Research paper
Experimental CharacterizationTheoreticalBulk and shear viscosities in multicomponent 2D electron system
A. D. Levin, G. M. Gusev, V. A. Chitta, A. S. Jaroshevich et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | total electron sheet density | 900000000000cm⁻² | — | |||
| Fet Mobility | average mobility | 450000cm²/Vs | — | |||
| Fet Carrier Concentration | total electron sheet density | 850000000000cm⁻² | — | |||
| Fet Mobility | average mobility | 400000cm²/Vs | — | |||
| Substrate Thickness | central well width | 220angstrom | — | |||
| Substrate Thickness | side well width | 100angstrom | — | |||
| Substrate Thickness | barrier thickness | 20angstrom | — | |||
| Substrate Thickness | barrier thickness | 20angstrom | — | |||
| Fet Carrier Concentration | subband density | 362000000000cm⁻² | — | |||
| Fet Carrier Concentration | subband density | 323000000000cm⁻² | — | |||
| Fet Carrier Concentration | subband density | 214000000000cm⁻² | — | |||
| Fet Carrier Concentration | average mean free path | (6-3.8)um | — |
Magnetoplasma excitations in interacting GaAs disks
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | total electron sheet density | 900000000000cm⁻² | — | |||
| Fet Mobility | average mobility | 450000cm²/Vs | — | |||
| Fet Carrier Concentration | total electron sheet density | 850000000000cm⁻² | — | |||
| Fet Mobility | average mobility | 400000cm²/Vs | — | |||
| Substrate Thickness | central well width | 220angstrom | — | |||
| Substrate Thickness | side well width | 100angstrom | — | |||
| Substrate Thickness | barrier thickness | 20angstrom | — | |||
| Substrate Thickness | barrier thickness | 20angstrom | — | |||
| Fet Carrier Concentration | subband density | 362000000000cm⁻² | — | |||
| Fet Carrier Concentration | subband density | 323000000000cm⁻² | — | |||
| Fet Carrier Concentration | subband density | 214000000000cm⁻² | — | |||
| Fet Carrier Concentration | average mean free path | (6-3.8)um | — |
Magnetoplasma excitations in interacting GaAs disks
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | total electron sheet density | 900000000000cm⁻² | — | |||
| Fet Mobility | average mobility | 450000cm²/Vs | — | |||
| Fet Carrier Concentration | total electron sheet density | 850000000000cm⁻² | — | |||
| Fet Mobility | average mobility | 400000cm²/Vs | — | |||
| Substrate Thickness | central well width | 220angstrom | — | |||
| Substrate Thickness | side well width | 100angstrom | — | |||
| Substrate Thickness | barrier thickness | 20angstrom | — | |||
| Substrate Thickness | barrier thickness | 20angstrom | — | |||
| Fet Carrier Concentration | subband density | 362000000000cm⁻² | — | |||
| Fet Carrier Concentration | subband density | 323000000000cm⁻² | — | |||
| Fet Carrier Concentration | subband density | 214000000000cm⁻² | — | |||
| Fet Carrier Concentration | average mean free path | (6-3.8)um | — |
Magnetoplasma excitations in interacting GaAs disks
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | total electron sheet density | 900000000000cm⁻² | — | |||
| Fet Mobility | average mobility | 450000cm²/Vs | — | |||
| Fet Carrier Concentration | total electron sheet density | 850000000000cm⁻² | — | |||
| Fet Mobility | average mobility | 400000cm²/Vs | — | |||
| Substrate Thickness | central well width | 220angstrom | — | |||
| Substrate Thickness | side well width | 100angstrom | — | |||
| Substrate Thickness | barrier thickness | 20angstrom | — | |||
| Substrate Thickness | barrier thickness | 20angstrom | — | |||
| Fet Carrier Concentration | subband density | 362000000000cm⁻² | — | |||
| Fet Carrier Concentration | subband density | 323000000000cm⁻² | — | |||
| Fet Carrier Concentration | subband density | 214000000000cm⁻² | — | |||
| Fet Carrier Concentration | average mean free path | (6-3.8)um | — |
Magnetoplasma excitations in interacting GaAs disks