Research paper
Experimental CharacterizationGeometric engineering of viscous magnetotransport in a two-dimensional electron system
A. D. Levin, G. M. Gusev, A. S. Yaroshevich, Z. D. Kvon et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | quantum well width | 14nm | — | |||
| Carrier Density | electron density | 710000000000cm⁻² | — | |||
| Fet Mobility | mobility | 2000000cm²/Vs | — | |||
| Channel Width | device width | 20um | — | |||
| Channel Length | segment length | 100um | — | |||
| Channel Length | segment length | 20um | — | |||
| Mean Free Path | electron mean free path | 25um | — | |||
| Larmor Radius | Larmor radius | 3.5um | — | |||
| Larmor Radius | Larmor radius | 1.6um | — | |||
| Channel Width | narrow width | 2um | — | |||
| Channel Width | narrow width | 8um | — | |||
| Channel Width | sample width | 20um | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | quantum well width | 14nm | — | |||
| Carrier Density | electron density | 710000000000cm⁻² | — | |||
| Fet Mobility | mobility | 2000000cm²/Vs | — | |||
| Channel Width | device width | 20um | — | |||
| Channel Length | segment length | 100um | — | |||
| Channel Length | segment length | 20um | — | |||
| Mean Free Path | electron mean free path | 25um | — | |||
| Larmor Radius | Larmor radius | 3.5um | — | |||
| Larmor Radius | Larmor radius | 1.6um | — | |||
| Channel Width | narrow width | 2um | — | |||
| Channel Width | narrow width | 8um | — | |||
| Channel Width | sample width | 20um | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | quantum well width | 14nm | — | |||
| Carrier Density | electron density | 710000000000cm⁻² | — | |||
| Fet Mobility | mobility | 2000000cm²/Vs | — | |||
| Channel Width | device width | 20um | — | |||
| Channel Length | segment length | 100um | — | |||
| Channel Length | segment length | 20um | — | |||
| Mean Free Path | electron mean free path | 25um | — | |||
| Larmor Radius | Larmor radius | 3.5um | — | |||
| Larmor Radius | Larmor radius | 1.6um | — | |||
| Channel Width | narrow width | 2um | — | |||
| Channel Width | narrow width | 8um | — | |||
| Channel Width | sample width | 20um | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | quantum well width | 14nm | — | |||
| Carrier Density | electron density | 710000000000cm⁻² | — | |||
| Fet Mobility | mobility | 2000000cm²/Vs | — | |||
| Channel Width | device width | 20um | — | |||
| Channel Length | segment length | 100um | — | |||
| Channel Length | segment length | 20um | — | |||
| Mean Free Path | electron mean free path | 25um | — | |||
| Larmor Radius | Larmor radius | 3.5um | — | |||
| Larmor Radius | Larmor radius | 1.6um | — | |||
| Channel Width | narrow width | 2um | — | |||
| Channel Width | narrow width | 8um | — | |||
| Channel Width | sample width | 20um | — |