Abstract

We report bias voltage-controlled inversions of tunneling magnetoresistance in magnetic tunnel junctions composed of Fe₃GaTe₂ electrodes and an hBN tunneling barrier, observed at room temperature. The TMR polarity reversal occurs consistently at around 0.625 V across multiple devices and temperatures. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states at high energy levels and adjusted the DOS weighting at different k-points to account for electrode crystal misalignment, improving agreement between experiment and theory.

Abstract

We report bias voltage-controlled inversions of tunneling magnetoresistance in magnetic tunnel junctions composed of Fe₃GaTe₂ electrodes and an hBN tunneling barrier, observed at room temperature. The TMR polarity reversal occurs consistently at around 0.625 V across multiple devices and temperatures. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states at high energy levels and adjusted the DOS weighting at different k-points to account for electrode crystal misalignment, improving agreement between experiment and theory.

Abstract

We report bias voltage-controlled inversions of tunneling magnetoresistance in magnetic tunnel junctions composed of Fe₃GaTe₂ electrodes and an hBN tunneling barrier, observed at room temperature. The TMR polarity reversal occurs consistently at around 0.625 V across multiple devices and temperatures. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states at high energy levels and adjusted the DOS weighting at different k-points to account for electrode crystal misalignment, improving agreement between experiment and theory.

Abstract

We report bias voltage-controlled inversions of tunneling magnetoresistance in magnetic tunnel junctions composed of Fe₃GaTe₂ electrodes and an hBN tunneling barrier, observed at room temperature. The TMR polarity reversal occurs consistently at around 0.625 V across multiple devices and temperatures. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states at high energy levels and adjusted the DOS weighting at different k-points to account for electrode crystal misalignment, improving agreement between experiment and theory.