Magnetoplasma excitations in interacting GaAs disks

S. A. Andreeva; A. A. Gavrilov; K. R. Dzhikirba; A. S. Astrakhantseva; A. V. Shchepetilnikov; O. V. Orlov; V. V. Solovyev; I. V. Kukushkin

doi:10.48550/arXiv.2604.25736

Paper details

Research paper

Experimental CharacterizationTheoretical

Magnetoplasma excitations in interacting GaAs disks

S. A. Andreeva, A. A. Gavrilov, K. R. Dzhikirba, A. S. Astrakhantseva et al.

arXiv·2026·arXiv:2604.25736

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

2DES disk array with lattice period 300 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.

1 characterization8 properties2 figures

ExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied Material

2DES disk array with lattice period 200 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.

1 characterization8 properties2 figures

ExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied Material

2DES disk array with lattice period 110 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.

1 characterization8 properties2 figures

ExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied Material

Materials

GaAs

Studied Material

Also known as

GaAs quantum well

studied material

Al0.3Ga0.7As

Studied Material

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Magnetoplasma excitations in interacting GaAs disks | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	2DES electron concentration	1100000000000cm⁻²	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Fet Mobility	mobility	105000cm²/Vs	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Substrate Thickness	quantum well width	20nm	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Thickness	quantum well depth from surface	200nm	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Lattice Period	disk lattice period	300um	GaAs	2DES disk array with lattice period 300 um and disk radius 5	—	—
Lattice Period	disk lattice period	200um	GaAs	2DES disk array with lattice period 200 um and disk radius 5	—	—
Lattice Period	disk lattice period	110um	GaAs	2DES disk array with lattice period 110 um and disk radius 5	—	—
Thickness	disk radius	50um	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5	—	—
PL Peak	F₀ (non-interacting disks)	110GHz	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5		—
PL Peak	F₀ (coupled disks)	95GHz	GaAs	2DES disk array with lattice period 110 um and disk radius 5		—
PL Peak	calculated plasma frequency from Eq. 1	111GHz	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	2DES electron concentration	1100000000000cm⁻²	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Fet Mobility	mobility	105000cm²/Vs	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Substrate Thickness	quantum well width	20nm	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Thickness	quantum well depth from surface	200nm	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Lattice Period	disk lattice period	300um	GaAs	2DES disk array with lattice period 300 um and disk radius 5	—	—
Lattice Period	disk lattice period	200um	GaAs	2DES disk array with lattice period 200 um and disk radius 5	—	—
Lattice Period	disk lattice period	110um	GaAs	2DES disk array with lattice period 110 um and disk radius 5	—	—
Thickness	disk radius	50um	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5	—	—
PL Peak	F₀ (non-interacting disks)	110GHz	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5		—
PL Peak	F₀ (coupled disks)	95GHz	GaAs	2DES disk array with lattice period 110 um and disk radius 5		—
PL Peak	calculated plasma frequency from Eq. 1	111GHz	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	2DES electron concentration	1100000000000cm⁻²	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Fet Mobility	mobility	105000cm²/Vs	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Substrate Thickness	quantum well width	20nm	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Thickness	quantum well depth from surface	200nm	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Lattice Period	disk lattice period	300um	GaAs	2DES disk array with lattice period 300 um and disk radius 5	—	—
Lattice Period	disk lattice period	200um	GaAs	2DES disk array with lattice period 200 um and disk radius 5	—	—
Lattice Period	disk lattice period	110um	GaAs	2DES disk array with lattice period 110 um and disk radius 5	—	—
Thickness	disk radius	50um	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5	—	—
PL Peak	F₀ (non-interacting disks)	110GHz	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5		—
PL Peak	F₀ (coupled disks)	95GHz	GaAs	2DES disk array with lattice period 110 um and disk radius 5		—
PL Peak	calculated plasma frequency from Eq. 1	111GHz	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	2DES electron concentration	1100000000000cm⁻²	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Fet Mobility	mobility	105000cm²/Vs	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Substrate Thickness	quantum well width	20nm	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Thickness	quantum well depth from surface	200nm	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—
Lattice Period	disk lattice period	300um	GaAs	2DES disk array with lattice period 300 um and disk radius 5	—	—
Lattice Period	disk lattice period	200um	GaAs	2DES disk array with lattice period 200 um and disk radius 5	—	—
Lattice Period	disk lattice period	110um	GaAs	2DES disk array with lattice period 110 um and disk radius 5	—	—
Thickness	disk radius	50um	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5	—	—
PL Peak	F₀ (non-interacting disks)	110GHz	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5		—
PL Peak	F₀ (coupled disks)	95GHz	GaAs	2DES disk array with lattice period 110 um and disk radius 5		—
PL Peak	calculated plasma frequency from Eq. 1	111GHz	GaAs	2DES disk array with lattice period 300 um and disk radius 5 2DES disk array with lattice period 200 um and disk radius 5 2DES disk array with lattice period 110 um and disk radius 5		—