Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

D. Q. Wang; D. Reuter; A. D. Wieck; A. R. Hamilton; O. Klochan

doi:10.1063/5.0009462

Paper

Atlas literature

Research paper

Experimental Characterization

Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton et al.

arXiv preprint·2024·10.1063/5.0009462·arXiv:2403.07273

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Shallow undoped GaAs/AlGaAs heterostructure with an in-situ perforated gate formed from an etched n+GaAs cap and an insulated metal top gate.

1 preparation2 characterizations10 properties3 figures

ExperimentalGaAs/AlGaAs heterostructure 2DEGStudied MaterialGaAsStudied MaterialAlxGa₁-xAsSubstrate / DielectricAl₂O₃Substrate / DielectricMetal top gateCapping Or Contact

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Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential | Matter42 Literature