Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas

Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature

High-Efficiency Tunable Microwave Photon Detector Based on a Semiconductor Double Quantum Dot Coupled to a Superconducting High-Impedance Cavity

Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl

Artificial electrostatic crystals: a new platform for creating correlated quantum states

Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current

Enhancement of Indistinguishable Photon Emission from a GaAs Quantum Dot via Charge Noise Suppression

Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions

Geometric engineering of viscous magnetotransport in a two-dimensional electron system

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas

Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature

High-Efficiency Tunable Microwave Photon Detector Based on a Semiconductor Double Quantum Dot Coupled to a Superconducting High-Impedance Cavity

Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl

Artificial electrostatic crystals: a new platform for creating correlated quantum states

Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current

Enhancement of Indistinguishable Photon Emission from a GaAs Quantum Dot via Charge Noise Suppression

Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions

Geometric engineering of viscous magnetotransport in a two-dimensional electron system

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas

Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature

High-Efficiency Tunable Microwave Photon Detector Based on a Semiconductor Double Quantum Dot Coupled to a Superconducting High-Impedance Cavity

Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl

Artificial electrostatic crystals: a new platform for creating correlated quantum states

Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current

Enhancement of Indistinguishable Photon Emission from a GaAs Quantum Dot via Charge Noise Suppression

Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions

Geometric engineering of viscous magnetotransport in a two-dimensional electron system

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas

Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature

High-Efficiency Tunable Microwave Photon Detector Based on a Semiconductor Double Quantum Dot Coupled to a Superconducting High-Impedance Cavity

Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl

Artificial electrostatic crystals: a new platform for creating correlated quantum states

Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current

Enhancement of Indistinguishable Photon Emission from a GaAs Quantum Dot via Charge Noise Suppression

Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions

Geometric engineering of viscous magnetotransport in a two-dimensional electron system

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)