Research paper
Experimental CharacterizationSensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors
M. M. Feldman, G. Fuchs, T. Liu, L. A. D’Imperio et al.
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations6 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Capacitance | parasitic capacitance | 5.25pF | — | |||
| Signal To Noise Ratio | single-electron SNR at 1 Hz bandwidth without device connected | 3 | — | |||
| Signal To Noise Ratio | single-electron SNR at 1 Hz bandwidth with device connected | 0.5 | — | |||
| Electron Sensitivity | few-electron sensing sensitivity | 2e/√Hz | — | |||
| Voltage Per Electron | expected single-electron induced voltage | 160nV/e | — | |||
| Frequency | measurement frequency | 102kHz | — |
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Compact self-matched gyrators using edge magnetoplasmons
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Composite Fermion Mass
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations6 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Capacitance | parasitic capacitance | 5.25pF | — | |||
| Signal To Noise Ratio | single-electron SNR at 1 Hz bandwidth without device connected | 3 | — | |||
| Signal To Noise Ratio | single-electron SNR at 1 Hz bandwidth with device connected | 0.5 | — | |||
| Electron Sensitivity | few-electron sensing sensitivity | 2e/√Hz | — | |||
| Voltage Per Electron | expected single-electron induced voltage | 160nV/e | — | |||
| Frequency | measurement frequency | 102kHz | — |
Related documents with shared materials, methods, properties, or citations.
Compact self-matched gyrators using edge magnetoplasmons
Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
Geometric engineering of viscous magnetotransport in a two-dimensional electron system
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Artificial electrostatic crystals: a new platform for creating correlated quantum states
Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions
Bulk and shear viscosities in multicomponent 2D electron system
Composite Fermion Mass
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations6 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Capacitance | parasitic capacitance | 5.25pF | — | |||
| Signal To Noise Ratio | single-electron SNR at 1 Hz bandwidth without device connected | 3 | — | |||
| Signal To Noise Ratio | single-electron SNR at 1 Hz bandwidth with device connected | 0.5 | — | |||
| Electron Sensitivity | few-electron sensing sensitivity | 2e/√Hz | — | |||
| Voltage Per Electron | expected single-electron induced voltage | 160nV/e | — | |||
| Frequency | measurement frequency | 102kHz | — |
Related documents with shared materials, methods, properties, or citations.
Compact self-matched gyrators using edge magnetoplasmons
Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
Geometric engineering of viscous magnetotransport in a two-dimensional electron system
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Artificial electrostatic crystals: a new platform for creating correlated quantum states
Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions
Bulk and shear viscosities in multicomponent 2D electron system
Composite Fermion Mass
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations6 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Capacitance | parasitic capacitance | 5.25pF | — | |||
| Signal To Noise Ratio | single-electron SNR at 1 Hz bandwidth without device connected | 3 | — | |||
| Signal To Noise Ratio | single-electron SNR at 1 Hz bandwidth with device connected | 0.5 | — | |||
| Electron Sensitivity | few-electron sensing sensitivity | 2e/√Hz | — | |||
| Voltage Per Electron | expected single-electron induced voltage | 160nV/e | — | |||
| Frequency | measurement frequency | 102kHz | — |
Related documents with shared materials, methods, properties, or citations.
Compact self-matched gyrators using edge magnetoplasmons
Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
Geometric engineering of viscous magnetotransport in a two-dimensional electron system
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Artificial electrostatic crystals: a new platform for creating correlated quantum states
Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions
Bulk and shear viscosities in multicomponent 2D electron system
Composite Fermion Mass