Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions

Paper details

Research paper

Experimental Characterization

P. T. Madathil, K. A. Villegas Rosales, C. T. Tai, Y. J. Chung et al.

arXiv·2023·10.1103/PhysRevLett.130.226503·arXiv:2306.03704

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 characterization5 properties2 figures

ExperimentalGaAsStudied MaterialAl0.24Ga0.76AsSubstrate / Dielectric

2 properties

ExperimentalGaAsStudied MaterialAl0.24Ga0.76AsSubstrate / Dielectric

2 properties

ExperimentalGaAsStudied MaterialAl0.24Ga0.76AsSubstrate / Dielectric

GaAs

Studied Material

Also known as

gallium arsenide

studied material

Al0.24Ga0.76As

Substrate / Dielectric

Also known as

Related documents with shared materials, methods, properties, or citations.

Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 40-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 40-nm-wide GaA	—
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 50-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 50-nm-wide GaA	—
Transport Critical Exponent	κ	0.41	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Transport Critical Exponent	κ	0.42	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Transport Critical Exponent	κ	0.2	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 40-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 40-nm-wide GaA	—
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 50-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 50-nm-wide GaA	—
Transport Critical Exponent	κ	0.41	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Transport Critical Exponent	κ	0.42	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Transport Critical Exponent	κ	0.2	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 40-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 40-nm-wide GaA	—
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 50-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 50-nm-wide GaA	—
Transport Critical Exponent	κ	0.41	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Transport Critical Exponent	κ	0.42	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Transport Critical Exponent	κ	0.2	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 40-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 40-nm-wide GaA	—
Fet Carrier Concentration	2DES density	100000000000cm⁻²	GaAs	Two-dimensional electron system confined to a 50-nm-wide GaA	—
Fet Mobility	mobility	20000000cm²/Vs	GaAs	Two-dimensional electron system confined to a 50-nm-wide GaA	—
Transport Critical Exponent	κ	0.41	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Transport Critical Exponent	κ	0.42	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—
Transport Critical Exponent	κ	0.2	GaAs	Two-dimensional electron system confined to a 30-nm-wide GaA	—