Research paper
Experimental CharacterizationComputational MultiscaleEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations5 properties2 figures
5 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Thickness | graphene thickness | 4nm | — | |||
| Feature Diameter | pore diameter | 360nm | — | |||
| Feature Width | neck width | 160nm | — | |||
| Channel Width | channel width | 5um | — | |||
| Channel Length | GN part length | 2um | — | |||
| Channel Length | GNNM part length | 4.8um | — | |||
| Feature Width | nanowire width | 350nm | — | |||
| Thickness | Al mask thickness | 8nm | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations5 properties2 figures
5 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Thickness | graphene thickness | 4nm | — | |||
| Feature Diameter | pore diameter | 360nm | — | |||
| Feature Width | neck width | 160nm | — | |||
| Channel Width | channel width | 5um | — | |||
| Channel Length | GN part length | 2um | — | |||
| Channel Length | GNNM part length | 4.8um | — | |||
| Feature Width | nanowire width | 350nm | — | |||
| Thickness | Al mask thickness | 8nm | — |
Related documents with shared materials, methods, properties, or citations.
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moiré superlattice of transition metal dichalcogenides
Electronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETs
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Toward single-photon detection with superconducting niobium diselenide nanowires
Nonlinear Valley and Spin Valves in Bilayer Graphene
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Graphene Straintronics by Molecular Trapping
Metastable states of 2D-material-on-metal-islands structures revealed by thermal cycling
High-harmonic generation enhancement with graphene heterostructures
Actuation and mapping of SAW-induced high-frequency wavefields on suspended graphene membranes
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations5 properties2 figures
5 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Thickness | graphene thickness | 4nm | — | |||
| Feature Diameter | pore diameter | 360nm | — | |||
| Feature Width | neck width | 160nm | — | |||
| Channel Width | channel width | 5um | — | |||
| Channel Length | GN part length | 2um | — | |||
| Channel Length | GNNM part length | 4.8um | — | |||
| Feature Width | nanowire width | 350nm | — | |||
| Thickness | Al mask thickness | 8nm | — |
Related documents with shared materials, methods, properties, or citations.
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moiré superlattice of transition metal dichalcogenides
Electronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETs
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Toward single-photon detection with superconducting niobium diselenide nanowires
Nonlinear Valley and Spin Valves in Bilayer Graphene
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Graphene Straintronics by Molecular Trapping
Metastable states of 2D-material-on-metal-islands structures revealed by thermal cycling
High-harmonic generation enhancement with graphene heterostructures
Actuation and mapping of SAW-induced high-frequency wavefields on suspended graphene membranes
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations5 properties2 figures
5 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Thickness | graphene thickness | 4nm | — | |||
| Feature Diameter | pore diameter | 360nm | — | |||
| Feature Width | neck width | 160nm | — | |||
| Channel Width | channel width | 5um | — | |||
| Channel Length | GN part length | 2um | — | |||
| Channel Length | GNNM part length | 4.8um | — | |||
| Feature Width | nanowire width | 350nm | — | |||
| Thickness | Al mask thickness | 8nm | — |
Related documents with shared materials, methods, properties, or citations.
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moiré superlattice of transition metal dichalcogenides
Electronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETs
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Toward single-photon detection with superconducting niobium diselenide nanowires
Nonlinear Valley and Spin Valves in Bilayer Graphene
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Graphene Straintronics by Molecular Trapping
Metastable states of 2D-material-on-metal-islands structures revealed by thermal cycling
High-harmonic generation enhancement with graphene heterostructures
Actuation and mapping of SAW-induced high-frequency wavefields on suspended graphene membranes
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