricated by standard dry transfer on SiO₂/Si substrate with ultralow-doping Si; monolayer WSe₂ and MoS₂ and thin h-BN were mechanically exfoliated and assembled with aligned sharp edges (commensurate stacking within about 1 degree twist uncertainty).
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
h-BN encapsulated WSe₂/MoS₂ heterobilayer fabricated by standard dry transfer on SiO₂/Si substrate with ultralow-doping Si; monolayer WSe₂ and MoS₂ and thin h-BN were mechanically exfoliated and assembled with aligned sharp edges (commensurate stacking within about 1 degree twist uncertainty).
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
h-BN encapsulated WSe₂/MoS₂ heterobilayer fabricated by standard dry transfer on SiO₂/Si substrate with ultralow-doping Si; monolayer WSe₂ and MoS₂ and thin h-BN were mechanically exfoliated and assembled with aligned sharp edges (commensurate stacking within about 1 degree twist uncertainty).
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
h-BN encapsulated WSe₂/MoS₂ heterobilayer fabricated by standard dry transfer on SiO₂/Si substrate with ultralow-doping Si; monolayer WSe₂ and MoS₂ and thin h-BN were mechanically exfoliated and assembled with aligned sharp edges (commensurate stacking within about 1 degree twist uncertainty).