Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Two-dimensional electron system confined to a 30-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.
Two-dimensional electron system confined to a 40-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.
Two-dimensional electron system confined to a 50-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Two-dimensional electron system confined to a 30-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.
Two-dimensional electron system confined to a 40-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.
Two-dimensional electron system confined to a 50-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Two-dimensional electron system confined to a 30-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.
Two-dimensional electron system confined to a 40-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.
Two-dimensional electron system confined to a 50-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Two-dimensional electron system confined to a 30-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.
Two-dimensional electron system confined to a 40-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.
Two-dimensional electron system confined to a 50-nm-wide GaAs quantum well with 220-nm Al0.24Ga0.76As barriers and Si doping layers; van der Pauw transport device with alloyed InSn contacts.