Research paper
Experimental CharacterizationTheoreticalElectrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Shuai Zhang, Yang Xu, Junhe Zhang, Dihao Sun et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Count | hBN tunneling barrier thickness | 3 | — | |||
| Layer Count | hBN tunneling barrier thickness | 5 | — | |||
| Twist Angle | graphene interlayer twist angle | ~1°deg | — | |||
| Substrate Thickness | oxide thickness | 285nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Count | hBN tunneling barrier thickness | 3 | — | |||
| Layer Count | hBN tunneling barrier thickness | 5 | — | |||
| Twist Angle | graphene interlayer twist angle | ~1°deg | — | |||
| Substrate Thickness | oxide thickness | 285nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Count | hBN tunneling barrier thickness | 3 | — | |||
| Layer Count | hBN tunneling barrier thickness | 5 | — | |||
| Twist Angle | graphene interlayer twist angle | ~1°deg | — | |||
| Substrate Thickness | oxide thickness | 285nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Count | hBN tunneling barrier thickness | 3 | — | |||
| Layer Count | hBN tunneling barrier thickness | 5 | — | |||
| Twist Angle | graphene interlayer twist angle | ~1°deg | — | |||
| Substrate Thickness | oxide thickness | 285nm | — |