Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations3 characterizations10 properties2 figures
4 preparations3 characterizations10 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ oxide thickness | 300nm | — | |||
| Crystal Thickness | hBN gate dielectric thickness | 29nm | — | |||
| Crystal Thickness | hBN gate dielectric thickness | 13nm | — | |||
| Capacitance | gate capacitance | 0.11uF/cm² | — | |||
| Capacitance | gate capacitance | 0.24uF/cm² | — | |||
| Wavelength | SAW wavelength | 20um | — | |||
| Aperture Width | IDT aperture width | 230um | — | |||
| Contact Spacing | source-drain spacing | 20um | — | |||
| Frequency | SAW drive frequency | 170MHz | — | |||
| Metallization Thickness | Cr/Au for IDT | 5/25nm | — | |||
| Metallization Thickness | Cr/Pd for source/drain contacts | 2.5/15nm | — | |||
| Metallization Thickness | Cr/Au for graphite top gate | 2.5/45nm | — |
Related documents with shared materials, methods, properties, or citations.
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Surface acoustic wave enabled all-optical determination of the interlayer elastic constants of van der Waals interface
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
Dynamic twisting and imaging of moiré crystals
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Thermal transport mapping in twisted double bilayer graphene
Spin injection and detection in all-van der Waals 2D devices
Mapping the twist angle dependence of quasi-Brillouin zones in doubly aligned graphene/BN heterostructures
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Bias Voltage Controlled Inversions of Tunneling Magnetoresistance in van der Waals Heterostructures Fe3GaTe2/hBN/Fe3GaTe2
Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies
Actuation and mapping of SAW-induced high-frequency wavefields on suspended graphene membranes
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations3 characterizations10 properties2 figures
4 preparations3 characterizations10 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ oxide thickness | 300nm | — | |||
| Crystal Thickness | hBN gate dielectric thickness | 29nm | — | |||
| Crystal Thickness | hBN gate dielectric thickness | 13nm | — | |||
| Capacitance | gate capacitance | 0.11uF/cm² | — | |||
| Capacitance | gate capacitance | 0.24uF/cm² | — | |||
| Wavelength | SAW wavelength | 20um | — | |||
| Aperture Width | IDT aperture width | 230um | — | |||
| Contact Spacing | source-drain spacing | 20um | — | |||
| Frequency | SAW drive frequency | 170MHz | — | |||
| Metallization Thickness | Cr/Au for IDT | 5/25nm | — | |||
| Metallization Thickness | Cr/Pd for source/drain contacts | 2.5/15nm | — | |||
| Metallization Thickness | Cr/Au for graphite top gate | 2.5/45nm | — |
Related documents with shared materials, methods, properties, or citations.
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Surface acoustic wave enabled all-optical determination of the interlayer elastic constants of van der Waals interface
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
Dynamic twisting and imaging of moiré crystals
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Thermal transport mapping in twisted double bilayer graphene
Spin injection and detection in all-van der Waals 2D devices
Mapping the twist angle dependence of quasi-Brillouin zones in doubly aligned graphene/BN heterostructures
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Bias Voltage Controlled Inversions of Tunneling Magnetoresistance in van der Waals Heterostructures Fe3GaTe2/hBN/Fe3GaTe2
Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies
Actuation and mapping of SAW-induced high-frequency wavefields on suspended graphene membranes
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations3 characterizations10 properties2 figures
4 preparations3 characterizations10 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ oxide thickness | 300nm | — | |||
| Crystal Thickness | hBN gate dielectric thickness | 29nm | — | |||
| Crystal Thickness | hBN gate dielectric thickness | 13nm | — | |||
| Capacitance | gate capacitance | 0.11uF/cm² | — | |||
| Capacitance | gate capacitance | 0.24uF/cm² | — | |||
| Wavelength | SAW wavelength | 20um | — | |||
| Aperture Width | IDT aperture width | 230um | — | |||
| Contact Spacing | source-drain spacing | 20um | — | |||
| Frequency | SAW drive frequency | 170MHz | — | |||
| Metallization Thickness | Cr/Au for IDT | 5/25nm | — | |||
| Metallization Thickness | Cr/Pd for source/drain contacts | 2.5/15nm | — | |||
| Metallization Thickness | Cr/Au for graphite top gate | 2.5/45nm | — |
Related documents with shared materials, methods, properties, or citations.
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Surface acoustic wave enabled all-optical determination of the interlayer elastic constants of van der Waals interface
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
Dynamic twisting and imaging of moiré crystals
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Thermal transport mapping in twisted double bilayer graphene
Spin injection and detection in all-van der Waals 2D devices
Mapping the twist angle dependence of quasi-Brillouin zones in doubly aligned graphene/BN heterostructures
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Bias Voltage Controlled Inversions of Tunneling Magnetoresistance in van der Waals Heterostructures Fe3GaTe2/hBN/Fe3GaTe2
Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies
Actuation and mapping of SAW-induced high-frequency wavefields on suspended graphene membranes
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations3 characterizations10 properties2 figures
4 preparations3 characterizations10 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ oxide thickness | 300nm | — | |||
| Crystal Thickness | hBN gate dielectric thickness | 29nm | — | |||
| Crystal Thickness | hBN gate dielectric thickness | 13nm | — | |||
| Capacitance | gate capacitance | 0.11uF/cm² | — | |||
| Capacitance | gate capacitance | 0.24uF/cm² | — | |||
| Wavelength | SAW wavelength | 20um | — | |||
| Aperture Width | IDT aperture width | 230um | — | |||
| Contact Spacing | source-drain spacing | 20um | — | |||
| Frequency | SAW drive frequency | 170MHz | — | |||
| Metallization Thickness | Cr/Au for IDT | 5/25nm | — | |||
| Metallization Thickness | Cr/Pd for source/drain contacts | 2.5/15nm | — | |||
| Metallization Thickness | Cr/Au for graphite top gate | 2.5/45nm | — |
Related documents with shared materials, methods, properties, or citations.
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Surface acoustic wave enabled all-optical determination of the interlayer elastic constants of van der Waals interface
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
Dynamic twisting and imaging of moiré crystals
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Thermal transport mapping in twisted double bilayer graphene
Spin injection and detection in all-van der Waals 2D devices
Mapping the twist angle dependence of quasi-Brillouin zones in doubly aligned graphene/BN heterostructures
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Bias Voltage Controlled Inversions of Tunneling Magnetoresistance in van der Waals Heterostructures Fe3GaTe2/hBN/Fe3GaTe2
Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies
Actuation and mapping of SAW-induced high-frequency wavefields on suspended graphene membranes
