Research paperExperimental CharacterizationTheoreticalMagnetoplasma excitations in interacting GaAs disksS. A. Andreeva, A. A. Gavrilov, K. R. Dzhikirba, A. S. Astrakhantseva et al.arXiv·2026·arXiv:2604.25736AbstractWe investigate the effect of inter-disk coupling on the magnetoplasmon dispersion in a square lattice of two-dimensional electron system (2DES) disks etched from a GaAs quantum well. Using magneto-optical terahertz (THz) spectroscopy, we track the evolution of the collective modes as disk lattice period is systematically reduced, thereby increasing the coupling strength. At large distances, the system exhibits magnetoplasma modes corresponding to individual excitations in disks. As the inter-disk distance decreases, we observe a modification to magnetoplasma dispersion.Read more
2DES disk array with lattice period 300 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand
2DES disk array with lattice period 200 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand
2DES disk array with lattice period 110 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalMagnetoplasma excitations in interacting GaAs disksS. A. Andreeva, A. A. Gavrilov, K. R. Dzhikirba, A. S. Astrakhantseva et al.arXiv·2026·arXiv:2604.25736AbstractWe investigate the effect of inter-disk coupling on the magnetoplasmon dispersion in a square lattice of two-dimensional electron system (2DES) disks etched from a GaAs quantum well. Using magneto-optical terahertz (THz) spectroscopy, we track the evolution of the collective modes as disk lattice period is systematically reduced, thereby increasing the coupling strength. At large distances, the system exhibits magnetoplasma modes corresponding to individual excitations in disks. As the inter-disk distance decreases, we observe a modification to magnetoplasma dispersion.Read more
2DES disk array with lattice period 300 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand
2DES disk array with lattice period 200 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand
2DES disk array with lattice period 110 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalMagnetoplasma excitations in interacting GaAs disksS. A. Andreeva, A. A. Gavrilov, K. R. Dzhikirba, A. S. Astrakhantseva et al.arXiv·2026·arXiv:2604.25736AbstractWe investigate the effect of inter-disk coupling on the magnetoplasmon dispersion in a square lattice of two-dimensional electron system (2DES) disks etched from a GaAs quantum well. Using magneto-optical terahertz (THz) spectroscopy, we track the evolution of the collective modes as disk lattice period is systematically reduced, thereby increasing the coupling strength. At large distances, the system exhibits magnetoplasma modes corresponding to individual excitations in disks. As the inter-disk distance decreases, we observe a modification to magnetoplasma dispersion.Read more
2DES disk array with lattice period 300 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand
2DES disk array with lattice period 200 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand
2DES disk array with lattice period 110 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalMagnetoplasma excitations in interacting GaAs disksS. A. Andreeva, A. A. Gavrilov, K. R. Dzhikirba, A. S. Astrakhantseva et al.arXiv·2026·arXiv:2604.25736AbstractWe investigate the effect of inter-disk coupling on the magnetoplasmon dispersion in a square lattice of two-dimensional electron system (2DES) disks etched from a GaAs quantum well. Using magneto-optical terahertz (THz) spectroscopy, we track the evolution of the collective modes as disk lattice period is systematically reduced, thereby increasing the coupling strength. At large distances, the system exhibits magnetoplasma modes corresponding to individual excitations in disks. As the inter-disk distance decreases, we observe a modification to magnetoplasma dispersion.Read more
2DES disk array with lattice period 300 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand
2DES disk array with lattice period 200 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand
2DES disk array with lattice period 110 um and disk radius 50 um fabricated on an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well heterostructure.1 characterization8 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialExpand