Research paper
Experimental CharacterizationTheoretical| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | carrier mobility | 10000cm²/Vs | — | |||
| Fet Carrier Concentration | n-doping beneath FGT contacts | 4500000000000cm⁻² | — | |||
| Fet Threshold Voltage | critical magnetic field for in-plane spin flop | 800mT | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | carrier mobility | 10000cm²/Vs | — | |||
| Fet Carrier Concentration | n-doping beneath FGT contacts | 4500000000000cm⁻² | — | |||
| Fet Threshold Voltage | critical magnetic field for in-plane spin flop | 800mT | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | carrier mobility | 10000cm²/Vs | — | |||
| Fet Carrier Concentration | n-doping beneath FGT contacts | 4500000000000cm⁻² | — | |||
| Fet Threshold Voltage | critical magnetic field for in-plane spin flop | 800mT | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | carrier mobility | 10000cm²/Vs | — | |||
| Fet Carrier Concentration | n-doping beneath FGT contacts | 4500000000000cm⁻² | — | |||
| Fet Threshold Voltage | critical magnetic field for in-plane spin flop | 800mT | — |